FinFET with improved SEU performance

Patent metadata

Field	Value
Publication number	US-9543382-B1
Application number	US-201514663237-A
Country	US
Kind code	B1
Filing date	Mar 19, 2015
Priority date	Mar 19, 2015
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

Illustratively, a finFET comprises at least one fin, and typically several fins, with a trapping region in or on a substrate at the base of each fin to trap ions produced by radiation incident on the substrate. In one embodiment, the trapping region is an implanted region having a conductivity type opposite that of the substrate. In another, the trapping region is a defect region. In another, the trapping region is an epitaxial region grown on the substrate. The finFET is formed by forming the fin or fins and then forming the trapping region at the base of the fin. Illustratively, the trapping region is formed by implanting in the substrate ions having a conductivity type opposite that of the substrate or by creating defects in the substrate or by epitaxially growing a region or regions having an opposite conductivity type to that of the substrate.

First claim

What is claimed is:

1. A finFET comprising:
a substrate of semiconductor material having a first conductivity type;
a plurality of first thin segments of the semiconductor material integral with the substrate and extending in a first direction away from the substrate, each first thin segment extending lengthwise in a second direction with a channel between adjacent thin segments;
a transistor formed on each of at least two adjacent first thin segments, each transistor having source and drain regions and a gate; and
at least one elongated trapping region located in or on the substrate between two adjacent first thin segments, the elongated trapping region having a second conductivity type opposite to the first conductivity type and being coupled to a well region having the second conductivity type.

2. The finFET of claim 1 wherein the at least one trapping region traps ions produced by radiation incident on the substrate.

3. The finFET of claim 1 further comprising a field oxide formed in the channel above the elongated region.

4. The finFET of claim 1 wherein the elongated trapping region is reverse-biased relative to the substrate.

5. The finFET of claim 1 wherein the elongated trapping region is a defect region.

6. The finFET of claim 1 wherein the elongated trapping region is an epitaxial region formed on the substrate.

7. The finFET of claim 1 wherein the elongated trapping region is an epitaxial region formed on the substrate, the epitaxial region having a second conductivity type.

8. A finFET comprising:
a substrate of semiconductor material;
a first well region formed in the substrate and having p-type conductivity;
a plurality of first thin segments of the semiconductor material integral with the first well region and extending in a first direction away from the substrate, each first thin segment extending lengthwise in a second direction with a channel between adjacent first thin segments;
a transistor formed on each of at least two adjacent first thin segments, each transistor having source and drain regions and a gate;
at least one elongated first trapping region located in or on the substrate between two adjacent first thin segments, at least one of the elongated first trapping regions having n-type conductivity and being coupled to a well region having n-type conductivity;
a second well region formed in the substrate and having n-type conductivity;
a plurality of second thin segments of the semiconductor material integral with the second well region and extending in the first direction away from the substrate, each second thin segment extending lengthwise in the second direction with a channel between adjacent second thin segments;
a transistor formed on each of at least two adjacent second thin segments, each transistor having source and drain regions and a gate; and
at least one elongated second trapping region located in or on the substrate between two adjacent second thin segments, at least one of the elongated second trapping regions having p-type conductivity and being coupled to a well region having p-type conductivity.

9. The finFET of claim 8 wherein at least one of the first and second trapping regions traps ions produced by radiation incident on the substrate.

10. The finFET of claim 8 wherein at least one of the elongated first trapping regions has n-type conductivity type and at least one of the elongated second trapping regions has p-type conductivity.

11. The finFET of claim 10 wherein the elongated first and second trapping regions are reverse-biased.

12. The finFET of claim 8 wherein the elongated first and second trapping regions are defect regions.

13. The finFET of claim 8 wherein the elongated first and second trapping regions are epitaxial regions formed on the substrate.

14. A method for forming a finFET comprising:
forming a plurality of first thin semiconductor segments that are integral with a semiconductor substrate having a first conductivity type and are spaced apart by first channels;
forming in or on the substrate at a bottom of at least one first channel a first trapping region, by epitaxially growing on the substrate a region having a second conductivity-type opposite the first conductivity-type; and
forming in at least one first thin segment a transistor having source and drain regions and a gate.

15. The method of claim 14 wherein the first trapping region is formed by implanting ions having a second conductivity-type opposite the first conductivity-type.

16. The method of claim 14 further comprising the step of forming the first trapping region by implanting ions having sufficient energy to destroy some of the crystalline structure of the substrate.

17. The method of claim 14 wherein first thin semiconductor segments are integral with a first well region in the semiconductor substrate, the first well region having p-type conductivity, further comprising:
forming a plurality of second thin semiconductor segments that are integral with a second well region in the semiconductor substrate and are spaced apart by second channels, the second well region having n-type conductivity;
forming in or on the substrate at a bottom of at least one second channel a second trapping region; and
forming in at least one second thin segment a transistor having source and drain regions and a gate.

Assignees

• Altera Corp

Inventors

• Wu Wen
• Xu Yanzhong
• Watt Jeffrey T

Classifications

• H10P30/204

  into Group IV semiconductors · CPC title

• H10P30/21

  of electrically active species · CPC title

• H01L29/0638 Primary

  Electricity · mapped topic

• H01L21/26533

  Electricity · mapped topic

• H01L27/0886

  Electricity · mapped topic