Connection member, semiconductor device, and stacked structure

US9548279B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9548279-B2
Application numberUS-201414466493-A
CountryUS
Kind codeB2
Filing dateAug 22, 2014
Priority dateSep 25, 2013
Publication dateJan 17, 2017
Grant dateJan 17, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A connection member according to an embodiment includes a dielectric material, a penetrating via penetrating through the dielectric material, a first metal plane provided in the dielectric material, the first metal plane being perpendicular to an extension direction of the penetrating via, the first metal plane crossing the penetrating via, and a second metal plane provided n or on the dielectric material in parallel with the extension direction of the penetrating via, the second metal plane connected to the first metal plane.

First claim

Opening claim text (preview).

What is claimed is: 1. A connection member comprising: a dielectric material; a penetrating via penetrating through the dielectric material; a first metal plane provided in the dielectric material, the first meta plane being perpendicular to an extension direction of the penetrating via, the first metal plane crossing the penetrating via, the first metal plane connected to the penetrating via; and a second metal plane provided in or on the dielectric material, the second metal plane provided in parallel with the extension direction of the penetrating via, the second metal plane directly connected to the first metal plane, the second metal plane having a plate-shape, wherein the second metal plane includes a first wide portion, a second wide portion, a third wide portion, a first narrow portion and a second narrow portion, the first narrow portion provide between the first wide portion and the second wide portion, the second narrow portion provided between the second wide portion and the third wide portion. 2. The connection member according to claim 1 further comprising a third metal plane provided in the dielectric material, the third metal plane being perpendicular to the extension direction of the penetrating via, the third metal plane crossing the penetrating via, the third metal plane connected to the second metal plane. 3. The connection member according to claim 1 , wherein the second metal plane includes wide portions and narrow portions connecting the wide portions. 4. The connection member according to claim 1 further comprising: a third metal plane provided parallel to the extension direction of the penetrating via, the third metal plane connected to the first metal plane, the third metal plane facing the second metal plane, the penetrating via interposed between the second metal plane and the third metal plane; a fourth metal plane provided in the dielectric material, the fourth metal being perpendicular to the extension direction of the penetrating via, the fourth metal crossing the penetrating via; a fifth metal plane provided in parallel with the extension direction of the penetrating via, the fifth metal plane connected to the fourth metal plane; and a sixth metal plane provided in parallel with the extension direction of the penetrating via, the sixth metal plane connected to the fourth metal plane, the sixth metal plane facing the fifth metal plane, the penetrating via interposed between the fifth metal plane and sixth metal plane. 5. The connection member according to claim 1 , wherein the second wide portion is directly connected to the first metal plane. 6. The connection member according to claim 1 , wherein the dielectric material includes resin filled with filler.

Assignees

Inventors

Classifications

  • batch processes · CPC title

  • comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

  • Bond pads specially adapted therefor · CPC title

  • on encapsulations · CPC title

  • in gaseous form, e.g. by CVD or PVD · CPC title

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Frequently asked questions

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What does patent US9548279B2 cover?
A connection member according to an embodiment includes a dielectric material, a penetrating via penetrating through the dielectric material, a first metal plane provided in the dielectric material, the first metal plane being perpendicular to an extension direction of the penetrating via, the first metal plane crossing the penetrating via, and a second metal plane provided n or on the dielectr…
Who is the assignee on this patent?
Toshiba Kk
What technology area does this patent fall under?
Primary CPC classification H10W70/635. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 17 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).