Array substrates and display devices
US-2024347681-A1 · Oct 17, 2024 · US
US9543543B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9543543-B2 |
| Application number | US-201414262979-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 28, 2014 |
| Priority date | Apr 30, 2013 |
| Publication date | Jan 10, 2017 |
| Grant date | Jan 10, 2017 |
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A substrate for a display apparatus includes a barrier layer disposed on a base substrate. The barrier layer includes a silicon oxide layer, and the silicon oxide layer includes a first part and a second part along a thickness direction of the barrier layer. The amount of silicon in the first part is different from the amount of silicon in the second part.
Opening claim text (preview).
What is claimed is: 1. A substrate for a display apparatus, the substrate comprising: a base substrate; and a barrier layer disposed on the base substrate, wherein the barrier layer includes a silicon oxide layer and the silicon oxide layer includes a first part and a second part along a thickness direction of the barrier layer, wherein an amount of silicon in the first part is different from an amount of silicon in the second part, wherein: the barrier layer includes a first barrier layer which includes the first part and a second barrier layer which includes the second part that contains a greater amount of silicon than the first barrier layer, the second barrier layer is distal to the substrate than the first barrier layer such that the first barrier layer is between the substrate and the second barrier layer, the first barrier layer being a barrier layer closest to the base substrate, and wherein a plurality of first and second barrier layers are alternately stacked on one another. 2. The substrate as claimed in claim 1 , wherein: a thickness of the second barrier layer of the silicon oxide layer is less than a thickness of the first barrier layer. 3. The substrate as claimed in claim 1 , wherein the first barrier layer contains SiO 2 . 4. The substrate as claimed in claim 3 , wherein a composition ratio (c/d) of silicon and oxygen of the second barrier layer (Si c O d ) is greater than about 0.5 and equal to or less than about 1.0. 5. The substrate as claimed in claim 1 , wherein the base substrate includes a plastic material. 6. The substrate as claimed in claim 5 , wherein the barrier layer is formed directly on the base substrate. 7. The substrate as claimed in claim 1 , wherein the base substrate is a flexible. 8. A display apparatus, comprising: a plastic substrate; a barrier layer on the plastic substrate; a thin film transistor on the plastic substrate; and a display device on the plastic substrate and electrically connected to the thin film transistor, wherein the display device includes an organic emission layer and wherein the barrier layer is disposed between the plastic substrate and the thin film transistor, the barrier layer including a silicon oxide layer having a first part and a second part along a thickness direction, the first and second parts having different amounts of silicon, wherein: the second part contains a greater amount of silicon than the first part, the first part is a part of the barrier layer closest to the plastic substrate, wherein the barrier layer comprises a first barrier layer including the first part and a second barrier layer including the second part, and a plurality of first and second barrier layers are alternately stacked on one another. 9. The display apparatus as claimed in claim 8 , wherein the barrier layer comprises a layer including the first part having a first amount of silicon and a layer including the second part having a second amount of silicon greater than the first amount of silicon. 10. The display apparatus as claimed in claim 9 , wherein a composition ratio (c/d) of silicon and oxygen of the layer having the second amount of silicon is greater than about 0.5 and equal to or less than about 1.0. 11. The display apparatus as claimed in claim 9 , wherein a plurality of layers having the first amount of silicon and the second amount of silicon are alternately formed along the thickness direction. 12. The display apparatus as claimed in claim 9 , wherein the plastic substrate includes polyimide. 13. The display apparatus as claimed in claim 8 , wherein the first part includes Si a O b and the second part includes Si c O d , and wherein a/b≠c/d. 14. The display apparatus as claimed in claim 13 , wherein a thickness of the first barrier layer is different from a thickness of the second barrier layer. 15. The display apparatus as claimed in claim 14 , wherein the thickness of the first barrier layer is greater than the thickness of the second barrier layer. 16. The display apparatus as claimed in claim 13 , wherein a thickness of the first barrier layer is about 1,000 Åto about 10,000 Å. 17. The display apparatus as claimed in claim 13 , wherein a thickness of the second barrier layer is about 200 Åto about 5,000 Å. 18. The display apparatus as claimed in claim 8 , wherein the display device comprises: a pixel electrode; an intermediate layer on the pixel electrode and including an organic emission layer; and a counter electrode facing the pixel electrode.
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