Acoustic resonator comprising acoustic redistribution layers

Patent metadata

Field	Value
Publication number	US-9548438-B2
Application number	US-201414231325-A
Country	US
Kind code	B2
Filing date	Mar 31, 2014
Priority date	Mar 31, 2014
Publication date	Jan 17, 2017
Grant date	Jan 17, 2017

Abstract

An acoustic resonator structure comprises a piezoelectric layer having a first surface and a second surface, a first electrode disposed adjacent to the first surface, and a second electrode disposed adjacent to the second surface. The first electrode comprises a first conductive layer disposed adjacent to the piezoelectric layer and having a first acoustic impedance, and a second conductive layer disposed on a side of the first conductive layer opposite the piezoelectric layer and having a second acoustic impedance greater than the first acoustic impedance. The second electrode may be disposed between a substrate and the piezoelectric layer, and it may comprise a third conductive layer disposed adjacent to the piezoelectric layer and having a third acoustic impedance, and a fourth conductive layer disposed on a side of the third conductive layer opposite the piezoelectric layer and having a fourth acoustic impedance greater than the third acoustic impedance.

First claim

The invention claimed is:

1. An acoustic resonator structure, comprising:
a piezoelectric layer having a first surface and a second surface;
a first electrode disposed adjacent to the first surface, the first electrode comprising: a first conductive layer disposed adjacent to the piezoelectric layer and having a first acoustic impedance, and a second conductive layer disposed on a side of the first conductive layer opposite the piezoelectric layer and having a second acoustic impedance greater than the first acoustic impedance; and
a second electrode disposed adjacent to the second surface, the second electrode comprising: a third conductive layer disposed adjacent to the piezoelectric layer and having a third acoustic impedance, and a fourth conductive layer disposed on a side of the third conductive layer opposite the piezoelectric layer and having a fourth acoustic impedance greater than the third acoustic impedance;
wherein the first and third conductive layers are formed of a first material, and the second and fourth conductive layers are formed of a second material.

2. The acoustic resonator structure of claim 1 , further comprising a substrate, wherein the first electrode is disposed between the substrate and the piezoelectric layer.

3. The acoustic resonator structure of claim 1 , further comprising a substrate, wherein the second electrode is disposed between the substrate and the piezoelectric layer.

4. The acoustic resonator structure of claim 1 , wherein the first electrode, the piezoelectric layer, and the second electrode form an acoustic stack of a film bulk acoustic resonator (FBAR).

5. The acoustic resonator structure of claim 1 , wherein the first material is molybdenum and the second material is tungsten.

6. The acoustic resonator structure of claim 1 , wherein the first conductive layer is formed of molybdenum and the second conductive layer is formed of tungsten.

7. The acoustic resonator structure of claim 1 , wherein the first conductive layer is formed of niobium, molybdenum, or an alloy of niobium and molybdenum, and the second conductive layer is formed of tungsten or iridium.

8. The acoustic resonator structure of claim 7 , wherein the second electrode is formed of tungsten, iridium, or molybdenum.

9. The acoustic resonator structure of claim 8 , further comprising a substrate, wherein the first electrode is disposed between the substrate and the piezoelectric layer.

10. The acoustic resonator structure of claim 1 , wherein the piezoelectric layer comprises aluminum scandium nitride having a scandium concentration of about 1-10%.

11. The acoustic resonator structure of claim 1 , further comprising a passivation layer disposed on a side of one of the first and second electrodes opposite the piezoelectric layer, and a seed layer disposed on a side of the other of the first and second electrodes opposite the piezoelectric layer.

12. The acoustic resonator structure of claim 1 , wherein the first electrode further comprises a third conductive layer disposed on a side of the second conductive layer opposite the first conductive layer.

13. The acoustic resonator structure of claim 12 , wherein the third conductive layer has a third acoustic impedance greater than the second acoustic impedance.

14. The acoustic resonator structure of claim 12 , wherein the first conductive layer comprises niobium or an alloy of niobium and molybdenum, the second conductive layer comprises molybdenum, and the third conductive layer comprises tungsten.

15. The acoustic resonator structure of claim 12 , wherein the third conductive layer has a third acoustic impedance lower than the second acoustic impedance.

16. The acoustic resonator structure of claim 12 , wherein the first conductive layer comprises niobium or an alloy of niobium and molybdenum, the second conductive layer comprises tungsten, and the third conductive layer comprises molybdenum.

17. The acoustic resonator structure as claimed in claim 1 , wherein the piezoelectric layer comprises Al i-x Sc x N.

18. The acoustic resonator structure of claim 11 , wherein the passivation layer and the seed layer each comprise one of aluminum nitride, silicon carbide, silicon nitride, aluminum oxide and boron-doped silicon oxide.

19. An acoustic resonator structure, comprising:
a piezoelectric layer having a first surface and a second surface;
a first electrode disposed adjacent to the first surface;
a second electrode disposed adjacent to the second surface;
a passivation layer disposed on a side of one of the first and second electrodes opposite the piezoelectric layer; and
a seed layer disposed on a side of the other of the first and second electrodes opposite the piezoelectric layer, wherein the first electrode comprises a first conductive layer disposed adjacent to the piezoelectric layer and having a first acoustic impedance, and a second conductive layer disposed on a side of the first conductive layer opposite the piezoelectric layer and having a second acoustic impedance greater than the first acoustic impedance.

20. The acoustic resonator structure of claim 19 , wherein the passivation layer and the seed layer each comprise one of aluminum nitride, silicon carbide, silicon nitride, aluminum oxide and boron-doped silicon oxide.

21. The acoustic resonator structure of claim 19 , further comprising a substrate, wherein the first electrode is disposed between the substrate and the piezoelectric layer.

22. The acoustic resonator structure of claim 19 , further comprising a substrate, wherein the second electrode is disposed between the substrate and the piezoelectric layer.

23. The acoustic resonator structure of claim 19 , wherein the first electrode, the piezoelectric layer, and the second electrode form an acoustic stack of a film bulk acoustic resonator (FBAR).

24. The acoustic resonator structure of claim 19 , wherein the first conductive layer is formed of molybdenum and the second conductive layer is formed of tungsten.

25. The acoustic resonator structure of claim 19 , wherein the first conductive layer is formed of niobium, molybdenum, or an alloy of niobium and molybdenum, and the second conductive layer is formed of tungsten or iridium.

26. The acoustic resonator structure of claim 25 , wherein second electrode comprises a third conductive layer disposed adjacent to the piezoelectric layer and having a third acoustic impedance, and a fourth conductive layer disposed on a side of the third conductive layer opposite the piezoelectric layer and having a fourth acoustic impedance greater than the third acoustic impedance.

27. The acoustic resonator structure of claim 25 , wherein the second electrode is formed of tungsten, iridium, or molybdenum.

28. The acoustic resonator structure of claim 27 , further comprising a substrate, wherein the first electrode is disposed between the substrate and the piezoelectric layer.

29. The acoustic resonator structure of claim 19 , wherein the piezoelectric layer comprises aluminum scandium nitride having a scandium concentration of about 1-10%.

30. The acoustic resonator structure of claim 19 , wherein the first electrode further comprises a third conductive layer disposed on a side of the second conductive layer opposite the first conductive layer.

31. The acoustic resonator structure of claim 30 , w

Assignees

• Avago Technologies General Ip

Inventors

• Burak Dariusz
• Bader Stefan
• Shirakawa Alexandre
• Grannen Kevin J

Classifications

• H03H9/02086

  Means for compensation or elimination of undesirable effects · CPC title

• H03H9/132

  characterized by a particular shape · CPC title

• H01L41/0477 Primary

  Electricity · mapped topic

• H03H9/171 Primary

  implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type · CPC title

• H03H9/584

  Coupled Resonator Filters [CFR] · CPC title