Semiconductor device and manufacturing method thereof, delamination method, and transferring method

Patent metadata

Field	Value
Publication number	US-9543337-B2
Application number	US-201514961043-A
Country	US
Kind code	B2
Filing date	Dec 7, 2015
Priority date	Dec 27, 2002
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.

First claim

What is claimed is:

1. A method for manufacturing a display device comprising the steps of:
forming a metal film comprising a metal over a first substrate;
forming a first insulating film comprising oxygen over the metal film, wherein an oxide layer comprising the metal is formed by oxidation at an interface between the metal film and the first insulating film;
forming a semiconductor element over the first insulating film;
forming a second substrate over the semiconductor element; and
separating the semiconductor element adhered to the second substrate from the first substrate.

2. The method according to claim 1 , wherein the metal film comprises one material selected from Ti, Ta, Mo, Nd, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, and Ir.

3. The method according to claim 1 , further performing a heat treatment at 400° C. or more after forming the oxide layer.

4. The method according to claim 1 , wherein the separation occurs in the oxide layer.

5. The method according to claim 1 , wherein the separation occurs between the oxide layer and the metal film.

6. The method according to claim 1 , further comprising steps of:
transferring the semiconductor element onto a third substrate;
separating the second substrate from the semiconductor element; and
forming a fourth substrate over the semiconductor element after the separation of the second substrate,
wherein the third substrate and the fourth substrate are flexible substrates.

7. The method according to claim 1 , wherein a film thickness of the oxide layer is 0.1 nm to 5 nm.

8. The method according to claim 1 , wherein the oxide layer includes crystals arranged in one direction.

9. The method according to claim 1 , wherein the semiconductor element comprises a semiconductor film.

10. The method according to claim 1 , further forming a second insulating film comprising nitrogen over the first insulating film.

11. A method for manufacturing a display device comprising the steps of:
forming a metal film comprising tungsten over a first substrate;
forming a first insulating film comprising oxygen over the metal film, wherein an oxide layer comprising the tungsten is formed by oxidation at an interface between the metal film and the first insulating film;
forming a semiconductor element over the first insulating film;
forming a second substrate over the semiconductor element; and
separating the semiconductor element adhered to the second substrate from the first substrate.

12. The method according to claim 11 , wherein the separation occurs in the oxide layer.

13. The method according to claim 11 , wherein the separation occurs between the oxide layer and the metal film.

14. A method for manufacturing a display device comprising the steps of:
forming a metal film comprising tungsten over a first substrate;
performing a plasma treatment to form an oxide layer over the metal film;
forming a first insulating film comprising oxygen over the metal film;
forming a semiconductor element over the first insulating film;
forming a second substrate over the semiconductor element; and
separating the semiconductor element adhered to the second substrate from the first substrate.

15. The method according to claim 14 , wherein the separation occurs in the oxide layer.

16. The method according to claim 14 , wherein the separation occurs between the oxide layer and the metal film.

17. A method for manufacturing a display device comprising the steps of:
forming a metal film comprising tungsten over a first substrate;
forming a first insulating film comprising oxygen over the metal film, wherein an oxide layer comprising the tungsten is formed by oxidation at an interface between the metal film and the first insulating film;
performing a heat treatment to increase a proportion of WO 2 in the oxide layer;
forming a semiconductor element over the first insulating film;
forming a second substrate over the semiconductor element; and
separating the semiconductor element adhered to the second substrate from the first substrate.

18. The method according to claim 17 , wherein the separation occurs in the oxide layer.

19. The method according to claim 17 , wherein the separation occurs between the oxide layer and the metal film.

Assignees

• Semiconductor Energy Lab

Inventors

• Maruyama Junya
• Takayama Toru
• Ohno Yumiko
• Yamazaki Shunpei

Classifications

• H10P72/7434

  used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate · CPC title

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10P90/1914 Primary

  using bonding · CPC title

• H01L29/78603

  Electricity · mapped topic

• H01L2221/68368

  Electricity · mapped topic