Solid state lights with thermal control elements

Patent metadata

Field	Value
Publication number	US-9548286-B2
Application number	US-85310510-A
Country	US
Kind code	B2
Filing date	Aug 9, 2010
Priority date	Aug 9, 2010
Publication date	Jan 17, 2017
Grant date	Jan 17, 2017

Abstract

A solid state light (“SSL”), a solid state emitter (“SSE”), and methods of manufacturing SSLs and SSEs. In one embodiment, an SSL comprises a packaging substrate having an electrical contact and a light emitting structure having a front side and a back side. The back side of the light emitting structure is superimposed with the electrical contact of the packaging substrate. The SSL can further include a temperature control element aligned with the light emitting structure and the electrical contact of the packaging substrate.

First claim

We claim:

1. A solid state light (“SSL”), comprising:
a packaging substrate having an electrical contact;
a light emitting structure having—
a first semiconductor material and a second semiconductor material with an active region therebetween;
a reflective material proximate the second semiconductor material; and
a temperature control element positioned between the light emitting structure and the electrical contact of the packaging substrate, wherein the temperature control element comprises a positive temperature coefficient (“PTC”) material contacting the reflective material such that the temperature control element is integrated directly with the light emitting structure.

2. The SSL of claim 1 , wherein the temperature control element is surface-mounted to the electrical contact of the packaging substrate.

3. The SSL of claim 2 , wherein the first semiconductor material is an N-type semiconductor material and the second semiconductor material is a P-type semiconductor material.

4. The SSL of claim 3 , wherein:
the N-type semiconductor material is N-type gallium nitride (N-GaN);
the P-type semiconductor material is P-type gallium nitride (P-GaN); and
the active region comprises indium gallium nitride (InGaN).

5. The SSL of claim 1 , wherein the PTC material comprises barium titanate.

6. The SSL of claim 1 , wherein the temperature control element is integrated directly with the light emitting structure.

7. The SSL of claim 1 , wherein a heat sink is attached to the temperature control element.

8. The SSL of claim 1 , further comprising a bypass device electrically coupled to the light emitting structure and the temperature control element.

9. The SSL of claim 8 , wherein the bypass device is coupled in parallel with the light emitting structure and the temperature control element.

10. The SSL of claim 1 , wherein:
the first semiconductor material and a second semiconductor material are configured to generate light; and
the temperature control element is surface-mounted to the electrical contact of the packaging substrate.

11. The SSL of claim 10 , wherein the light emitting structure further comprises a transparent substrate between the second semiconductor material and the reflective material.

12. The SSL of claim 1 , further comprising a separate die between the light emitting structure and the packaging substrate, wherein the temperature control element is formed in and/or on the separate die.

13. A solid state emitter (“SSE”), comprising:
a light emitting structure having at least a P-type semiconductor material, an N-type semiconductor material, and a reflective material adjacent the P-type semiconductor material; and
an integrated temperature control element bonded directly to the reflective material, wherein the temperature control element is configured to increase electrical resistance with increasing temperature; and
wherein the temperature control element comprises a positive temperature coefficient (“PTC”) material.

14. The SSE of claim 13 , wherein:
the temperature control element is vertically aligned directly with the P-type semiconductor material; and
the temperature control element is surface-mounted to the electrical contact of a packaging substrate to which the SSE is mounted.

15. The SSE of claim 13 , further comprising:
a transparent conductive material between the P-type semiconductor material and the reflective material.

Assignees

• Sills Scott E
• Jenkins David R
• Hembree David R
• Micron Technology Inc

Inventors

• Sills Scott E
• Jenkins David R
• Hembree David R

Classifications

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/00 Primary

  Package configurations · CPC title

• H01L25/167

  Electricity · mapped topic