Silicon-based repair methods and composition

Patent metadata

Field	Value
Publication number	US-9540497-B2
Application number	US-201514589021-A
Country	US
Kind code	B2
Filing date	Jan 5, 2015
Priority date	Jan 5, 2015
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

There is set forth herein a silicon-based patch formulation comprising about 25 to 66 percent by volume of a solvent; about 4 to 10 percent by volume of a silicon-comprising binding material; and about 30 to 65 percent by volume of a patching material, the patching material comprising particles having one or more non-actinide Group IIIA elements, wherein a molar ratio of the one or more non-actinide Group IIIA elements to silicon within the patch formulation is about 0.95 to 1.25.

First claim

The invention claimed is:

1. A silicon-based patch formulation comprising:
about 25 to 66 percent by volume of a solvent;
about 4 to 10 percent by volume of a silicon-comprising binding material; and

about 30 to 65 percent by volume of a patching material, the patching material comprising particles having one or more non-actinide Group IIIA elements, wherein a molar ratio of the one or more non-actinide Group IIIA elements to silicon within the silicon-based patch formulation is about 0.95 to 1.25, wherein the particles having one or more non-actinide Group IIIA elements have at least a bimodal particle size distribution, wherein a particle size of a peak of a first distribution is greater than a particle size of a peak of a second distribution.

2. The silicon-based patch formulation of claim 1 , wherein a volume fraction of the first distribution comprises fewer than 80 percent of the patching material and a volume fraction of the second distribution comprises fewer than 80 percent of the patching material, wherein a volume fraction of the first and the second distributions comprises substantially 100% of the patching material.

3. The silicon-based patch formulation of claim 1 , wherein a volume fraction of the first distribution comprises fewer than 60 percent of the patching material and a volume fraction of the second distribution comprises fewer than 60 percent of the patching material, wherein a volume fraction of the first and the second distributions comprises substantially 100% of the patching material.

4. The silicon-based patch formulation of claim 1 , wherein the particle size of the first distribution is within a range of about 10 to 50 μm, and the particle size of the second distribution is within a range of about 0.5 to 10 μm.

5. The silicon-based patch formulation of claim 1 , wherein the particles having one or more non-actinide Group IIIA elements have at least a trimodal particle size distribution, wherein a particle size of a peak of a first distribution is greater than a particle size of a peak of a second distribution, the particle size of the peak of the second distribution is greater than a particle size of a peak of a third distribution.

6. The silicon-based patch formulation of claim 5 , wherein a volume fraction of the first distribution comprises fewer than 80 percent of the patching material, a volume fraction of the second distribution comprises fewer than 50 percent of the patching material, and a volume fraction of the third distribution comprises fewer than 50 percent of the patching material, wherein a volume fraction of the first, the second and the third distributions comprises substantially 100% of the patching material.

7. The silicon-based patch formulation of claim 5 , wherein a volume fraction of the first distribution comprises fewer than 60 percent of the patching material, a volume fraction of the second distribution comprises fewer than 30 percent of the patching material, and a volume fraction of the third distribution comprises fewer than 30 percent of the patching material, wherein a volume fraction of the first, the second and the third distributions comprises substantially 100% of the patching material.

8. The silicon-based patch formulation of claim 4 , wherein the particle size of the first distribution is within a range of about 10 to 50 μm, the particle size of the second distribution is within a range of about 5 to 15 μm, and the particle size of the third distribution is within as range of about 0.5 to 5 μm.

9. The silicon-based patch formulation of claim 1 , wherein the solvent comprises an organic solvent which facilitates dissolution of the silicon-comprising binding, material.

10. The silicon-based patch formulation of claim 9 , wherein the organic solvent is chosen from a group consisting of methanol, ethanol, butanol, propanol, pentanol, hexanol, octanol, nonanol, decanol, dodecanol.

11. The silicon-based patch formulation of claim 1 , wherein the binding material comprises a cross-linked polyorganosiloxane resin.

12. The silicon-based patch formulation of claim 1 , wherein the particles having one or more non-actinide Group IIIA elements comprise one or more rare earth materials selected from a group consisting of a rare earth (RE) monosilicate (RE 2 SiO 5 ) and a rare earth disilicate (RE 2 Si 2 O 7 ), wherein the rare earth material is chosen from a group consisting of non-actinide Group IIIA elements.

13. A silicon-based environmentally resistant patch comprising:
about 2 to 10 percent by volume of a cured silicon-comprising binding material;
about 90 to 98 percent by volume of a cured patching material wherein the cured patching material comprises particles having one or more non-actinide Group IIIA elements; and wherein a molar ratio of the one or more non-actinide Group IIIA elements to silicon within the silicon-based environmentally resistant patch is about 0.95 to 1.25, wherein the particles having one or more non-actinide Group IIIA elements comprise one or more rare earth materials selected from a group consisting of a rare earth (RE) monosilicate (RE 2 SiO 5 ) and a rare earth disilicate (RE 2 Si 2 O 7 ), and wherein the rare earth material is chosen from a group consisting of non-actinide Group IIIA elements.

14. The silicon-based environmentally resistant patch of claim 13 , wherein the particles having one or more non-actinide Group IIIA elements have at least a bimodal particle size distribution, wherein a particle size of a peak of a first distribution is greater than a particle size of a peak of second distribution.

15. The silicon-based environmentally resistant patch of claim 14 , wherein a volume fraction of the first distribution comprises fewer than 60 percent of the cured patching material and the volume fraction of the second distribution comprises fewer than 60 percent of the cured patching material, wherein a volume fraction of the first and the second distributions comprises substantially 100% of the patching material.

16. The silicon-based environmentally resistant patch of claim 14 , wherein the particle size of the first distribution is within a range of about 10 to 50 pin, and the particle size of the second distribution is within a range of about 0.5 to 10 μm.

17. The silicon-based environmentally resistant patch of claim 13 , wherein the particles having one or more non-actinide Group IIIA elements have at least a trimodal particle size distribution, wherein a particle size of a peak of a first distribution is greater than a particle size of a peak of a second distribution, the particle size of the peak of the second distribution is greater than a particle size of a peak of a third distribution.

18. The silicon-based environmentally resistant patch of claim 17 , wherein a volume fraction of the first distribution comprises fewer than 60 percent of the cured patching material, a volume fraction of the second distribution comprises fewer than 30 percent of the cured patching material, and a volume fraction of the third distribution comprises fewer than 30 percent of the cured patching material, wherein a volume fraction of the first, the second and the third distributions comprises substantially 100% of the patching material.

19. The silicon-based environmentally resistant patch of claim 17 , wherein the particle size of the first distribution is within a range of about 10 to 50 μm, the particle size of the second distribution is within a range of about 5 to 15 μm, and the particle size of the third distribution is within a range of about 0.5 to 5 μm.

Assignees

• Gen Electric

Inventors

• Lipkin Don Mark
• Antolino Nicholas Edward
• Poerschke David
• Mcevoy Kevin Paul

Classifications

• C23C24/10

  with intermediate formation of a liquid phase in the layer · CPC title

• C04B41/5024

  Silicates (C04B41/5022 takes precedence; silico-fluorides C04B41/5018) · CPC title

• C04B41/009

  characterised by the material treated · CPC title

• B29K2083/00

  Use of polymers having silicon, with or without sulfur, nitrogen, oxygen, or carbon only, in the main chain, as moulding material · CPC title

• C04B41/00

  After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone (conditioning of the materials prior to shaping C04B40/00; applying liquids or other fluent materials to surfaces, in general B05; grinding or polishing B24; apparatus or processes for treating or working shaped articles of clay or other ceramic compositions, slag or mixtures containing cementitious material B28B11/00; working stone or stone-like materials B28D; glazes, other than cold glazes, C03C8/00; etching, surface-brightening or pickling compositions C09K13/00) · CPC title