Infrared detector

Patent metadata

Field	Value
Publication number	US-9541453-B2
Application number	US-87635210-A
Country	US
Kind code	B2
Filing date	Sep 7, 2010
Priority date	Jun 25, 2010
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

An infrared detector includes a detecting element, a first electrode, a second electrode, and a covering structure. The detecting element defines an absorbing part and a non-absorbing part. The detecting element includes a first end and a second end opposite with the first end. The first end is disposed in the absorbing part. The second end is disposed in the non-absorbing part. The first electrode is electrically connected with the first end. The second electrode is electrically connected with the second end. The covering structure covers the non-absorbing part. The detecting element further includes a carbon nanotube layer. The carbon nanotube layer includes a plurality of carbon nanotubes disposed uniformly.

First claim

What claimed is:

1. An infrared detector comprising:
a detecting element comprising a carbon nanotube layer divided into an absorbing part and a non-absorbing part, a first end located in the absorbing part, and a second end located in the non-absorbing part, wherein the absorbing part is configured to absorb infrared, and the carbon nanotube layer is a free-standing and continuous structure;
a first electrode electrically connected with the first end;
a second electrode electrically connected with the second end; and
a covering structure covering the non-absorbing part, to prevent the non-absorbing part from absorbing infrared, and exposing the absorbing part; wherein the absorbing part is exposed through a plurality of through holes spaced from each other.

2. The infrared detector of claim 1 , wherein the carbon nanotube layer comprises a plurality of carbon nanotubes disposed uniformly.

3. The infrared detector of claim 2 , wherein the carbon nanotube layer is a pure structure of single-walled carbon nanotubes.

4. The infrared detector of claim 2 , wherein a heat capacity per unit area of the carbon nanotube layer structure is less than or equal to about 2×10 −4 J/cm2*K.

5. The infrared detector of claim 1 , wherein the covering structure is an enclosure defining a hollow space, and the detecting element is disposed in the covering structure.

6. The infrared detector of claim 5 , wherein the absorbing part of the detecting element faces the plurality of through holes.

7. The infrared detector of claim 1 , wherein an area ratio between the absorbing part and the non-absorbing part is in a range from about 1:2 to about 2:1.

8. An infrared detector comprising:
a detecting element divided into an absorbing part and a non-absorbing part, wherein the absorbing part is configured to be exposed to a source of infrared and configured to absorb infrared;
a first electrode electrically connected with the absorbing part;
a second electrode electrically connected with the non-absorbing part;
means for sheltering the non-absorbing part from infrared;
wherein the detecting element comprises a carbon nanotube layer structure, and the carbon nanotube layer is a free-standing and continuous structure, both the absorbing part and the non-absorbing part are part of the carbon nanotube layer; and
a net structure configured to shelter the absorbing part, the net structure defines a plurality of through holes spaced from each other, and the absorbing part is exposed through the plurality of through holes.

9. The infrared detector of claim 8 , wherein the carbon nanotube layer structure is a pure structure of single-walled carbon nanotubes oriented in a substantially same direction and joined end-to-end by Van der Waals attractive force.

10. The infrared detector of claim 8 , wherein the carbon nanotube layer is a planar structure.

11. An infrared detector comprising:
a covering structure, wherein the covering structure defines a hollow space, the covering structure comprises an upper sheet and a lower sheet spaced from each other, the upper sheet defines a light-passing region, and the light-passing region defines a plurality of through holes spaced from each other;
a carbon nanotube layer, wherein the carbon nanotube layer is located on the lower sheet, the carbon nanotube layer is a free-standing and continuous structure and divided into an absorbing part and a non-absorbing part, the absorbing part faces to the light-passing region and configured to absorb infrared through the plurality of through holes, and the non-absorbing part is sheltered by the upper sheet; both the absorbing part and the non-absorbing part are part of the carbon nanotube layer; and
a first electrode and a second electrode spaced from each other, wherein the first electrode and the second electrode are electrically connected to the carbon nanotube layer.

Assignees

• Hu chun-hua
• Liu Chang-Hong
• Fan Shou-Shan
• Univ Tsinghua
• Hon Hai Prec Ind Co Ltd

Inventors

• Hu chun-hua
• Liu Chang-Hong
• Fan Shou-Shan

Classifications

• G01J5/064

  Ambient temperature sensor; Housing temperature sensor; Constructional details thereof · CPC title

• G01J5/02

  Constructional details · CPC title

• H01L35/32

  Electricity · mapped topic

• H01L51/441

  Electricity · mapped topic

• B82Y30/00 Primary

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title