Sensor structures, systems and methods with improved integration and optimized footprint
US-2015210535-A1 · Jul 30, 2015 · US
US9546923B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9546923-B2 |
| Application number | US-201414163205-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 24, 2014 |
| Priority date | Jan 24, 2014 |
| Publication date | Jan 17, 2017 |
| Grant date | Jan 17, 2017 |
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Embodiments relate to sensors and more particularly to structures for and methods of forming sensors that are easier to manufacture as integrated components and provide improved deflection of a sensor membrane, lamella or other movable element. In embodiments, a sensor comprises a support structure for a lamella, membrane or other movable element. The support structure comprises a plurality of support elements that hold or carry the movable element. The support elements can comprise individual points or feet-like elements, rather than a conventional interconnected frame, that enable improved motion of the movable element, easier removal of a sacrificial layer between the movable element and substrate during manufacture and a more favorable deflection ratio, among other benefits.
Opening claim text (preview).
What is claimed is: 1. A sensor device comprising: a substrate; a plurality of support elements spaced apart from each other and arranged on the substrate; and a moveable element supported on and spaced apart from the substrate by the plurality of support elements, wherein the moveable element, the substrate and the plurality of support elements define a cavity into which the moveable element can deflect in response to a physical quantity to be sensed by the sensor device, wherein the plurality of support elements comprise punctiform structures. 2. The sensor device of claim 1 , wherein the moveable element comprises a membrane or a lamella. 3. The sensor device of claim 2 , wherein the moveable element comprises silicon. 4. The sensor device of claim 3 , wherein the silicon comprises polycrystalline silicon. 5. The sensor device of claim 1 , wherein the sensor device comprises a pressure sensor device, and wherein the physical quantity to be sensed is pressure. 6. The sensor device of claim 5 , wherein the pressure is sensed by sensing a capacitance between the moveable element and the substrate. 7. The sensor device of claim 1 , wherein a lateral dimension of a punctiform structure is less than about 3,000 nanometers (nm). 8. The sensor device of claim 7 , wherein the punctiform structure has lateral dimensions of about 500 nm by about 500 nm. 9. The sensor device of claim 1 , wherein the sensor device comprises a plurality of sensors, each of the plurality of sensors comprising a plurality of support elements and a portion of the moveable element supported on that plurality of support elements. 10. The sensor device of claim 9 , wherein adjacent ones of the plurality of sensors have at least one of the plurality of support elements in common. 11. The sensor device of claim 9 , further comprising a sealing layer arranged between the substrate and the moveable element along a perimeter of the sensor device. 12. The sensor device of claim 11 , wherein the sealing layer comprises a dielectric layer. 13. A sensor device comprising: a substrate; a plurality of support elements spaced apart from each other and arranged on the substrate; and a moveable element supported on and spaced apart from the substrate by the plurality of support elements, wherein the moveable element, the substrate and the plurality of support elements define a cavity into which the moveable element can deflect in response to a physical quantity to be sensed by the sensor device, wherein the substrate comprises a semiconductor material comprising a plurality of distinct isolation portions formed of an electrically insulating material, and wherein each of the plurality of support elements is arranged on a respective one of the plurality of distinct isolation portions. 14. The sensor device of claim 1 , wherein a ratio of maximum deflection of the moveable element to average deflection of the moveable element is less than about 2. 15. The sensor device of claim 1 , wherein the moveable element and the plurality of support elements are integrally formed with one another. 16. A method comprising: providing a substrate; providing a moveable element supported on the substrate by a plurality of support elements spaced apart from one another, wherein the plurality of support elements comprise punctiform structures; and sensing a physical quantity by a deflection of the moveable element toward the substrate into a cavity defined by the substrate, the moveable element and the plurality of support elements. 17. The method of claim 16 , wherein sensing a physical quantity further comprises sensing a capacitance between the substrate and the moveable element. 18. The method of claim 16 , wherein for each of the plurality of support elements a distance to an adjacent one of the plurality of support elements is in a range of about 2 micrometers (μm) to about 20 μm. 19. The method of claim 16 , wherein the moveable element comprises a silicon layer.
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