System and method for compensating temperature gain variation in radiation detectors

Patent metadata

Field	Value
Publication number	US-9541656-B2
Application number	US-201314136667-A
Country	US
Kind code	B2
Filing date	Dec 20, 2013
Priority date	Dec 20, 2013
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

In accordance with the present approach, a dark current is measured for one or more detector elements and used to determine a gain or gain compensation for the respective detector elements. In certain embodiments, the dark current is used to determine a temperature for the respective detector element and the temperature is used to determine the gain or gain compensation. In other embodiments, the dark current is used to calculate the gain or gain compensation for the respective detector element without calculating an intermediate temperature value, such as via the use of a transfer function.

First claim

The invention claimed is:

1. A method for calibrating gain in a radiation detector, comprising the acts of:
measuring a dark current generated by each silicon photomultiplier of an imaging detector comprising an array of silicon photomultipliers;
determining a respective temperature corresponding to each measured dark current of each silicon photomultiplier;
determining a respective bias voltage as a function of the determined respective temperature required to maintain a constant over voltage for each silicon photomultiplier; and
applying the bias voltage to each silicon photomultiplier.

2. The method of claim 1 , wherein each of the silicon photomultipliers comprise microcells, the microcells comprising avalanche photodiodes.

3. The method of claim 1 , wherein the dark current is measured during a period when radiation is not incident on the silicon photomultiplier.

4. The method of claim 1 , wherein the respective temperature is determined by accessing a look up table or solving a formula using the respective measured dark current and a contemporaneous bias voltage applied to the respective silicon photomultiplier.

5. The method of claim 1 , wherein the respective breakdown voltage or breakdown voltage compensation is determined by accessing a look up table or solving a formula using the respective temperature and a contemporaneous bias voltage applied to the respective silicon photomultiplier.

6. The method of claim 1 , wherein the dark current is provided via read out circuitry of each respective silicon photomultiplier.

7. A method for calibrating gain in a radiation detector, comprising the acts of:
measuring a dark current generated by each silicon photomultiplier of an imaging detector comprising an array of silicon photomultipliers;
determining a respective bias voltage as a function of the measured dark current required to maintain a constant over voltage for each silicon photomultiplier; and
applying the bias voltage to each silicon photomultiplier.

8. The method of claim 7 , wherein each of the silicon photomultipliers comprise an array of microcells.

9. The method of claim 8 , wherein the microcells comprise avalanche photodiodes.

10. The method of claim 7 , wherein the dark current is measured during a period when radiation is not incident on the respective silicon photomultiplier.

11. The method of claim 7 , wherein the breakdown voltage or breakdown voltage compensation is determined by accessing a look up table or solving a formula using the respective measured dark current and a contemporaneous bias voltage applied to the respective silicon photomultipliers.

12. The method of claim 11 , wherein the look up table or formula comprise a transfer function that relates temperature, gain, and bias voltage with respect to the silicon photomultipliers.

13. The method of claim 7 , wherein the dark current is provided via read out circuitry of each respective silicon photomultiplier.

14. An imaging system, comprising:
an imaging detector comprising a plurality of silicon photomultipliers, wherein each silicon photomultiplier comprises an array of microcells;
control circuitry configured to apply a bias voltage to the microcells of each silicon photomultiplier, wherein the control circuitry is configured to independently set the bias voltage applied to each silicon photomultiplier so as to maintain a constant over voltage, and wherein the bias voltage needed to obtain the constant over voltage is determined at least in part based on a respective dark current periodically generated by each respective silicon photomultiplier;
image reconstruction and processing circuitry configured to generate images based on output signals acquired from the detector panel; and
at least one image display workstation configured to display the images.

15. The imaging system of claim 14 , wherein the imaging system is configured to:
periodically measure the dark current generated by each silicon photomultiplier;
determine a respective temperature corresponding to the measured dark current;
determine a respective bias voltage as a function of the determined respective temperature required to maintain a constant over voltage for each silicon photomultiplier.

16. The imaging system of claim 15 , wherein the respective temperature is determined by accessing a look up table or solving a formula using the respective measured dark current and a contemporaneous bias voltage applied to the respective silicon photomultiplier.

17. The imaging system of claim 15 , wherein the respective gain or gain compensation is determined by accessing a look up table or solving a formula using the respective temperature and a contemporaneous bias voltage applied to the respective silicon photomultiplier.

18. The imaging system of claim 14 , wherein the imaging system is configured to:
periodically measure the dark current generated by each silicon photomultiplier;
determine a respective bias voltage as a function of the determined respective temperature required to maintain a constant over voltage for each silicon photomultiplier.

19. The imaging system of claim 18 , wherein the respective breakdown voltage or breakdown voltage compensation is determined by accessing a look up table or solving a formula using the respective measured dark current and a contemporaneous bias voltage applied to the respective silicon photomultiplier.

20. A method for determining a change in temperature at a radiation detector, comprising the acts of:
measuring a dark current generated by each silicon photomultiplier of an imaging detector comprising an array of silicon photomultipliers;
determining a ratio of the dark current relative to a calibration dark current; and
determining a temperature difference based on the ratio, wherein the temperature difference corresponds to the difference between the temperature when the calibration dark current was determined and when the dark current was measured.

21. The method of claim 20 , further comprising determining a bias voltage or bias voltage compensation based upon the temperature difference.

22. The method of claim 20 , wherein the temperature difference is determined by accessing a look up table or solving a formula using the respective measured dark current or ratio.

23. The method of claim 20 , wherein the dark current is provided via read out circuitry of each respective silicon photomultiplier.

Assignees

• Gen Electric

Inventors

• Dolinsky Sergei Ivanovich
• Mcdaniel David Leo

Classifications

• G01T1/208

  Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section · CPC title

• G01T7/005 Primary

  calibration techniques (stabilization of spectrometer G01T1/40) · CPC title