Light emitting device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9543475-B2
Application number	US-201514940720-A
Country	US
Kind code	B2
Filing date	Nov 13, 2015
Priority date	Nov 14, 2014
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

A light-emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a plurality of V-pits. The light-emitting device further includes a layer-quality improvement layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a plurality of V-pits with substantially same size and shape as the plurality of V-pits of the active layer, wherein layer-quality improvement layer is a group III-V semiconductor layer including Al or In. Due to the improved layer quality, the luminescent quality of the light-emitting device is improved.

First claim

What is claimed is:

1. A light-emitting device comprising:
a first conductive type semiconductor layer;
a second conductive type semiconductor layer;
an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer including a plurality of V-pits; and
a layer-quality improvement layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the layer-quality improvement layer including a plurality of V-pits, each of the plurality of V-pits of the layer quality improvement layer having substantially same size and shape as corresponding ones of the plurality of V-pits of the active layer,
wherein the layer-quality improvement layer is a group III-V semiconductor layer including Al or In.

2. The light-emitting device of claim 1 , wherein the layer-quality improvement layer includes M x Ga 1-x N, where M is Al or In and 0.01≦x≦0.3.

3. The light-emitting device of claim 2 , wherein a range of x is in 0.02≦x≦0.08.

4. The light-emitting device of claim 2 , wherein the layer-quality improvement layer is between the first conductive type semiconductor layer and the active layer.

5. The light-emitting device of claim 4 , wherein a density of Al in the layer-quality improvement layer is substantially constant.

6. The light-emitting device of claim 4 , wherein a roughness of a surface of the layer-quality improvement layer that is opposite the first conductive type semiconductor layer is substantially less than a roughness of a surface of the first conductive type semiconductor layer at an interface between the layer-quality improvement layer and the first conductive type semiconductor layer.

7. The light-emitting device of claim 6 , wherein, when measured via an atomic force microscope (AFM), the roughness of the surface of the layer-quality improvement layer that is opposite the first conductive type semiconductor layer is equal to or less than 60% of the roughness of the surface of the first conductive type semiconductor layer at the interface between the layer-quality improvement layer and the first conductive type semiconductor layer.

8. The light-emitting device of claim 1 , further comprising:
a V-pit generation layer between the first conductive type semiconductor layer and the layer-quality improvement layer.

9. The light-emitting device of claim 8 , wherein the layer-quality improvement layer is between the V-pit generation layer and the active layer.

10. The light-emitting device of claim 8 , wherein,
the V-pit generation layer includes a plurality of V-pits that form the plurality of V-pits of the active layer, and
the layer-quality improvement layer is on a top surface of the V-pit generation layer.

11. The light-emitting device of claim 10 , wherein the layer-quality improvement layer at least partially fills the plurality of V-pits of the V-pit generation layer.

12. The light-emitting device of claim 8 , further comprising;
a superlattice layer between the layer-quality improvement layer and the active layer.

13. The light-emitting device of claim 12 , wherein,
the plurality of V-pits of the layer-quality improvement layer are recessed into the plurality of V-pits of the V-pit generation layer, and
the superlattice layer includes a plurality of V-pits recessed into the plurality of V-pits of the layer-quality improvement layer.

14. The light-emitting device of claim 13 , wherein the plurality of V-pits of the active layer are recessed into the plurality of V-pits of the superlattice layer.

15. The light-emitting device of claim 8 , wherein the layer-quality improvement layer includes a multistack structure comprising a plurality of GaN layers and M x Ga 1-x N layers that are alternately stacked, wherein M is Al or In and 0.01≦x≦0.3.

16. The light-emitting device of claim 8 , wherein the layer-quality improvement layer includes a superlattice layer, and the superlattice layer includes GaN and M x Ga 1-x N, where M is Al or In and 0.01≦x≦0.3.

17. The light-emitting device of claim 1 , wherein the layer-quality improvement layer is between the active layer and the second conductive type semiconductor layer.

18. The light-emitting device of claim 17 , wherein the plurality of V-pits of the layer-quality improvement layer are covered by the second conductive type semiconductor layer.

19. The light-emitting device of claim 17 , further comprising:
a superlattice layer between the active layer and the first conductive type semiconductor layer,
wherein the plurality of V-pits of the active layer extend into the superlattice layer.

20. A light-emitting package comprising:
a package substrate;
the light-emitting device of claim 1 , wherein the light-emitting device is on a printed circuit board; and
an encapsulation member that encapsulates the light-emitting device.

21. A light-emitting device comprising:
a first conductive type semiconductor layer;
a second conductive type semiconductor layer;
an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;
a V-pit generation layer between the first conductive type semiconductor layer and the active layer; and
a layer-quality improvement layer on at least a portion of a surface of the V-pit generation layer facing the active layer, the layer-quality improvement layer including an increased concentration of Al in relation to a concentration of Al in the V-pit generation layer.

22. The light-emitting device of claim 21 , wherein,
the V-pit generation layer includes a GaN layer, and
the layer-quality improvement layer includes Al x Ga 1-x N, where 0.01≦x≦0.3.

23. The light-emitting device of claim 22 , wherein,
a thickness of the layer-quality improvement layer is about 5 through 20% of a thickness of the V-pit generation layer.

24. A method of manufacturing a light-emitting device, the method comprising:
forming a first conductive type semiconductor layer on a substrate;
forming a V-pit generation layer on the first conductive type semiconductor layer, the V-pit generation layer including a plurality of V-pits;
forming a layer-quality improvement layer on the V-pit generation layer, wherein the forming of the layer-quality improvement layer includes,
increasing a deposition temperature by about 100 through 150° C. with respect to a deposition temperature during the forming of the V-pit generation layer, and
additionally supplying an M precursor, wherein M is Al or In;

forming an active layer on the layer-quality improvement layer; and
forming a second conductive type semiconductor layer on the active layer.

25. The method of claim 24 , wherein the forming of the layer-quality improvement layer includes,
increasing a deposition temperature by about 100 through 150° C. with respect to a deposition temperature during the forming of the V-pit generation layer; and
stopping the additionally supplying of the M precursor.

26. The method of claim 25 , wherein the additionally supplying of the M precursor and the stopping of the additionally supplying are repeated until the layer-quality improvement layer has a desired thickness.

27. A method of manufacturing a light-emitting device, the method comprising:
forming a first conductive type semiconductor layer on a substrate;
forming a V-pit generation layer on th

Assignees

• Lim Jin-Young
• Sakong Tan
• Kim Byoung-Kyun
• Kim Jong-Hak
• Samsung Electronics Co Ltd

Inventors

• Lim Jin-Young
• Sakong Tan
• Kim Byoung-Kyun
• Kim Jong-Hak

Classifications

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H01L33/24 Primary

  Electricity · mapped topic

• H01L33/0075

  Electricity · mapped topic

• H01L33/22

  Electricity · mapped topic

• H01L2924/00014

  Electricity · mapped topic