High quality factor capacitors and methods for fabricating high quality factor capacitors

Patent metadata

Field	Value
Publication number	US-9548350-B2
Application number	US-201414177072-A
Country	US
Kind code	B2
Filing date	Feb 10, 2014
Priority date	Feb 10, 2014
Publication date	Jan 17, 2017
Grant date	Jan 17, 2017

Abstract

Provided are space-efficient capacitors that have a higher quality factor than conventional designs and improve coupling of electrical energy from a through-glass via (TGV) to a dielectric. For example, provided is a TGV having a non-rectangular cross-section, where one end of the TGV is coupled to a first metal plate. A dielectric material is formed on the first metal plate. A second metal plate is formed on the dielectric material in a manner that overlaps at least a portion of the first metal plate to form at least one overlapped region of the dielectric material. At least a part of the perimeter of the overlapped region is non-planar. The overlapped region can be formed in a shape of a closed ring, in a plurality of portions of a ring shape, in substantially a quarter of a ring shape, and/or in substantially a half of a ring shape.

First claim

What is claimed is:

1. An apparatus, comprising:
a capacitor including:
a through-glass via (TGV) having a non-rectangular cross-section, wherein one end face of the TGV is coupled to a first metal plate;
a dielectric material formed on the first metal plate; and
a second metal plate formed on the dielectric material such that at least a part of the dielectric material is located in at least one overlapped region between both the first metal plate and the second metal plate,
wherein at least a part of a perimeter of the at least one overlapped region is curved, and the dielectric material, the first metal plate, and the second metal plate are formed external to the TGV without extending past a perimeter of the one end face of the TGV.

2. The apparatus of claim 1 , wherein the TGV is substantially cylindrically-shaped and has an axis, and the at least one overlapped region has at least a portion of a ring shape that is substantially centered about the axis of the TGV.

3. The apparatus of claim 2 , wherein the at least one overlapped region is in a shape of a closed ring substantially centered about the axis of the TGV.

4. The apparatus of claim 2 , wherein the at least one overlapped region is in at least one of:
a plurality of portions of the ring shape;
substantially a quarter of the ring shape; or
substantially a half of the ring shape.

5. The apparatus of claim 2 , wherein an inner radius of the ring shape is greater than an outer radius of the cylindrically-shaped TGV.

6. The apparatus of claim 1 , wherein the first metal plate is substantially planar.

7. The apparatus of claim 2 , wherein the at least one overlapped region is substantially in a plane extending from an outer radius of the ring shape.

8. The apparatus of claim 1 , further comprising at least one of a mobile device, a base station, a set top box, a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, or a computer, of which the capacitor is a constituent part.

9. A capacitor comprising:
a first metal plate coupled to an end face of a through-glass via with a non-rectangular perimeter, wherein a portion of the first metal plate extends past the non-rectangular perimeter of the through-glass via;
a half circle shaped dielectric material on the portion of the first metal plate within the non-rectangular perimeter of the through-glass via; and
a second metal plate on the half circle shaped dielectric material opposite the first metal plate, wherein the half circle shaped dielectric material, the first metal plate, and the second metal plate are external to the TGV.

Assignees

• Qualcomm Inc

Inventors

• Yun Changhan Hobie
• Kim Daeik Daniel
• Zuo Chengjie
• Kim Jonghae
• Velez Mario Francisco
• Kidwell Jr Donald William
• Lasiter Jon Bradley
• Lai Kwan-Yu
• Kim Jitae
• Shenoy Ravindra Vaman

Classifications

• H10W70/635

  Through-vias · CPC title

• H10W70/095

  of vias therein · CPC title

• H10W20/496

  Capacitor integral with wiring layers · CPC title

• H10W20/023

  the interconnections being through-semiconductor vias · CPC title

• H10W20/20

  Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] · CPC title