High electron mobility transistor and method for forming the same
US-12176414-B2 · Dec 24, 2024 · US
High electron mobility transistor having reduced threshold voltage variation and method of manufacturing the same
US9543391B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9543391-B2 |
| Application number | US-201213517815-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 14, 2012 |
| Priority date | Oct 19, 2011 |
| Publication date | Jan 10, 2017 |
| Grant date | Jan 10, 2017 |
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Abstract
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According to example embodiments a transistor includes a channel layer on a substrate, a first channel supply layer on the channel, a depletion layer, a second channel supply layer, source and drain electrodes on the first channel supply layer, and a gate electrode on the depletion layer. The channel includes a 2DEG channel configured to generate a two-dimensional electron gas and a depletion area. The first channel supply layer corresponds to the 2DEG channel and defines an opening that exposes the depletion area. The depletion layer is on the depletion area of the channel layer. The second channel supply layer is between the depletion layer and the depletion area.
First claim
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What is claimed is: 1. A high electron mobility transistor, comprising: a substrate; a channel layer on the substrate, the channel layer being a GaN layer, the channel layer including a 2DEG channel and a depletion area; a first channel supply layer on the channel layer and corresponding to the 2DEG channel, the first channel supply layer defining an opening that exposes the depletion area; a depletion layer on the first channel supply layer and on the depletion area…
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Electricity · mapped topic
- H01L29/2003Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9543391B2 cover?
- According to example embodiments a transistor includes a channel layer on a substrate, a first channel supply layer on the channel, a depletion layer, a second channel supply layer, source and drain electrodes on the first channel supply layer, and a gate electrode on the depletion layer. The channel includes a 2DEG channel configured to generate a two-dimensional electron gas and a depletion a…
- Who is the assignee on this patent?
- Hwang In-Jun, Oh Jae-Joon, Lee Jae-Won, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H01L29/2003. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 10 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).