Heavily doped semiconductor nanoparticles

Patent metadata

Field	Value
Publication number	US-9543385-B2
Application number	US-201213980348-A
Country	US
Kind code	B2
Filing date	Feb 14, 2012
Priority date	Feb 14, 2011
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

Herein, provided are heavily doped colloidal semiconductor nanocrystals and a process for introducing an impurity to semiconductor nanoparticles, providing control of band gap, Fermi energy and presence of charge carriers. The method is demonstrated using InAs colloidal nanocrystals, which are initially undoped, and are metal-doped (Cu, Ag, Au) by adding a metal salt solution.

First claim

The invention claimed is:

1. A nanoparticle comprising
a semiconductor material, the semiconductor material being doped with at least two atoms of a dopant material, wherein
the at least two atoms of the dopant material are heterovalent to atoms of the semiconductor material, said at least two atoms of the dopant material being dispersed within the semiconductor material, and
the nanoparticle is free of dopant islands within the nanoparticle and free of dopant islands on the surface of the nanoparticle.

2. A nanoparticle according to claim 1 , wherein said at least two atoms of the dopant material alter the density of states of the semiconductor material.

3. The nanoparticle according to claim 1 , wherein the nanoparticle consists of the semiconductor material doped with at least two atoms of the dopant material.

4. The nanoparticle according to claim 1 , wherein an average length or diameter of the nanoparticle is in the range of 1 nm to 500 nm.

5. The nanoparticle according to claim 1 , wherein the semiconductor material is selected from the group of elements consisting of Group I-VII, Group II-VI, Group III-V, Group IV-VI, Group III-VI, and Group IV semiconductors and combinations thereof.

6. The nanoparticle according to claim 5 , wherein the semiconductor material is a Group I-VII material being selected from the group consisting of CuCl, CuBr, CuI, AgCl, AgBr, and AgI, or the semiconductor material is a Group II-VI material selected from the group consisting of CdSe, CdS, CdTe, ZnSe, ZnS, ZnTe, HgS, HgSe, HgTe, CdZnSe, ZnO and any combination thereof, or the semiconductor is a Group III-V material being selected from the group consisting of InAs, InP, InN, GaN, InSb, InAsP, InGaAs, GaAs, GaP, GaSb, AlP, AlN, AlAs, AlSb, CdSeTe, ZnCdSe and any combination thereof, or the semiconductor material is a Group IV-VI material being selected from the group consisting of PbSe, PbTe, PbS, PbSnTe, Tl 2 SnTe 5 and any combination thereof, or the semiconductor material comprises an element of Group IV being selected from the group consisting of Si and Ge.

7. The nanoparticle according to claim 5 , wherein the semiconductor material is selected from CdSe, CdS, CdTe, ZnSe, ZnS, ZnTe, HgS, HgSe, HgTe, CdZnSe, InAs, InP, InN, GaN, InSb, InAsP, InGaAs, GaAs, GaP, GaSb, AlP, AlN, AlAs, AlSb, CdSeTe, ZnCdSe, PbSe, PbTe, PbS, PbSnTe, Tl 2 SnTe 5 , RuS 2 , RuO 2 , MoS 2 , MoO 3 , RhS 2 , RuO 4 , WS 2 , WO 2 , Cu 2 S, Cu 2 Se, Cu 2 Te, CuInS 2 , CuInSe 2 , CuInTe 2 and any combination thereof.

8. The nanoparticle according to claim 7 , wherein the semiconductor material is selected from InAs, InP, InN, GaN, InSb, InAsP, InGaAs, GaAs, GaP, GaSb, AlP, AlN, AlAs, AlSb, CdSeTe, ZnCdSe and any combination thereof.

9. The nanoparticle according to claim 8 , wherein the semiconductor material is selected from InAs, GaAs, GaP, GaSb, InP, InSb, AlAs, AlP, AlSb and InGaAs.

10. The nanoparticle according to claim 9 , wherein the semiconductor material is InAs.

11. The nanoparticle according to claim 1 , wherein the dopant material is selected from the group consisting of materials which atoms differ from atoms composing the semiconductor material by one or more valance electron(s).

12. The nanoparticle according to claim 11 , wherein the dopant material is selected amongst metals and non-metal materials, said dopant being Li or Mg or Na or K or Rb or Cs or Be or Ca or Sr or Ba or Sc or Ti or V or Cr or Fe or Ni or Cu or Zn or Y or La or Zr or Nb or Tc or Ru or Mo or Rh or W or Au or Pt or Pd or Ag or Co or Cd or Hf or Ta or Re or Os or Ir or Hg or B or Al or Ga or In or Tl or C or Si or Ge or Sn or Pb or P or As or Sb or Bi or O or S or Se or Te or Po or F or Cl or Br or I or At, or any combination thereof.

13. The nanoparticle according to claim 12 , wherein the dopant is selected from Ag and Cu.

14. The nanoparticle according to claim 1 , wherein the nanoparticle material is InAs and said dopant is selected from Ag and Cu.

15. The nanoparticle according to claim 1 , wherein the number of dopant atoms dispersed in the nanoparticle ranges from 1×10 18 atoms per cm 3 to 1×10 23 atoms per cm 3 .

16. The nanoparticle according to claim 1 , wherein the number of dopant atoms per nanoparticle is between 2 to 500.

17. The nanoparticle according to claim 1 , wherein the nanoparticle is
a n-doped material having negative charge carriers, or
a p-doped material having positive charge carriers.

18. A device comprising a nanoparticle according to claim 1 , wherein the nanoparticle is incorporated into a layer and/or a region of the device.

19. The device according to claim 18 , wherein the device is a bipolar transistor in a form selected from n-p-n, p-n-p and n-i-p type transistor.

20. The device according to claim 18 , wherein the device is selected from a diode; a transistor; an electronic circuit component; an integrated circuit; a detector; a switch; an amplifier; a transducer; a laser; a tag; a biological tag; a photoconductor; a photodiode; a photovoltaic cell; a light emitting diode (LED); a light sensor; a display; and a large area display array.

21. A method for manufacturing a doped semiconductor nanoparticle, said method comprising
providing an undoped nanoparticle comprising a semiconductor material, and
contacting said undoped nanoparticle with at least one doping material under conditions permitting dispersion of at least two atoms of said doping material within said semiconductor material to form a doped semiconductor nanoparticle that is doped with at least two atoms of a dopant material, wherein
said at least two atoms of the dopant material are heterovalent to atoms of said semiconductor material, and
the doped semiconductor nanoparticle is free of dopant islands within the doped semiconductor nanoparticle and free of dopant islands on the surface of the doped semiconductor nanoparticle.

Assignees

• Cohen Guy
• Millo Oded
• Mocatta David
• Rabani Eran
• Banin Uri
• Yissum Res Dev Co
• Ramot At Tel-Aviv Univ Ltd

Inventors

• Cohen Guy
• Millo Oded
• Mocatta David
• Rabani Eran
• Banin Uri

Classifications

• H10P32/00

  Diffusion of dopants within, into or out of wafers, substrates or parts of devices (during formation of materials H10P14/00) · CPC title

• H10P14/3461

  Nanoparticles · CPC title

• H01L29/0665 Primary

  Electricity · mapped topic

• H01L33/18

  Electricity · mapped topic

• C09K11/64

  containing aluminium · CPC title