Device for current measurement

Patent metadata

Field	Value
Publication number	US-9547024-B2
Application number	US-201414264635-A
Country	US
Kind code	B2
Filing date	Apr 29, 2014
Priority date	May 7, 2013
Publication date	Jan 17, 2017
Grant date	Jan 17, 2017

Abstract

A device for current measurement comprises a substrate with a first current conductor and a current sensor with a second current conductor. The current sensor is mounted above the first current conductor on the substrate. The second current conductor is formed with integrally attached first and second terminal leads through which the current to be measured is supplied and discharged. The current sensor further comprises a semiconductor chip with a magnetic field sensor mounted on the second current conductor on the side of the second current conductor facing the substrate. The magnetic field sensor is sensitive to a component of the magnetic field extending parallel to the surface of the semiconductor chip and perpendicular to the second current conductor. The second current conductor extends above and parallel to the first current conductor.

First claim

What is claimed is:

1. Device for current measurement, comprising
a substrate with a first current conductor, and
a current sensor with a second current conductor, wherein the current sensor
is configured to measure a sum of or a difference between a first current flowing through the first current conductor and a second current flowing through the second current conductor,
is encased in an IC (integrated circuit) housing and is mounted above the first current conductor on the substrate, wherein the second current conductor is formed with integrally attached first and second terminal leads, and comprises third electrical terminal leads and a semiconductor chip having an active surface with a magnetic field sensor and electronic circuits for the operation of the magnetic field sensor, the semiconductor chip mounted on the second current conductor, wherein
the first and second terminal leads protrude from the housing on a first side wall of the housing and the third terminal leads on a side wall of the housing opposite of the first side wall, and are bent off towards the substrate,
the semiconductor chip is mounted on the side of the second current conductor facing the substrate,
electrical terminals of the semiconductor chip are connected via bonding wires to the third terminal leads,
the magnetic field sensor is sensitive to a component of the magnetic field extending parallel to the active surface of the semiconductor chip and perpendicular to the second current conductor,
the second current conductor extends above and parallel to the first current conductor, so that a magnetic field produced by the current flowing through the first current conductor and a magnetic field produced by the current flowing through the second current conductor are sensed by the magnetic field sensor.

2. Device according to claim 1 , wherein the first current to be measured and the second current to be measured are the same current, and wherein the second current conductor is electrically connected to the second terminal leads in such a way that the current to be measured flows through the first current conductor and in the opposite direction through the second current conductor.

3. Device according to claim 2 , wherein the substrate comprises at least one further current conductor which is connected in series with the first current conductor in such a way that the current to be measured flows in the same direction through the first current conductor and the at least one further current conductor.

4. Device according to claim 1 , wherein the device is configured in such a way that in operation the first current to be measured flows in a predetermined direction through the first current conductor and the second current to be measured flows in the same direction through the second current conductor, so that the magnetic field generated by the first current and the magnetic field generated by the second current point in opposite directions at the location of the magnetic field sensor, and that a width and a distance of the first current conductor from the magnet field sensor and a width and a distance of the second current conductor from the magnetic field sensor are adjusted to each other in such a way that the magnetic field generated by the first current and the magnetic field generated by the second current are equally strong with respect to their amount at the location of the magnetic field sensor if the two currents are of the same strength.

5. Device according to claim 1 , wherein a magnetic shielding is attached on the side of the second current conductor opposite of the semiconductor chip.

6. Device according to claim 2 , wherein a magnetic shielding is attached on the side of the second current conductor opposite of the semiconductor chip.

7. Device according to claim 3 , wherein a magnetic shielding is attached on the side of the second current conductor opposite of the semiconductor chip.

8. Device according to claim 4 , wherein a magnetic shielding is attached on the side of the second current conductor opposite of the semiconductor chip.

9. Device according to claim 1 , wherein the magnetic field sensor comprises at least one magnetic field concentrator and at least one Hall element, wherein the Hall element is either a horizontal Hall element which is arranged in the region of the edge of the magnetic field concentrator beneath the magnetic field concentrator, or a vertical Hall element which is arranged in the region of the edge of the magnetic field concentrator adjacent to the magnetic field concentrator.

10. Device according to claim 2 , wherein the magnetic field sensor comprises at least one magnetic field concentrator and at least one Hall element, wherein the Hall element is either a horizontal Hall element which is arranged in the region of the edge of the magnetic field concentrator beneath the magnetic field concentrator, or a vertical Hall element which is arranged in the region of the edge of the magnetic field concentrator adjacent to the magnetic field concentrator.

11. Device according to claim 4 , wherein the magnetic field sensor comprises at least one magnetic field concentrator and at least one Hall element, wherein the Hall element is either a horizontal Hall element which is arranged in the region of the edge of the magnetic field concentrator beneath the magnetic field concentrator, or a vertical Hall element which is arranged in the region of the edge of the magnetic field concentrator adjacent to the magnetic field concentrator.

12. Device according to claim 1 , wherein the magnetic field sensor is one of:
an AMR (anisotropic magnetoresistive) sensor, a GMR (giant magnetoresistive) sensor, and a fluxgate sensor.

13. Device according to claim 1 , wherein a ceramic plate is arranged between the semiconductor chip and the second current conductor of the current sensor.

14. Device according to claim 13 , wherein the ceramic plate protrudes beyond the semiconductor chip on all four sides by at least 0.1 mm.

15. Device according to claim 13 , wherein the ceramic plate protrudes beyond the semiconductor chip on all four sides by at least 0.4 mm.

16. Device according to claim 2 , wherein a ceramic plate is arranged between the semiconductor chip and the second current conductor of the current sensor.

17. Device according to claim 16 , wherein the ceramic plate protrudes beyond the semiconductor chip on all four sides by at least 0.1 mm.

18. Device according to claim 16 , wherein the ceramic plate protrudes beyond the semiconductor chip on all four sides by at least 0.4 mm.

19. Device according to claim 9 , wherein a ceramic plate is arranged between the semiconductor chip and the second current conductor of the current sensor.

20. Device according to claim 19 , wherein the ceramic plate protrudes beyond the semiconductor chip on all four sides by at least 0.1 mm.

21. Device according to claim 19 , wherein the ceramic plate protrudes beyond the semiconductor chip on all four sides by at least 0.4 mm.

Assignees

• Melexis Technologies Nv

Inventors

• Racz Robert
• Ackermann Mathieu
• Chen Jian

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• G01R15/207

  Constructional details independent of the type of device used · CPC title

• G01R19/0092 Primary

  Measuring current only · CPC title

• G01R33/07

  Hall effect devices · CPC title