Method and system for preparing a pattern to be printed on a plate or mask by electron beam lithography

US9542505B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9542505-B2
Application numberUS-201313967740-A
CountryUS
Kind codeB2
Filing dateAug 15, 2013
Priority dateAug 24, 2012
Publication dateJan 10, 2017
Grant dateJan 10, 2017

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  1. Title

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  5. First independent claim

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Abstract

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A method for preparing a pattern to be printed on a plate or mask by electron beam lithography comprising the following steps: modelling of the pattern by breaking down this pattern into a set of elementary geometric shapes intended to be printed individually in order to reproduce said pattern and, for each elementary geometric shape of the model; determination of an electrical charge dose to be applied to the electron beam during the individual printing of the elementary shape, this dose being chosen from a discrete set of doses including several non-zero predetermined doses recorded in memory. The set of elementary geometric shapes is a bidimensional paving of identical elementary geometric shapes covering the pattern to be printed. In addition, when the doses to be applied to the elementary geometric shapes are determined, a discretization error correction is made by dithering.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for preparing a pattern for printing on a plate or mask by electron beam lithography, comprising: modelling of the pattern by breaking down the pattern into a set of elementary geometric shapes for individual printing to reproduce said pattern, and recording the modelled pattern as a model in a memory; and determining, for each elementary geometric shape of the set in the model, by a processor accessing the memory, a dose of electrical charges for application to a variable shaped electron beam during the individual printing of said each elementary geometric shape, doses for said each elementary geometric shape of the set in the model being chosen from among a discrete set of doses including several non-zero predetermined doses recorded in the memory, wherein the set of elementary geometric shapes is a bidimensional paving of identical elementary geometric shapes covering the pattern for printing, and wherein, when the doses for application for said each elementary geometric shape of the set in the model are determined, performing a discretisation error correction by dithering. 2. The method for preparing a pattern for printing as claimed in claim 1 , further comprising grouping together adjacent elementary geometric shapes of said each elementary geometric shape of the set in the model that have identical doses in geometric shapes of greater sizes, each for printing in a single exposure to the variable shaped electron beam. 3. The method for preparing a pattern for printing as claimed in claim 1 , further comprising, before the modelling of the pattern, a prior modelling of the pattern by breaking down the pattern into a theoretical set of geometric shapes with different dimensions associated respectively with a set of theoretical doses, and when theoretical doses for application to the bidimensional paving of the set of elementary geometric shapes are determined, executing a prior pixelisation of the theoretical set on the set of elementary geometric shapes to determine initial values of the doses for application for the set of elementary geometric shapes of the set in the model. 4. The method for preparing a pattern for printing as claimed in claim 3 , wherein a discrete set of doses is used during the prior modelling to determine the theoretical doses and is stored in the memory, the discrete set of doses being different than that used during the determination of the doses for application for said each elementary geometric shape of the set in the model, the discrete set comprising fewer discrete dose values. 5. The method for preparing a pattern for printing as claimed in claim 4 , wherein the determining of the doses for application for said each elementary geometric shape of the set in the model comprises comparing the initial values of the doses with the discrete set of predetermined doses recorded in the memory, a selection of doses from the discrete set, and said discretisation error correction by dithering of errors caused by the selection. 6. The method for preparing a pattern for printing as claimed in claim 1 , wherein the discrete set of predetermined doses are defined in the form of an electrical charge density expressed as a number of charges per unit surface. 7. The method for preparing a pattern for printing as claimed in claim 1 , wherein the discretisation error correction by dithering is made from a predetermined error diffusion matrix of a Floyd-Steinberg algorithm. 8. The method for preparing a pattern for printing as claimed in claim 1 , further comprising, when the doses for application for said each elementary geometric shape of the set in the model are determined: using a first discrete set of predetermined doses recorded in the memory, that is a coarse set, for the elementary geometric shapes in the pattern for printing; and using a second discrete set of predetermined doses recorded in the memory, that is a fine set, and comprising more discrete values of doses than the coarse set, for the elementary geometric shapes situated on a contour of the pattern for printing. 9. A non-transitory computer-readable storage medium including at least one computer program stored thereon, which, when executed by a processor associated with the non-transitory computer-readable storage medium, causes said processor to execute a method for preparing a pattern for printing on a plate or mask by electron beam lithography, comprising: modelling of the pattern by breaking down the pattern into a set of elementary geometric shapes for individual printing to reproduce said pattern, and recording the modelled pattern as a model in a memory; and determining, for each elementary geometric shape of the set in the model, by said processor accessing the memory, a dose of electrical charges for application to a variable shaped electron beam during the individual printing of said each elementary geometric shape, doses for said each elementary geometric shape of the set in the model being chosen from among a discrete set of doses including several non-zero predetermined doses recorded in the memory, wherein the set of elementary geometric shapes is a bidimensional paving of identical elementary geometric shapes covering the pattern for printing, and wherein, when the doses for application for said each elementary geometric shape of the set in the model are determined, performing a discretisation error correction by dithering. 10. A system for designing a printed circuit by printing patterns on a plate or mask using electron beam lithography, comprising: a memory configured to store parameters for modelling a pattern by a set of elementary geometric shapes for individual printing to reproduce said pattern; and a processor associated with said memory whereon computer program instructions are further stored, or that comprises integrated circuits, configured to prepare the pattern for printing by: modelling of the pattern by breaking down the pattern into the set of elementary geometric shapes for individual printing to reproduce said pattern, and recording the modelled pattern as a model in the memory; and determining, for each elementary geometric shape of the set in the model, by accessing the memory, a dose of electrical charges for application to a variable shaped electron beam during the individual printing of said each elementary geometric shape, doses for said each elementary geometric shape of the set in the model being chosen from among a discrete set of doses including several non-zero predetermined doses recorded in the memory, wherein the set of elementary geometric shapes is a bidimensional paving of identical elementary geometric shapes covering the pattern for printing, and wherein, when the doses for application for said each elementary geometric shape of the set in the model are determined, performing a discretisation error correction by dithering.

Assignees

Inventors

Classifications

  • Manufacture or treatment of nanostructures · CPC title

  • Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

  • Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging · CPC title

  • Dividing into sub-patterns · CPC title

  • for the production of exposure masks or reticles · CPC title

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What does patent US9542505B2 cover?
A method for preparing a pattern to be printed on a plate or mask by electron beam lithography comprising the following steps: modelling of the pattern by breaking down this pattern into a set of elementary geometric shapes intended to be printed individually in order to reproduce said pattern and, for each elementary geometric shape of the model; determination of an electrical charge dose to b…
Who is the assignee on this patent?
Commissariat A L'Energie Atomique Et Aux Ene Alt, Aselta Nanographics, Commissariat L Energie Atomique Et Aux Energies Alternatives
What technology area does this patent fall under?
Primary CPC classification H01J37/3174. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 10 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).