Method for controlling an RF generator

Patent metadata

Field	Value
Publication number	US-9543122-B2
Application number	US-201615061020-A
Country	US
Kind code	B2
Filing date	Mar 4, 2016
Priority date	May 2, 2014
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

In one embodiment, an RF generator includes an RF amplifier that includes an RF input, a DC input, and an RF output, the RF amplifier configured to receive at the RF input an RF signal from an RF source; receive at the DC input a DC voltage from a DC source; and provide an output power at the RF output; and a control unit operably coupled to the DC source and the RF source, the control unit configured to receive a power setpoint for the RF output; determine a power dissipation at the RF generator; and alter the DC voltage to a final DC voltage that decreases the power dissipation at the RF generator while enabling the output power at the RF output to be substantially equal to the power setpoint.

First claim

What is claimed is:

1. An RF generator comprising:
an RF amplifier comprising an RF input, a DC input, and an RF output, the RF amplifier configured to:
receive at the RF input an RF signal from an RF source;
receive at the DC input a DC voltage from a DC source; and
provide an output power at the RF output; and

a control unit operably coupled to the DC source and the RF source, the control unit configured to:
receive a power setpoint indicative of a desired output power at the RF output;
determine a power dissipation at the RF generator; and
alter the DC voltage to a final DC voltage that decreases the power dissipation at the RF generator while enabling the output power at the RF output to be substantially equal to the power setpoint.

2. The RF generator of claim 1 wherein the control unit is further configured to alter the RF signal.

3. The RF generator of claim 1 wherein the final DC voltage (a) cannot be less than a predetermined minimum DC voltage value and (b) cannot exceed a predetermined maximum DC voltage value.

4. The RF generator of claim 1 wherein the determination of the final DC voltage includes a determination that, at an intermediate DC voltage, the power dissipation is increasing.

5. The RF generator of claim 4 wherein the altering of the DC voltage comprises one of (i) reducing the DC voltage by a predetermined amount and (ii) increasing the DC voltage by the predetermined amount.

6. The RF generator of claim 1 wherein the final DC voltage is substantially a minimum DC voltage at which the output power is substantially equal to the power setpoint.

7. The RF generator of claim 1 wherein the decreased power dissipation is substantially a minimum power dissipation at which the output power is substantially equal to the power setpoint.

8. The RF generator of claim 7 wherein the power dissipation is the power at the RF output minus a power at the DC input and a power reflected back to the RF amplifier.

9. The RF generator of claim 1 wherein the power setpoint is received from a semiconductor processing system.

10. A method of controlling an RF generator, the method comprising:
a) providing an RF amplifier, the RF amplifier comprising a DC input, an RF input, and an RF output, the RF amplifier configured to provide an output power at the RF output;
b) receiving an RF signal to the RF input of the RF amplifier;
c) receiving a DC voltage to the DC input of the RF amplifier;
d) receiving a power setpoint indicative of a desired output power at the RF output;
e) determining a power dissipation at the RF generator; and
f) altering the DC voltage to a final DC voltage that decreases the power dissipation at the RF generator while enabling the output power at the RF output to be substantially equal to the power setpoint.

11. The method of claim 10 wherein the control unit is further configured to alter the RF signal.

12. The method of claim 11 wherein the final DC voltage (a) cannot be less than a predetermined minimum DC voltage value and (b) cannot exceed a predetermined maximum DC voltage value.

13. The method of claim 10 wherein the determination of the final DC voltage includes a determination that, at an intermediate DC voltage, the power dissipation is increasing.

14. The method of claim 10 wherein the altering of the DC voltage comprises one of (i) reducing the DC voltage by a predetermined amount and (ii) increasing the DC voltage by the predetermined amount.

15. The method of claim 10 wherein the final DC voltage is substantially a minimum DC voltage at which the output power is substantially equal to the power setpoint.

16. The method of claim 10 wherein the decreased power dissipation is substantially a minimum power dissipation at which the output power is substantially equal to the power setpoint.

17. The method of claim 16 wherein the power dissipation is the power at the RF output minus a power at the DC input and a power reflected back to the RF amplifier.

18. The method of claim 10 wherein the power setpoint is received from a semiconductor processing system.

19. A method of fabricating a semiconductor comprising:
placing a substrate in a plasma chamber configured to deposit a material layer onto the substrate or etch a material layer from the substrate; and
energizing plasma within the plasma chamber by coupling RF power from an RF source into the plasma chamber to perform a deposition or etching;
wherein the RF power is provided by an RF generator, the RF generator controlled by:
a) providing an RF amplifier, the RF amplifier comprising a DC input, an RF input, and an RF output, the RF amplifier configured to provide an output power at the RF output;
b) providing an RF signal to the RF input of the RF amplifier,
c) providing a DC voltage to the DC input of the RF amplifier;
d) receiving a power setpoint indicative of a desired output power at the RF output;
e) determining a power dissipation at the RF generator; and
f) altering the DC voltage to a final DC voltage that decreases the power dissipation at the RF generator while enabling the output power at the RF output to be substantially equal to the power setpoint.

20. The method of claim 19 wherein:
the final DC voltage cannot be less than a predetermined minimum DC voltage value;
the final DC voltage cannot exceed a predetermined maximum DC voltage value;
the determination of the final DC voltage includes a determination that, at an intermediate DC voltage, the power dissipation is increasing;
the altering of the DC voltage comprises one of (i) reducing the DC voltage by a predetermined amount and (ii) increasing the DC voltage by the predetermined amount; and
the decreased power dissipation is substantially a minimum power dissipation at which the output power is substantially equal to the power setpoint.

Assignees

• Reno Tech Inc

Inventors

• Bhutta Imran Ahmed

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H05H2242/20

  Power circuits · CPC title

• H03F3/195

  in integrated circuits · CPC title