Power switch wafer test method

Patent metadata

Field	Value
Publication number	US-9541599-B2
Application number	US-201214009347-A
Country	US
Kind code	B2
Filing date	Feb 17, 2012
Priority date	Apr 4, 2011
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

A wafer test method of a power switch wherein a main IGBT and a current detecting IGBT that detects a current value of the main IGBT are integrally formed on the same semiconductor substrate is such that there is provided resistance means that causes an emitter current of the current detecting IGBT to flow through an emitter terminal of the main IGBT, the main IGBT and current detecting IGBT are energized simultaneously, thereby applying a constant current to a common collector terminal of the main IGBT and current detecting IGBT, and a current ratio (main current/detected current) between a main current of the main IGBT and a detected current of the current detecting IGBT is calculated from the current flowing through the current detecting IGBT, obtained from the voltage across the resistance means, and the constant current.

First claim

The invention claimed is:

1. A power switch wafer test method, being a wafer test method of a power switch having a main IGBT (Insulated Gate Bipolar Transistor) and a current detecting IGBT, of which a collector terminal and gate terminal are connected respectively to a collector terminal and gate terminal of the main IGBT and which detects a current value of the main IGBT, wherein the main IGBT and current detecting IGBT are integrally formed on a same semiconductor substrate,
the power switch wafer test method comprising:
providing resistance means that causes an emitter current of the current detecting IGBT to flow through an emitter terminal of the main IGBT,
energizing the main IGBT and current detecting IGBT simultaneously, thereby applying a constant current to a common collector terminal of the main IGBT and current detecting IGBT, and
calculating a current ratio between a main current of the main IGBT and a detected current of the current detecting IGBT from the current flowing through the current detecting IGBT, obtained from the voltage across the resistance means, and the constant current;
wherein the resistance means is connected between a main IGBT test terminal and a current detecting IGBT test terminal of a wafer test probe card, the main IGBT test terminal and the current detecting IGBT test terminal corresponding to the emitter terminal of the main IGBT and an emitter terminal of the current detecting IGBT.

2. A power switch wafer test method, being a wafer test method of a power switch having a main IGBT and a current detecting IGBT, of which a collector terminal and gate terminal are connected respectively to a collector terminal and gate terminal of the main IGBT and which detects a current value of the main IGBT, wherein the main IGBT and current detecting IGBT are integrally formed on a same semiconductor substrate,
the power switch wafer test method comprising:
providing resistance means that causes an emitter current of the current detecting IGBT to flow through an emitter terminal of the main IGBT,
energizing the main IGBT and current detecting IGBT simultaneously,
detecting a total current of a main current of the main IGBT flowing from the emitter terminal of the main IGBT and a detected current of the current detecting IGBT, the detected current of the current detecting IGBT being detected from a voltage across the resistance means, and
calculating a current ratio between the main current of the main IGBT and the detected current of the current detecting IGBT;
wherein the resistance means is connected between a main IGBT test terminal and a current detecting IGBT test terminal of a wafer test probe card, the main IGBT test terminal and the current detecting IGBT test terminal corresponding to the emitter terminal of the main IGBT and an emitter terminal of the current detecting IGBT.

3. A method, comprising:
using a testing device, applying a constant current to a common collector terminal of a main IGBT and a current-detecting IGBT;
generating a voltage across a resistance provided in the testing device based on the constant current;
determining a current flowing through the current-detecting IGBT based on the voltage and the resistance; and
calculating a ratio of a main current of the main IGBT to a detected current of the current-detecting IGBT based on the constant current and the current determined to be flowing through the current-detecting IGBT;
wherein the applying the constant current comprises using the testing device to energize the main IGBT and the current-detecting IGBT substantially simultaneously; and
wherein the resistance is connected between a main IGBT test terminal and a current detecting IGBT test terminal of the testing device, the main IGBT test terminal and the current detecting IGBT test terminal corresponding to an emitter terminal of the main IGBT and an emitter terminal of the current-detecting IGBT.

4. The method of claim 3 , comprising generating the voltage across the resistance by dividing the constant current applied to the common collector terminal of the main IGBT and the current-detecting IGBT into a current flowing through the main IGBT and a current flowing through the resistance.

5. The method of claim 4 , wherein the calculating the ratio comprises determining a difference between the constant current and the current determined to be flowing through the current-detecting IGBT.

6. The method of claim 5 , wherein the calculating the ratio further comprises determining a value of the difference relative to the current determined to be flowing through the current-detecting IGBT.

Assignees

• Sato Shigeki
• Fuji Electric Co Ltd

Inventors

• Sato Shigeki

Classifications

• H10P74/277

  Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers · CPC title

• H10P74/207

  Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics · CPC title

• G01R31/2608 Primary

  for testing bipolar transistors · CPC title

• H01L22/14

  Electricity · mapped topic

• H01L2924/00

  Electricity · mapped topic