Negative electrode active material for non-aqueous electrolyte secondary battery and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9543578-B2
Application number	US-201213662061-A
Country	US
Kind code	B2
Filing date	Oct 26, 2012
Priority date	Nov 1, 2011
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

A method for manufacturing a negative electrode active material for a secondary battery that uses a non-aqueous electrolyte, including the steps of: depositing silicon according to an electron beam vapor-deposition method with metallic silicon as a raw material on a substrate of which temperature is controlled from 800 to 1100° C. at a vapor deposition rate exceeding 1 kg/hr in the range of film thickness of 2 to 30 mm; and pulverizing and classifying the deposited silicon to obtain the negative electrode active material. As a result, there is provided a method for manufacturing a negative electrode active material of silicon particles as an active material useful for a negative electrode of a non-aqueous electrolyte secondary battery that is, while maintaining high initial efficiency and battery capacity of silicon, excellent in the cycle characteristics and has a reduced volume change during charge/discharge.

First claim

What is claimed is:

1. A method for manufacturing a negative electrode active material for a secondary battery that uses a non-aqueous electrolyte, comprising the steps of:
depositing silicon according to an electron beam vapor-deposition method with metallic silicon as a raw material on a substrate, a temperature of the substrate being controlled from 800 to 1100° C., wherein the depositing is performed at a vapor deposition rate exceeding 1 kg/hr, and is performed so that the film thickness of the deposited silicon is in the range of 2 to 30 mm; and
pulverizing and classifying the deposited silicon to obtain the negative electrode active material.

2. The method for manufacturing a negative electrode active material for a non-aqueous electrolyte secondary battery according to claim 1 , wherein, when silicon is deposited on the substrate with the metallic silicon as a raw material, one or more of dopants selected from boron, aluminum, phosphorus, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, germanium, arsenic, tin, tantalum, and tungsten are doped in the silicon to be deposited.

3. The method for manufacturing a negative electrode active material for a non-aqueous electrolyte secondary battery according to claim 2 , wherein the pulverization and classification are conducted so that a particle size of the negative electrode active material for a non-aqueous electrolyte secondary battery is 1 μm or more and 20 μm or less by the volume average value D 50 according to a laser diffraction scattering particle size distribution measurement method.

4. The method for manufacturing a negative electrode active material for a non-aqueous electrolyte secondary battery according to claim 3 , wherein the substrate is made of a material that does not form an alloy with silicon when depositing silicon.

5. The method for manufacturing a negative electrode active material for a non-aqueous electrolyte secondary battery according to claim 2 , wherein the substrate is made of a material that does not form an alloy with silicon when depositing silicon.

6. The method for manufacturing a negative electrode active material for a non-aqueous electrolyte secondary battery according to claim 1 , wherein the pulverization and classification are conducted so that a particle size of the negative electrode active material for a non-aqueous electrolyte secondary battery is 1 μm or more and 20 μm or less by the volume average value D 50 according to a laser diffraction scattering particle size distribution measurement method.

7. The method for manufacturing a negative electrode active material for a non-aqueous electrolyte secondary battery according to claim 6 , wherein the substrate is made of a material that does not form an alloy with silicon when depositing silicon.

8. The method for manufacturing a negative electrode active material for a non-aqueous electrolyte secondary battery according to claim 1 , wherein the substrate is made of a material that does not form an alloy with silicon when depositing silicon.

9. The method for manufacturing a negative electrode active material for a non-aqueous electrolyte secondary battery according to claim 1 , wherein the negative electrode active material is a polycrystalline silicon that has a true density higher than 2.250 g/cm 3 and less than 2.330 g/cm 3 , a volume average value D 50 of the negative electrode active material according to a laser scattering and diffracting particle size distribution measurement method is 1 μm to 20 μm , and a BET specific surface area of the negative electrode active material is 0.1 to 2.0 m 2 /g.

10. The method for manufacturing a negative electrode active material for a non-aqueous electrolyte secondary battery according to claim 1 , wherein in the step of depositing silicon, a degree of decompression is 1×10 −5 to 1×10 −2 Pa, and an output of an electron gun is 100 to 300 kW.

Assignees

• Shinetsu Chemical Co

Inventors

• Nakanishi Tetsuo
• Yamada Yoshiyasu
• Taniguchi Kazuyuki

Classifications

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

• H01M4/622

  being polymers · CPC title

• Y02E60/122

  Cross-Sectional Technologies · mapped topic

• H01M4/386 Primary

  Silicon or alloys based on silicon · CPC title

• C01P2004/62

  Submicrometer sized, i.e. from 0.1-1 micrometer · CPC title