Organic photoelectronic device and image sensor

Patent metadata

Field	Value
Publication number	US-9548463-B2
Application number	US-201414587394-A
Country	US
Kind code	B2
Filing date	Dec 31, 2014
Priority date	Jul 21, 2014
Publication date	Jan 17, 2017
Grant date	Jan 17, 2017

Abstract

Example embodiments relate to an organic photoelectronic device including a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, wherein the active layer includes a first compound represented by the following Chemical Formula 1, and an image sensor including the organic photoelectronic device.

First claim

What is claimed is:

1. An organic photoelectronic device comprising:
a first electrode and a second electrode facing each other, and
an active layer between the first electrode and the second electrode,
wherein the active layer includes a first compound represented by the following Chemical Formula 1:

wherein
R 1 to R 12 are independently hydrogen or a monovalent organic group,
R 1 to R 12 are independently present or form a ring,
L 1 to L 3 are independently a single bond or a divalent organic group, and
R 13 to R 15 are independently a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted amine group, a substituted or unsubstituted C6 to C30 arylamine group, a substituted or unsubstituted silyl group, or a combination thereof.

2. The organic photoelectronic device of claim 1 , wherein R 1 to R 12 are independently hydrogen, a substituted or unsubstituted C1 to C30 aliphatic hydrocarbon group, a substituted or unsubstituted C6 to C30 aromatic hydrocarbon group, a substituted or unsubstituted C1 to C30 aliphatic heterocyclic group, a substituted or unsubstituted C2 to C30 aromatic heterocyclic group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C1 to C30 aryloxy group, a thio group, an alkylthio group, an arylthio group, a cyano group, a cyano-containing group, a halogen, a halogen-containing group, a substituted or unsubstituted sulfonyl group, a substituted or unsubstituted aminosulfonyl group, a substituted or unsubstituted arylsulfonyl group, or a combination thereof, and
L 1 to L 3 are independently a single bond, a substituted or unsubstituted C1 to C30 alkylene group, a substituted or unsubstituted C6 to C30 arylene group, a divalent substituted or unsubstituted C3 to C30 heterocyclic group, or a combination thereof.

3. The organic photoelectronic device of claim 1 , wherein the first compound is configured to selectively absorb light in a green wavelength region.

4. The organic photoelectronic device of claim 1 , wherein the first compound has a maximum absorption wavelength (λ max ) of about 500 nm to about 600 nm.

5. The organic photoelectronic device of claim 1 , wherein the active layer further comprises a second compound configured to absorb light in a visible wavelength region.

6. The organic photoelectronic device of claim 5 , wherein the second compound comprises fullerene or a fullerene derivative.

7. The organic photoelectronic device of claim 5 , wherein the second compound comprises thiophene or a thiophene derivative.

8. The organic photoelectronic device of claim 1 , wherein a light absorption curve of the active layer has a full width at half maximum (FWHM) of less than or equal to about 80 nm.

9. The organic photoelectronic device of claim 1 , wherein at least one of the first electrode and the second electrode are a transparent electrode.

10. An image sensor comprising the organic photoelectronic device of claim 1 .

11. The image sensor of claim 10 , comprising a semiconductor substrate integrated with a plurality of first photo-sensing devices configured to sense light in a blue wavelength region and a plurality of second photo-sensing devices configured to sense light in a red wavelength region, wherein the organic photoelectronic device is on the semiconductor substrate and is configured to selectively absorb light in a green wavelength region.

12. The image sensor of claim 11 , wherein the first photo-sensing devices and the second photo-sensing devices are stacked in a substantially perpendicular direction to the semiconductor substrate.

13. The image sensor of claim 11 , further comprising:
a color filter layer between the semiconductor substrate and the organic photoelectronic device,
a blue filter configured to selectively absorb light in a blue wavelength region, and
a red filter configured to selectively absorb light in a red wavelength region.

14. The image sensor of claim 10 , further comprising:
a green photoelectronic device of the organic photoelectronic device,
a blue photoelectronic device configured to selectively absorb light in a blue wavelength region, and
a red photoelectronic device configured to selectively absorb light in a red wavelength region, the blue photoelectronic device and the red photoelectronic device being stacked on each other.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Yagi Tadao
• Sakurai Rie
• Park Kyung-Bae
• Yun Sung Young
• Lee Gae Hwang
• Lee Kwang Hee
• Leem Dong-Seok
• Bulliard Xavier
• Heo Chul Joon
• Jin Yong Wan

Classifications

• H10K30/40

  comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers · CPC title

• H10K85/40

  Organosilicon compounds, e.g. TIPS pentacene · CPC title

• H10F39/12

  Image sensors · CPC title

• C07F7/0834 Primary

  Compounds having one or more O-Si linkage (for compounds with C-O-Si linkages see C07F7/18) · CPC title

• H01L51/442

  Electricity · mapped topic