Frequency tuning for pulsed radio frequency plasma processing

US9544987B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9544987-B2
Application numberUS-201414320268-A
CountryUS
Kind codeB2
Filing dateJun 30, 2014
Priority dateJun 30, 2014
Publication dateJan 10, 2017
Grant dateJan 10, 2017

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Abstract

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This disclosure describes systems, methods, and apparatus for pulsed RF power delivery to a plasma load for plasma processing of a substrate. In order to maximize power delivery, a calibration phase using a dummy substrate or no substrate in the chamber, is used to ascertain a preferred fixed initial RF frequency for each pulse. This fixed initial RF frequency is then used at the start of each pulse during a processing phase, where a real substrate is used and processed in the chamber.

First claim

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What is claimed is: 1. A method of selecting a fixed initial RF frequency for each of a plurality of RF pulses provided to a plasma load, the method comprising: providing pulsed RF power to a plasma load, where each pulse comprises RF power having a controllable frequency, and where a plasma having the plasma load interacts with a dummy substrate, or no substrate, in a plasma chamber; tuning an initial RF frequency for each pulse in a string of pulses, pulse to pulse, in a calibration process, by minimizing a difference between a characteristic indicative of the pulsed RF power at a start of each pulse and a desired characteristic of the pulsed RF power at a start of each pulse until the difference between the characteristic for a start to two consecutive pulses is below a threshold; then selecting the initial RF frequency as a fixed initial RF frequency for use in a processing run using a real substrate; and tuning the RF frequency during processing within each pulse but returning to the fixed initial RF frequency at a start of each pulse. 2. The method of claim 1 , wherein the characteristic indicative of the pulsed RF power is reflected power. 3. The method of claim 1 , wherein the characteristic indicative of the pulsed RF power is load impedance power. 4. The method of claim 1 , wherein the characteristic indicative of the pulsed RF power is a density of the plasma. 5. The method of claim 1 , wherein the processing run includes providing pulsed RF power to the plasma load where an initial RF frequency at a start of each pulse is set to the fixed initial RF frequency. 6. A non-transitory, tangible computer readable storage medium, encoded with processor readable instructions to perform a method for frequency tuning a power source to optimize delivered power to a plasma load, the method comprising: in a calibration phase, tuning an initial RF frequency at a start of each pulse in a string of RF pulses, pulse to pulse, until a difference between a characteristic indicative of power at the start of each pulse and a desired characteristic of the power at the start of each pulse, for a start to two consecutive pulses, is below a threshold; then selecting the initial RF frequency as a fixed initial RF frequency to be used during a processing phase; and in the processing phase, setting an initial RF frequency for all pulses in the processing phase equal to the fixed initial RF frequency selected during the calibration phase; and tuning the RF frequency of pulsed RF power during each pulse, but returning to the fixed initial RF frequency at a start of each pulse. 7. The non-transitory, tangible computer readable storage medium of claim 6 , wherein the characteristic indicative of the pulsed RF power is reflected power. 8. The non-transitory, tangible computer readable storage medium of claim 6 , wherein the characteristic indicative of the pulsed RF power is load impedance power. 9. The non-transitory, tangible computer readable storage medium of claim 6 , wherein the characteristic indicative of the pulsed RF power is a density of the plasma. 10. A power delivery system comprising: a power source configured to provide pulsed RF power to a plasma load via a matching network; a sensor configured to sample a characteristic indicative of the pulsed RF power; a controller in communication with the sensor and the power source and executable to: in a calibration phase, tuning an initial RF frequency at a start of each pulse in a string of RF pulses, pulse to pulse, until a difference between a characteristic indicative of power at the start of each pulse and a desired characteristic of the power at the start of each pulse, for a start to two consecutive pulses, is below a threshold; then selecting the initial RF frequency as a fixed initial RF frequency to be used during a processing phase; and in the processing phase, setting an initial RF frequency for all pulses in the processing phase equal to the fixed initial RF frequency selected during the calibration phase; and tuning the RF frequency of pulsed RF power during each pulse, but returning to the fixed initial RF frequency at a start of each pulse. 11. The power delivery system of claim 10 , wherein the sensor is a reflected power sensor. 12. The power delivery system of claim 11 , wherein the sensor is a directional coupler. 13. The power delivery system of claim 10 , wherein the sensor is a delivered power sensor. 14. The power delivery system of claim 10 , wherein the sensor is an impedance sensor. 15. The power delivery system of claim 10 , wherein the sensor is a plasma density sensor. 16. The power delivery system of claim 10 , wherein the power source is in communication with a switching circuit that converts RF power from the power source to the pulsed RF power. 17. The power delivery system of claim 10 , wherein the sensor is part of an oscilloscope.

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What does patent US9544987B2 cover?
This disclosure describes systems, methods, and apparatus for pulsed RF power delivery to a plasma load for plasma processing of a substrate. In order to maximize power delivery, a calibration phase using a dummy substrate or no substrate in the chamber, is used to ascertain a preferred fixed initial RF frequency for each pulse. This fixed initial RF frequency is then used at the start of each …
Who is the assignee on this patent?
Advanced Energy Ind Inc
What technology area does this patent fall under?
Primary CPC classification H05H1/46. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 10 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).