Semiconductor light-emitting device

Patent metadata

Field	Value
Publication number	US-9548426-B2
Application number	US-201514720698-A
Country	US
Kind code	B2
Filing date	May 22, 2015
Priority date	Sep 19, 2014
Publication date	Jan 17, 2017
Grant date	Jan 17, 2017

Abstract

A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a selective transmission-reflection layer disposed on the light-emitting structure and including a plurality of dielectric layers having different optical thicknesses alternately stacked at least once. The sum of an optical thickness of a dielectric layer having a maximum optical thickness and an optical thickness of a dielectric layer having a minimum optical thickness is in the range of 0.75 to 0.80.

First claim

What is claimed is:

1. A semiconductor light-emitting device, comprising:
a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; and
a selective transmission-reflection layer including a plurality of dielectric layers having different optical thicknesses alternately stacked at least once on the light-emitting structure,
wherein a sum of an optical thickness of a dielectric layer having a maximum optical thickness and an optical thickness of a dielectric layer having a minimum optical thickness is in the range of 0.75 to 0.80, in which the optical thickness is defined by a formula, (nd)/λ, where n is a refractive index of a respective dielectric layer, d is a thickness of the respective dielectric layer, and λ is a peak wavelength of light emitted by the light-emitting structure, and
wherein the selective transmission-reflection layer includes a first dielectric layer, a second dielectric layer, and a third dielectric layer, and an optical thickness of the first dielectric layer is greater than an optical thickness of the second dielectric layer, and the optical thickness of the second dielectric layer is greater than an optical thickness of the third dielectric layer.

2. The semiconductor light-emitting device of claim 1 , wherein the optical thickness of the first optical thickness is in the range of 0.5 to 0.65, and the optical thickness of the third dielectric layer is in the range of 0.1 to 0.35.

3. The semiconductor light-emitting device of claim 1 , wherein the first and third dielectric layers do not directly contact each other.

4. The semiconductor light-emitting device claim 1 , further comprising a first electrode and a second electrode disposed below the light-emitting structure.

5. The semiconductor light-emitting device of claim 1 , further comprising a first electrode and a second electrode disposed on the light-emitting structure.

6. The semiconductor light-emitting device of claim 1 , further comprising a first electrode disposed below the light-emitting structure, and a second electrode disposed on the light-emitting structure.

7. The semiconductor light-emitting device of claim 1 , further comprising a reflective layer,
wherein the light-emitting structure is interposed between the reflective layer and the selective transmission-reflection layer.

8. The semiconductor light-emitting device of claim 1 , further comprising a transparent electrode layer disposed on the second conductivity-type semiconductor layer.

9. The semiconductor light-emitting device of claim 1 , wherein the selective transmission-reflection layer transmits blue-green light and reflects red light.

10. The semiconductor light-emitting device of claim 1 , wherein the number of the plurality of dielectric layers is 15 or more.

11. The semiconductor light-emitting device of claim 1 , wherein the plurality of dielectric layers are selected from the group consisting of SiO 2 , TiO 2 , Ta 2 O 5 , MgF 2 , CeO 2 , Al 2 O 3 , ZrO 2 , MgO, SnO 2 , ZnO, B 2 O 3 , Li 2 O, SrO, HfO 2 , and BaO.

12. The semiconductor light-emitting device of claim 1 , further comprising a phosphor layer disposed on the selective transmission-reflection layer.

13. A semiconductor light-emitting device, comprising:
a light-emitting structure including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer;
a selective transmission-reflection layer disposed on the light-emitting structure and including a first dielectric layer having an optical thickness in the range of 0.5 to 0.65 a second dielectric layer having an optical thickness in the range of 0.1 to 0.35 alternately stacked at least once, and an additional dielectric layer having an optical thickness less than the first optical thickness and greater than the second optical thickness disposed between the first dielectric layer and the second dielectric layer, in which the optical thickness is defined by a formula, (nd)/λ, where n is a refractive index of a respective dielectric layer, d is a thickness of the respective dielectric layer, and λ is a peak wavelength of light emitted by the light-emitting structure; and
a phosphor layer disposed on the selective transmission-reflection layer.

14. A semiconductor light-emitting device, comprising:
a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; and
a selective transmission-reflection layer formed on the light-emitting structure, and including a first group including a plurality of first dielectric layers each having a first optical thickness, a second group including a plurality of second dielectric layers each having a second optical thickness, and a third group including a plurality of third dielectric layers each having a third optical thickness, wherein the first dielectric layers, the second dielectric layers, and the third dielectric layers are sequentially stacked,
wherein the first optical thickness is in the range of 0.5 to 0.65, the third optical thickness is in the range of 0.1 to 0.35, and the second optical thickness is less than the first optical thickness and greater than the third optical thickness, and
wherein the optical thicknesses is defined by a formula, (nd)/λ, where n is a refractive index of a respective dielectric layer, d is a thickness of the respective dielectric layer, and λ is a peak wavelength of light emitted by the light-emitting structure.

15. The semiconductor light-emitting device of claim 14 , further comprising a phosphor layer,
wherein the selective transmission-reflection layer is interposed between the phosphor layer and the light-emitting structure.

16. The semiconductor light-emitting device of claim 14 , wherein the selective transmission-reflection layer transmits blue-green light and reflects red light.

17. The semiconductor light-emitting device of claim 14 , where a sum of the first optical thickness and the third optical thickness is in the range of 0.75 to 0.8.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Myeong Ha
• Lim Chan Mook
• Sofue Masaaki
• Song Sang Yeob
• Yun Mi Jeong

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/07554

  changes in dispositions · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title