Semiconductor device
US-2015021791-A1 · Jan 22, 2015 · US
US9548283B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9548283-B2 |
| Application number | US-201213542528-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 5, 2012 |
| Priority date | Jul 5, 2012 |
| Publication date | Jan 17, 2017 |
| Grant date | Jan 17, 2017 |
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A package-on-package (PoP) device comprises a bottom package on a substrate and a first set of conductive elements coupling the bottom package and the substrate. The PoP device further comprises a top package over the bottom package and a redistribution layer coupling the top package to the substrate. A method of forming a PoP device comprises coupling a first package to a substrate; and forming a redistribution layer over the first package and a top surface of the substrate. The method further comprises coupling a second package to the redistribution layer, wherein the redistribution layer couples the second package to the substrate.
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What is claimed is: 1. A package-on-package (PoP) device comprising: a bottom package on a substrate; a first conductive contact on the substrate; a first set of conductive elements coupling the bottom package and the substrate; a top package over the bottom package; a first redistribution layer on a top surface and a sidewall of the bottom package, wherein the first redistribution layer couples the top package to the substrate, and wherein the first redistribution layer comprises: a first portion of the first redistribution layer being on the top surface of the bottom package, the first portion of the first redistribution layer having a top surface, a bottom surface opposite the top surface, and sidewalls extending from the top surface to the bottom surface of the first portion, the bottom surface of the first portion being in physical contact with the top surface of the bottom package; a second portion of the first redistribution layer being along the sidewall of the bottom package, the second portion of the first redistribution layer having a sidewall in physical contact with a majority of the sidewall of the bottom package, the sidewall of the second portion of the first redistribution layer being substantially perpendicular to the bottom surface of the first portion of the first redistribution layer; and a third portion of the first redistribution layer being on the first conductive contact on the substrate, the second portion of the first redistribution layer extending from the first to the third portions of the first redistribution layer, the third portion of the first redistribution layer having a top surface, a bottom surface opposite the top surface, and sidewalls extending from the top surface to the bottom surface of the third portion, the bottom surface of the third portion being in physical contact with a top surface of the first conductive contact; a second redistribution layer on the top surface and a sidewall of the bottom package, wherein the second redistribution layer couples the top package to the substrate, and wherein the second redistribution layer comprises a first portion on the top surface of the bottom package, the first portion of the second redistribution layer having a top surface, a bottom surface opposite the top surface, and sidewalls extending from the top surface to the bottom surface of the first portion of the second redistribution layer; an underfill material between the bottom package and the substrate, the second portion of the first redistribution layer having a sidewall in physical contact with a sidewall of the underfill material; and a molding compound on a top surface of the substrate, between the bottom package and the top package and along sidewalls of the top package, the molding compound being in physical contact with the top surfaces and sidewalls of both the first portion and the third portion of the first redistribution layer, the molding compound further being in physical contact with the top surface and sidewalls of first portion of the second redistribution layer, the molding compound completely separating the first portion of the the first redistribution layer from the first portion of the second redistribution layer. 2. The PoP device of claim 1 , wherein the first redistribution layer comprises: a first end coupled to a conductive element of the top package; and a second end coupled to the first conductive contact on the substrate. 3. The PoP device of claim 1 further comprising third redistribution layer and a fourth redistribution layer coupling the top package to the substrate. 4. The PoP device of claim 1 , wherein the top package comprises more than one package. 5. The PoP device of claim 1 , wherein the top package comprises passive components and a microelectromechanical systems (MEMS) sensor, at least one of the passive components being completely surrounded by the molding compound, the MEMS sensor having a top surface coplanar with a top surface of the molding compound. 6. The PoP device of claim 1 , wherein the top package further comprises a second set of conductive elements coupling the top package to the first redistribution layer, and wherein the substrate further comprises metallization layers coupling the first redistribution layer to the first set of conductive elements. 7. The PoP device of claim 6 , wherein the first set and second set of conductive elements are solder bumps, and wherein the substrate further comprises a plurality of under bump metallizations (UBMs) coupling the first set of conductive elements to the metallization layers of the substrate. 8. A PoP device comprising: a substrate comprising metallization layers; a first package comprising a first set of conductive elements, the first set of conductive elements coupled to the metallization layers; an underfill material between the first package and the substrate; a second package over the first package, the second package comprising a second set of conductive elements; a first redistribution layer directly contacting a top surface of the first package, a first sidewall of the first package, and a portion of the underfill material, the first redistribution layer consisting of: a conductive seed layer on the first package and the substrate; and a conductive layer on the conductive seed layer, the conductive layer having a first surface, a second surface, and a third surface, each of the first, second, and third surfaces being over the top surface of the first package, the first surface being substantially parallel to the top surface of the first package, the second and third surfaces being substantially perpendicular to the top surface of the first package, the first surface extending from the second surface to the third surface; a second redistribution layer directly contacting the top surface and a second sidewall of the first package; and a molding compound surrounding the first and second packages, the molding compound being between the first and second packages and on a top surface of the substrate, the molding compound between the first and second packages completely separating the second redistribution layer from the first redistribution layer, the molding compound between the first and second packages extending along and directly contacting each of the first, second, and third surfaces of the conductive layer of the first redistribution layer. 9. The PoP device of claim 8 , wherein the first package comprises two or more stacked chips coupled to each other. 10. The PoP device of claim 8 , wherein the first and second set of conductive elements comprise solder bumps, the first set of conductive elements coupled to UBMs in the substrate, and the second set of conductive elements coupled to UBMs in at least one of the first and second redistribution layers. 11. A Package-on-Package (PoP) device comprising: a first package on a substrate; a first set of connector elements coupling the first package to the substrate; a first redistribution layer directly contacting a top surface and a first sidewall of the first package, the first redistribution layer comprising: a conductive seed layer directly contacting the top surface and the first sidewall of the first package, the conductive seed layer directly contacting the substrate; a conductive layer on the conductive seed layer; and at least one under bump metallization (UBM) on the conductive layer; a second redistribution layer directly contacting the top surface and a second sidewall of the first package, wherein the second redistribution layer is separated from the first redistribution layer by a molding compound; a second package over the first redistribution layer and the se
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