Production of spacers at flanks of a transistor gate

Patent metadata

Field	Value
Publication number	US-9543409-B2
Application number	US-201514855834-A
Country	US
Kind code	B2
Filing date	Sep 16, 2015
Priority date	Sep 17, 2014
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

The production of spacers at flanks of a transistor gate, including a step of forming a dielectric layer covering the gate and a peripheral region of a layer of semiconductor material surrounding the gate, including forming a superficial layer covering the gate and the peripheral region; partially removing the superficial layer configured so as to completely remove the superficial layer at the peripheral region while preserving a residual part of the superficial layer at the flanks; and selective etching of the dielectric layer vis-à-vis the material of the residual part of the superficial layer and vis-à-vis the semiconductor material.

First claim

The invention claimed is:

1. A method for producing spacers at flanks of a transistor gate, the gate being situated above a layer of a semiconductor material, the method comprising successively the following steps:
forming a dielectric layer that covers the gate and at least a peripheral region of the layer of semiconductor material surrounding the gate;
anisotropic etching of the dielectric layer, thereby reducing a thickness of the dielectric layer at a region covering an upper surface of the gate and at the peripheral region, while substantially preserving a thickness of the dielectric layer at the flanks;
forming a superficial layer covering the dielectric layer;
partial etching of the superficial layer configured so as to completely remove the superficial layer at the peripheral region while preserving a residual part of the superficial layer at the flanks, and while at least partly preserving the dielectric layer at the peripheral region; and
then, after the partial etching, selectively etching the dielectric layer with respect to the residual part of the superficial layer and with respect to the layer of semiconductor material.

2. The method according to claim 1 , wherein the formation of the superficial layer comprises a modification to a material of only part of the thickness of the dielectric layer.

3. The method according to claim 2 , wherein the modification is an oxidation.

4. The method according to claim 3 , wherein the oxidation is carried out conformingly at the flanks and the peripheral region.

5. The method according to claim 3 , wherein the oxidation is carried out using a plasma.

6. The method according to claim 5 , wherein an oxygen plasma is used in which an energy of ions in the plasma is between 8 eV and 13 eV.

7. The method according to claim 1 , wherein the formation of the superficial layer comprises a deposition of a layer of material above the dielectric layer.

8. The method according to claim 7 , wherein a material of the layer of material above the dielectric layer is chosen from: a material comprising carbon, silicon dioxide (SiO 2 ), and a material containing germanium.

9. The method according to claim 1 , wherein the partial etching of the superficial layer is an etching carried out using a plasma, and wherein the partial etching of the superficial layer is another anisotropic etching configured so as to attack the superficial layer at the peripheral region while substantially not attacking the superficial layer at the gate.

10. The method according to claim 9 , wherein the another anisotropic etching is carried out with an argon or carbon tetrafluoride plasma in which an energy of ions in the plasma is between 8 eV and 13 eV.

11. The method according to claim 9 , wherein the selective etching of the dielectric layer is carried out using a plasma.

12. The method according to claim 11 , wherein the another anisotropic etching and then the selective etching of the dielectric layer are carried out in the same reactor.

13. The method according to claim 1 , wherein the selective etching of the dielectric layer is carried out by wet method.

14. The method according to claim 1 , wherein the selective etching of the dielectric layer is configured so as to partially attack the dielectric layer in a gate foot region situated below the residual part in a direction of the flanks of the gate, so as to form a recess.

15. The method according to claim 14 , wherein the recess has a height of between 5 nm and 30 nm.

16. The method according to claim 14 , wherein the recess has a width of between 5 nm and 10 nm and/or a width less than a height of the recess.

17. The method according to claim 1 , wherein the selective etching of the dielectric layer is configured so as to form a straight edge in the dielectric layer across the thickness of said dielectric layer in alignment with the residual part.

18. The method according to claim 1 , wherein a superficial layer of a fully depleted silicon on insulator (FD-SOI) wafer is used as the layer of a semiconductor material.

19. A method for producing a transistor having a gate situated above a layer of semiconductor material, said method comprising the production of spacers according to claim 1 .

20. The method according to claim 19 , further comprising production of source and drain regions with a growth by epitaxy on the layer of semiconductor material.

Assignees

• Commissariat Energie Atomique
• St Microelectronics Sa
• St Microelectronics Crolles 2 Sas

Inventors

• Arvet Christian
• Barnola Sebastien
• Lagrasta Sebastien
• Posseme Nicolas

Classifications

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P14/6522

  introduced into a nitride material, e.g. changing SiN to SiON · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P14/40

  of conductive or resistive materials · CPC title