Aromatic resins for underlayers

Patent metadata

Field	Value
Publication number	US-9540476-B2
Application number	US-201414569610-A
Country	US
Kind code	B2
Filing date	Dec 12, 2014
Priority date	Dec 12, 2013
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

Polymeric reaction products of certain aromatic alcohols with certain aromatic aldehydes are useful as underlayers in semiconductor manufacturing processes.

First claim

What is claimed is:

1. A reaction product formed from a combination comprising one or more first monomers of the formula

wherein Y is selected from H, C 1 -C 30 alkyl, C 2 -C 30 alkenyl, C 7 -C 30 aralkyl, C 6 -C 30 aryl, substituted C 6 -C 30 aryl, —C 1 -C 30 alkylene-OR 1 , and —C 1 -C 30 alkylidene-OR 1 ; each R is independently selected from C 1 -C 30 alkyl, C 2 -C 30 alkenyl, C 7 -C 30 aralkyl, C 6 -C 30 aryl, substituted C 6 -C 30 aryl, —OR 1 , —C 1 -C 30 alkylene-OR 1 , and —C 1 -C 30 alkylidene-OR 1 ; R 1 is selected from H, C 1 -C 30 alkyl, C 6 -C 30 aryl, substituted C 6 -C 30 aryl, and C 7 -C 30 aralkyl; and n is an integer selected from 0 to 7; and one or more second monomers of the formula Ar—CHO, where Ar is a C 10 -C 30 aromatic moiety having at least 2 fused aromatic rings, which may optionally be substituted with one or more of C 1 -C 30 alkyl, C 2 -C 30 alkenyl, C 7 -C 30 aralkyl, C 6 -C 30 aryl, substituted C 6 -C 30 aryl, —OR 3 , —C 1 -C 30 alkylene-OR 3 and —C 1 -C 30 alkylidene-OR 3 ; R 3 is selected from H, C 1 -C 30 alkyl, and C 6 -C 30 aryl.

2. The reaction product of claim 1 wherein n=0 to 4.

3. The reaction product of claim 1 wherein each R is independently selected from C 1 -C 20 alkyl, C 2 -C 20 alkenyl, C 7 -C 30 aralkyl, C 6 -C 30 aryl, substituted C 6 -C 30 aryl, —OR 1 , —C 1 -C 12 alkylene-OR 1 , and —C 1 -C 20 alkylidene-OR 1 .

4. The reaction product of claim 1 wherein second monomer is substituted with one or more hydroxyls.

5. The reaction product of claim 1 wherein Ar is a C 10 -C 30 aromatic moiety having 2 to 5 fused aromatic rings.

6. A process for preparing a reaction product comprising reacting one or more first monomers of the formula

wherein Y is selected from H, C 1 -C 30 alkyl, C 2 -C 30 alkenyl, C 7 -C 30 aralkyl, C 6 -C 30 aryl, substituted C 6 -C 30 aryl, —C 1 -C 30 alkylene-OR 1 , and —C 1 -C 30 alkylidene-OR 1 ; each R is independently selected from C 1 -C 30 alkyl, C 2 -C 30 alkenyl, C 7 -C 30 aralkyl, C 6 -C 30 aryl, substituted C 6 -C 30 aryl, —OR 1 , —C 1 -C 30 alkylene-OR 1 , and —C 1 -C 30 alkylidene-OR 1 ; R 1 is selected from H, C 1 -C 30 alkyl, C 6 -C 30 aryl, substituted C 6 -C 30 aryl, and C 7 -C 30 aralkyl; and n is an integer selected from 0 to 7; with one or more second monomers of the formula Ar—CHO, where Ar is a C 10 -C 30 aromatic moiety having at least 2 fused aromatic rings, which may optionally be substituted with one or more of C 1 -C 30 alkyl, C 2 -C 30 alkenyl, C 7 -C 30 aralkyl, C 6 -C 30 aryl, substituted C 6 -C 30 aryl, —OR 3 , —C 1 -C 30 alkylene-OR 3 and —C 1 -C 30 alkylidene-OR 3 ; R 3 is selected from H, C 1 -C 30 alkyl, and C 6 -C 30 aryl in the presence of an acid, and optionally in a solvent.

7. The process of claim 6 wherein the solvent is polar.

8. The process of claim 6 wherein the acid is selected from dicarboxylic acids, mineral acids and sulfonic acids.

9. A polymeric reaction product produced by the process of claim 6 .

10. A composition comprising the reaction product of claim 1 , organic solvent, and optionally one or more additives chosen from curing agents, crosslinking agents, and surfactants.

11. A process of forming a patterned layer comprising disposing a layer of the composition of claim 10 on a substrate; removing organic solvent to form a reaction product layer; disposing a layer of a photoresist on the reaction product layer; exposing the photoresist layer to actinic radiation through a mask; developing the exposed photoresist layer to form a resist pattern; and transferring the pattern to the reaction product layer to expose portions of the substrate.

12. The process of claim 11 further comprising the steps of patterning the substrate; and then removing the patterned reaction product layer.

13. The process of claim 11 further comprising the steps of disposing a conformal silicon-containing layer over the patterned reaction product layer and exposed portions of the substrate; partially etching the silicon-containing layer to expose a top surface of the patterned polymeric reaction product layer and a portion of the substrate.

Assignees

• Rohm & Haas Elect Mat
• Rohm & Haas Elect Materials Korea Ltd

Inventors

• Cui Li
• Cho Sung Wook
• Li Mingqi
• Yamada Shintaro
• Trefonas Iii Peter
• Auger Robert L

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• G03F7/094

  Multilayer resist systems, e.g. planarising layers · CPC title

• G03F7/091 Primary

  characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement · CPC title

• C08G8/04 Primary

  of aldehydes · CPC title