Light emitting diode

Patent metadata

Field	Value
Publication number	US-9548455-B2
Application number	US-201514983613-A
Country	US
Kind code	B2
Filing date	Dec 30, 2015
Priority date	Dec 31, 2014
Publication date	Jan 17, 2017
Grant date	Jan 17, 2017

Abstract

A light emitting diode includes an insulating substrate, a first MgO layer, a semiconductor carbon nanotube layer, a second MgO layer, a functional dielectric layer, a first electrode, and a second electrode. The semiconductor carbon nanotube layer has a first surface and a second surface. The first MgO layer coats entire the first surface. The second surface is divided into a first region and a second region. The first region is coated with the second MgO layer. The second MgO layer is covered by the functional dielectric layer. The second region is exposed. The first electrode is electrically connected to the first region. The second electrode is electrically connected to the second region.

First claim

What is claimed is:

1. A light emitting diode, comprising:
an insulating substrate;
a semiconductor carbon nanotube layer on the insulating substrate; wherein the semiconductor carbon nanotube layer comprises a first surface and a second surface, the first surface is attached to the insulating substrate, and the second surface defines a first region and a second region;
an MgO layer on the first region;
a functional dielectric layer on the MgO layer, wherein the second region is exposed;
a first electrode electrically connected to the first region; and
a second electrode electrically connected to the second region.

2. The light emitting diode of claim 1 , wherein the MgO layer is in direct contact with the first region and covers the first region.

3. The light emitting diode of claim 1 , wherein a thickness of the MgO layer range from about 1 nanometer to about 15 nanometers.

4. The light emitting diode of claim 1 , wherein the semiconductor carbon nanotube layer comprises a plurality of carbon nanotubes.

5. The light emitting diode of claim 1 , wherein the semiconductor carbon nanotube layer comprises a plurality of semi-conductive carbon nanotubes connected with each other to form a conductive network.

6. The light emitting diode of claim 5 , wherein a percentage of the plurality of semi-conductive carbon nanotubes in the semiconductor carbon nanotube layer is greater than or equal to 66.7%.

7. The light emitting diode of claim 1 , wherein the semiconductor carbon nanotube layer consists of a plurality of semi-conductive carbon nanotubes.

8. The light emitting diode of claim 1 , wherein a thickness of the semiconductor carbon nanotube layer ranges from about 0.5 nanometers to about 2 nanometers.

9. The light emitting diode of claim 1 , wherein the functional dielectric layer is in direct contact with the MgO layer and entirely covers the MgO layer.

10. The light emitting diode of claim 1 , where in the MgO layer is sandwiched between the semiconductor carbon nanotube layer and the functional dielectric layer.

11. The light emitting diode of claim 1 , wherein a material of the functional dielectric layer is selected from the group consisting of aluminum oxide, hafnium oxide, and yttrium oxide.

12. The light emitting diode of claim 1 , wherein a thickness of the functional dielectric layer ranges from about 20 nanometers to about 40 nanometers.

13. The light emitting diode of claim 1 , wherein the semiconductor carbon nanotube layer is a free-standing structure.

14. The light emitting diode of claim 1 , wherein the first region and the second region are defined at the second surface between the first electrode and the second electrode.

Assignees

• Univ Tsinghua
• Hon Hai Prec Ind Co Ltd

Inventors

• Li Guan-Hong
• Li Qun-Qing
• Jin Yuan-Hao
• Fan Shou-Shan

Classifications

• H01L2251/303

  Electricity · mapped topic

• H01L29/0673

  Electricity · mapped topic

• H01L2924/12041

  Electricity · mapped topic

• H01L29/7869

  Electricity · mapped topic

• H01L51/5092

  Electricity · mapped topic