Method for manufacturing touch screen panel and touch screen panel

Patent metadata

Field	Value
Publication number	US-9542052-B2
Application number	US-201514602303-A
Country	US
Kind code	B2
Filing date	Jan 22, 2015
Priority date	Apr 2, 2014
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

Provided herein is an electrostatic capacitive type window integrated touch screen panel and a method for manufacturing a touch screen panel thereof, the method comprising: forming an oxide metal oxide (OMO) hybrid electrode on a strengthened substrate; and etching the OMO hybrid electrode and forming a pattern, and forming a pattern insertion layer on the pattern, wherein the OMO hybrid electrode is formed by depositing a bottom-layer, metal-layer and top-layer on top of the strengthened substrate, and the pattern insertion layer is formed based on an oxide having a refractive index of a certain range.

First claim

What is claimed is:

1. A method for manufacturing an electrostatic capacitive type window integrated touch screen panel, the method comprising:
forming an oxide metal oxide(OMO) hybrid electrode on a strengthened substrate, wherein the OMO hybrid electrode is formed by depositing a bottom-layer, a metal-layer and a top-layer on top of the strengthened substrate;
etching the bottom-layer, the metal-layer and the top-layer to form a pattern which is an etched portion; and then
depositing a pattern insertion layer in the etched portion, wherein the pattern insertion layer is formed based on an oxide.

2. The method according to claim 1 , further comprising:
forming an inter electrode insulation layer on top of the top-layer and the pattern insertion layer; and
forming a bridge on top of the inter electrode insulation layer and connecting a metal wire to the OMO hybrid electrode.

3. The method according to claim 2 ,
wherein the inter electrode insulation layer is made of inorganic and organic material,
the inorganic and the organic material is selected from the group consisting of SiOx, SiNx, MgF 2 , and SiOxNy, wherein x and y are natural numbers,
the bridge and the metal wire are realized at the same time,
the bridge and the metal wire are made of metal of a same thickness, and
the metal is a single layer and multi metal layer, the metal being selected from the group consisting of Mo, Al, Cu, Cr, Ag, Ti/Cu, Ti/Ag, Cr/Ag, Cr/Cu, Al/Ag, Al/Cu, and Mo/Al/Mo.

4. The method according to claim 2 ,
wherein the refractive index of the pattern insertion layer is at least 1.6 but not more than 2.0,
the pattern insertion layer has a thickness of at least 60 nm but not more than 120 nm, and
the oxide of the pattern insertion layer is selected from the group consisting of MgO, Ta 2 O 3 and SiON.

5. The method according to claim 4 ,
wherein the top-layer has a refractive index of at least 1.8 but not more than 2.2,
the top-layer has a thickness of at least 30 nm but not more than 70 nm, and
the top-layer is made of material selected from the group consisting of indium tin oxide(ITO), indium-zinc oxide(ITO), Al-doped ZnO(AZO), Ga-doped ZnO(GZO), indium-tin-zinc oxide(ITZO), zinc-tin oxide(ZTO), indium-gallium oxide(IGO), SnO 2 and ZnO.

6. The method according to claim 5 ,
wherein the metal-layer has a thickness of at least 5 nm but not more than 10 nm,
the metal-layer is made of Ag or Ag alloy, and
the Ag alloy is selected from the group consisting of Ag—Al, Ag—Mo, Ag—Au, Ag—Pd, Ag—Ti, Ag—Cu, Ag—Au—Pd, and Ag—Au—Cu.

7. The method according to claim 6 ,
wherein the bottom-layer has a refractive index of at least 2.0 but not more than 2.7,
the bottom-layer has a thickness of at least 20 nm but not more than 60 nm, and
the bottom-layer is at least one selected from the group consisting of TiO 2 , Nb 2 O 5 , ZnO, ZrO 2 , and HfO 2 .

8. The method according to claim 1 ,
wherein the top-layer has a refractive index of at least 1.8 but not more than 2.2.

9. The method according to claim 1 ,
wherein the bottom-layer has a refractive index of at least 2.0 but not more than 2.7.

10. An electrostatic capacitive type window integrated touch screen panel, the touch screen panel comprising:
an oxide metal oxide(OMO) hybrid electrode deposited on top of a strengthened substrate, wherein the OMO hybrid electrode is formed by depositing a bottom-layer, a metal-layer and a top-layer on top of the strengthened substrate, and the OMO hybrid electrode includes a pattern which is an etched portion in which the bottom-layer, the metal-layer and the top-layer are etched; and
a pattern insertion layer deposited in the etched portion, wherein the pattern insertion layer is formed on the basis of an oxide.

11. The touch screen panel according to claim 10 , further comprising an inter electrode insulation layer formed on top of the top-layer and the pattern insertion layer;
a bridge formed on top of the inter electrode insulation layer; and
a metal wire connected to the OMO hybrid electrode.

12. The touch screen panel according to claim 10 ,
wherein the inter electrode insulation layer is made of inorganic and organic material, the inorganic and the organic material is selected from the group consisting of SiOx, SiNx, MgF 2 , and SiOxNy, wherein x and y are natural numbers,
the bridge and the metal wire are realized at the same time,
the bridge and the metal wire are made of metal of a same thickness, and
the metal is a single and multi metal layer, the metal being selected from the group consisting of Mo, Al, Cu, Cr, Ag, Ti/Cu, Ti/Ag, Cr/Ag, Cr/Cu, Al/Ag, Al/Cu, and Mo/Al/Mo.

13. The touch screen panel according to claim 10 ,
wherein the pattern insertion layer has a refractive index of at least 1.6 but not more than 2.0,
the pattern insertion layer has a thickness of at least 60 nm but not more than 120 nm, and
the oxide of the pattern insertion layer is selected from the group consisting of MgO, Ta 2 O 3 , and SiON.

14. The touch screen panel according to claim 13 ,
wherein the top-layer has a refractive index of at least 1.8 but not more than 2.2,
the top-layer has a thickness of at least 30 nm but not more than 70 nm, and
the top-layer is made of material selected from the group consisting of indium tin oxide(ITO), indium-zinc oxide(ITO), Al-doped ZnO(AZO), Ga-doped ZnO(GZO), indium-tin-zinc oxide(ITZO), zinc-tin oxide(ZTO), indium-gallium oxide(IGO), SnO 2 and ZnO.

15. The touch screen panel according to claim 14 ,
wherein the metal-layer has a thickness of at least 5 nm but not more than 10 nm,
the metal-layer is made of Ag or Ag alloy, and
the Ag alloy is selected from the group consisting of Ag—Al, Ag—Mo, Ag—Au, Ag—Pd, Ag—Ti, Ag—Cu, Ag—Au—Pd, and Ag—Au—Cu.

16. The touch screen panel according to claim 15 ,
wherein the bottom-layer has a refractive index of at least 2.0 but not more than 2.7,
the bottom-layer has a thickness of at least 20 nm but not more than 60 nm, and
the bottom-layer is one selected from the group consisting of TiO 2 , Nb 2 O 5 , ZnO, ZrO 2 , and HfO 2 .

17. The method according to claim 8 ,
wherein the top-layer has a refractive index of at least 1.8 but not more than 2.2.

18. The method according to claim 10 , wherein the bottom-layer has a refractive index of at least 2.0 but not more than 2.7.

Assignees

• Electronics & Telecommunications Res Inst

Inventors

• Cheong Woo Seok
• Shin Jae Heon
• Park Rae Man
• Kim Kyung Hyun

Classifications

• G06F2203/04111

  Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate · CPC title

• G06F2203/04103

  Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices · CPC title

• G06F2203/04112

  Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material · CPC title

• G06F3/044 Primary

  by capacitive means · CPC title

• G06F3/0443 Primary

  using a single layer of sensing electrodes · CPC title