Optoelectronic device

Patent metadata

Field	Value
Publication number	US-9538609-B2
Application number	US-201113637438-A
Country	US
Kind code	B2
Filing date	Mar 30, 2011
Priority date	Mar 31, 2010
Publication date	Jan 3, 2017
Grant date	Jan 3, 2017

Abstract

An optoelectronic device that radiates mixed light including a first semiconductor light source which radiates light in a first wavelength range at a first intensity, a second semiconductor light source which radiates light in a second wavelength range at a second intensity, a third semiconductor light source which radiates light in a third wavelength range at a third intensity, a resistance element having a temperature-dependent electrical resistance, and a semiconductor light source control element that controls the intensity of the third semiconductor light source.

First claim

The invention claimed is:

1. An optoelectronic device that radiates mixed light comprising:
a first semiconductor light source having a first light-emitting diode which, in operation, radiates light in a first wavelength range at a first intensity, the first wavelength range and/or the first intensity having a first temperature dependency;
a second semiconductor light source having a second light-emitting diode which, in operation, radiates light in a second wavelength range at a second intensity, the first and the second wavelength ranges being different from one another and the second wavelength range and/or the second intensity having a second temperature dependency which is different from the first temperature dependency;
a third semiconductor light source having a third light-emitting diode which, in operation, radiates light in a third wavelength range at a third intensity;
a resistance element having a temperature-dependent electrical resistance, and
only one semiconductor light source control element, wherein the only one semiconductor light source control element only controls the intensity of the third semiconductor light source;
wherein a parallel circuit is formed with a first series circuit having the resistance element and the first semiconductor light source in a first branch of the parallel circuit, the second semiconductor light source in a second branch of the parallel circuit and a second series circuit having the third semiconductor light source and the only one semiconductor light source control element in a third branch of the parallel circuit, and wherein the first, second and third branches are connected to a common connection point for each of both sides of the parallel circuit, and the only one semiconductor light source control element is not situated in the first or second branches of the circuit.

2. The device according to claim 1 , wherein
the first temperature dependency is less than the second temperature dependency, and
the resistance element is a resistance element having a positive temperature coefficient.

3. The device according to claim 2 , wherein the semiconductor light source control element in a first state blocks flow of current through the third branch and in a second state allows flow of current through the third branch.

4. The device according to claim 1 , wherein
the first temperature dependency is greater than the second temperature dependency, and
the resistance element is a resistance element having a negative temperature coefficient.

5. The device according to claim 4 , wherein the only one semiconductor light source control element in a first state blocks flow of current through the third branch and in a second state allows flow of current through the third branch.

6. The device according to claim 1 , wherein the only one semiconductor light source control element in a first state blocks flow of current through the third branch and in a second state allows flow of current through the third branch.

7. The device according to claim 6 , which can be switched over discretely between the first and second states.

8. The device according to claim 6 , wherein flow of current through the third branch is continuously changeable.

9. The device according to claim 1 , wherein the semiconductor light source control element comprises a transistor to which a control voltage (Us) can be applied.

10. The device according to claim 9 , wherein the transistor is in the form of an N-channel MOSFET or a P-channel MOSFET.

11. The device according to claim 10 , further comprising a potentiometer to set the control voltage (Us).

12. The device according to claim 10 , further comprising a voltage divider to set the control voltage (Us).

13. The device according to claim 9 , further comprising a potentiometer to set the control voltage (Us).

14. The device according to claim 13 , further comprising a voltage divider to set the control voltage (Us).

15. The device according to claim 9 , further comprising a voltage divider to set the control voltage (Us).

16. The device according to claim 1 , wherein the mixed light is warm white in one of the states and cold white in the other state.

17. The device according to claim 1 , wherein the third semiconductor light source emits blue light.

18. The device according to claim 1 , in the form of a module having connections for application of a supply voltage (U).

19. The device according to claim 18 , comprising a connection for application of a potential for actuating the only one semiconductor light source control element.

20. An optoelectronic device that radiates mixed light comprising:
a first semiconductor light source having a first light-emitting diode which, in operation, radiates light in a first wavelength range at a first intensity, the first wavelength range and/or the first intensity having a first temperature dependency,
a second semiconductor light source having a second light-emitting diode which, in operation, radiates light in a second wavelength range at a second intensity, the first and the second wavelength ranges being different from one another and the second wavelength range and/or the second intensity having a second temperature dependency different from the first temperature dependency,
a third semiconductor light source source having a third light-emitting diode which, in operation, radiates light in a third wavelength range at a third intensity,
a resistance element having a temperature-dependent electrical resistance,
a semiconductor light source control element that controls the intensity of the third semiconductor light source, wherein the semiconductor light source control element is the only semiconductor light source control element, and
a parallel circuit comprising a first series circuit having the resistance element and the first semiconductor light source in a first branch of the parallel circuit, the second semiconductor light source in a second branch of the parallel circuit and a second series circuit having the third semiconductor light source and the semiconductor light source control element in a third branch of the parallel circuit, wherein the semiconductor light source control element is not situated in the first or second branches of the circuit,
wherein the first temperature dependency is less than the second temperature dependency and the resistance element is a resistance element having a positive temperature coefficient or wherein the first temperature dependency is greater than the second temperature dependency and the resistance element is a resistance element having a negative temperature coefficient.

21. An optoelectronic device that radiates mixed light comprising:
a first semiconductor light source having a first light-emitting diode which, in operation, radiates light in a first wavelength range at a first intensity, the first wavelength range and/or the first intensity having a first temperature dependency,
a second semiconductor light source having a second light-emitting diode which, in operation, radiates light in a second wavelength range at a second intensity, the first and the second wavelength ranges being different from one another and the second wavelength range and/or the second intensity having a second temperature dependency different from the first temperature dependency,
a third semiconductor light source having a third light-emitting diode which, in operation, radiates light in a third wavelength range at a third intensity,
a resistance element

Assignees

• Varga Horst
• Wirth Ralph
• Osram Opto Semiconductors Gmbh

Inventors

• Varga Horst
• Wirth Ralph

Classifications

• H05B45/20

  Controlling the colour of the light · CPC title

• H05B47/10 Primary

  Controlling the light source · CPC title

• H05B37/02 Primary

  Electricity · mapped topic

• H05B33/0872

  Electricity · mapped topic

• H05B47/20 Primary

  Responsive to malfunctions or to light source life; for protection · CPC title