Al-based alloy sputtering target and Cu-based alloy sputtering target

Patent metadata

Field	Value
Publication number	US-9551065-B2
Application number	US-201113981414-A
Country	US
Kind code	B2
Filing date	Dec 20, 2011
Priority date	Feb 4, 2011
Publication date	Jan 24, 2017
Grant date	Jan 24, 2017

Abstract

Film-formation rate can be increased in the pre-sputtering and in the subsequent sputtering onto a substrate or the like, and sputtering failures such as splashes can be inhibited, by making an Al-based alloy or Cu-based alloy spurting target fulfill the following requirements (1) and/or (2) when the total area ratio of crystal orientations <001>±15°, <011>±15°, <111>±15°, <112>±15°, and <012>±15° in the sputtering surface normal direction in the depth within 1 mm from the uppermost surface of the sputtering target is referred to as a P value: (1) the area ratio PA of <011>±15° to the P value: 40% or lower; and (2) the total area ratio PB of <001>±15° and <111>±15° to the P value: 20% or higher.

First claim

The invention claimed is:

1. A sputtering target, comprising an Al-based alloy or a Cu-based alloy, wherein the Al-based alloy or Cu-based alloy sputtering target satisfies a requirement (1), a requirement (2), or both requirements (1) and (2), when crystal orientations <001>, <011>, <111>, <112>, and <012> in a sputtering surface normal direction, in a depth within 1 mm from an uppermost surface, of the sputtering target are observed by an electron backscatter diffraction pattern method, and a total area ratio <001>±15°, <011>±15°, <111>±15°, <112>±15°, and <012>±15° is referred to as a P value:
(1) an area ratio PA of <011>±15° to the P value is 40% or lower;
(2) a total area ratio PB of <001>±15° and <111>±15° to the P value 20% or higher.

2. The sputtering target according to claim 1 , wherein the Al-based alloy or Cu-based alloy sputtering target satisfies a requirement (3), a requirement (4), or both requirements (3) and (4), when crystal orientations <001>, <011>, <111>, <112>, and <012>in the sputtering surface normal direction, in a depth of a (¼)×t (thickness) portion from the uppermost surface, of the sputtering target are observed by the electron backscatter diffraction pattern method, and a total area ratio of <001>±15°, <011>±15°, <111>±15°, <112>±15°, and <012>±15° is referred to as a Q value:
(3) a ratio of the area ratio PA of <011>±15° in the depth within 1 mm from the uppermost surface to an area ratio QA of <011>±15° in the depth of the (¼)×t portion to the Q value satisfies: 0.8 ≧PA/QA;
(4) a ratio of the total area ratio PB of <001>±15° and <111>±15° in the depth within 1 mm from the uppermost surface to a total area ratio QB of <001>±15° and <111>±15° in the depth of the (¼)×t portion to the Q value satisfies: 1.2 <PB/QB.

3. The sputtering target according to claim 1 , wherein the sputtering target comprises an Al-based alloy comprising:
0.0001 to 1.0 mass % of Fe; and
0.0001 to 1.0 mass % of Si.

4. The sputtering target according to claim 3 , wherein the Al-based alloy further comprises:
0.0001 to 0.5 mass % of at least one selected from the group consisting of Mn, Cr, Mo, Nb, Ti, and Ta.

5. The sputtering target according to claim 1 , wherein the sputtering target comprises a Cu-based alloy comprising:
0.00001 to 0.04 mass % of oxygen;
0.00001 to 0.003 mass % of hydrogen; and
0.01 mass % or lower of unavoidable impurities.

6. The sputtering target according to claim 2 , wherein the sputtering target comprises an Al-based alloy comprising:
0.0001 to 1.0 mass % of Fe; and
0.0001 to 1.0 mass % of Si.

7. The sputtering target according to claim 6 , wherein the Al-based alloy further comprises:
0.0001 to 0.5 mass % of at least one selected from the group consisting of Mn, Cr, Mo, Nb, Ti, and Ta.

8. The sputtering target according to claim 2 , wherein the sputtering target comprises a Cu-based alloy comprising:
0.00001 to 0.04 mass % of oxygen;
0.00001 to 0.003 mass % of hydrogen; and
0.01 mass % or lower of unavoidable impurities.

Assignees

• Matsumoto Katsushi
• Nakai Junichi
• Takagi Toshiaki
• Kobe Steel Ltd
• Kobelco Res Inst Inc

Inventors

• Matsumoto Katsushi
• Nakai Junichi
• Takagi Toshiaki

Classifications

• H10P14/42

  using a gas or vapour · CPC title

• H10D64/011

  of electrodes ohmically coupled to a semiconductor · CPC title

• C22C1/02 Primary

  by melting {(C22C1/1036 takes precedence)} · CPC title

• C22C9/00

  Alloys based on copper · CPC title

• C23C14/3414

  Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title