Piezoelectric device

Patent metadata

Field	Value
Publication number	US-9537079-B2
Application number	US-201314028621-A
Country	US
Kind code	B2
Filing date	Sep 17, 2013
Priority date	Mar 22, 2011
Publication date	Jan 3, 2017
Grant date	Jan 3, 2017

Abstract

In a method of manufacturing a piezoelectric device, among a +C plane on a +Z axis side of a piezoelectric thin film and a −C plane on a −Z axis side of the piezoelectric thin film, the −C plane on the −Z axis side of the piezoelectric thin film is etched. Thus, −Z planes of the piezoelectric thin film on which epitaxial growth is possible are exposed. Ti is epitaxially grown on the −Z planes of the piezoelectric thin film in the −Z axis direction such that the crystal growth plane thereof is parallel to the −Z planes of the piezoelectric thin film. Al is then epitaxially grown on the surface of the Ti electrode in the −Z axis direction such that the crystal growth plane thereof is parallel to the −Z planes of the piezoelectric thin film.

First claim

What is claimed is:

1. A piezoelectric device comprising:
a support;
a piezoelectric thin film located on or over the support, the piezoelectric thin film being polarized along a +Z axis and a −Z axis that are crystal axes and having a +C plane and a −C plane, the +C plane being a first main surface on a side of the +Z axis of the piezoelectric thin film, and the −C plane being a second main surface on a side of the −Z axis of the piezoelectric thin film;
an electrode located on a side of the −C plane of the piezoelectric thin film, the electrode including a crystal plane parallel to the crystal plane of the piezoelectric thin film; and
a stepped structure located on the side of the −C plane of the piezoelectric thin film.

2. The piezoelectric device according to claim 1 , further comprising a dielectric film between the support and the piezoelectric thin film.

3. The piezoelectric device according to claim 1 , wherein the electrode material is aluminum or an aluminum-based material.

4. The piezoelectric device according to claim 2 , wherein the electrode material is aluminum or an aluminum-based material.

5. The piezoelectric device according to claim 3 , wherein the electrode is arranged on the crystal plane of the piezoelectric thin film such that a (111) crystal plane of the aluminum is parallel to the crystal plane of the piezoelectric thin film.

6. The piezoelectric device according to claim 4 , wherein the electrode is arranged on the crystal plane of the piezoelectric thin film such that a (111) crystal plane of the aluminum is parallel to the crystal plane of the piezoelectric thin film.

7. The piezoelectric device according to claim 1 , wherein the piezoelectric thin film comprises single-crystal lithium niobate or single-crystal lithium tantalate.

8. The piezoelectric device according to claim 2 , wherein the piezoelectric thin film comprises single-crystal lithium niobate or single-crystal lithium tantalate.

9. The piezoelectric device according to claim 3 , wherein the piezoelectric thin film comprises single-crystal lithium niobate or single-crystal lithium tantalate.

10. The piezoelectric device according to claim 5 , wherein the piezoelectric thin film comprises single-crystal lithium niobate or single-crystal lithium tantalate.

Assignees

• Murata Manufacturing Co

Inventors

• Ito Korekiyo
• Iwamoto Takashi

Classifications

• H10W72/012

  of bump connectors, dummy bumps or thermal bumps · CPC title

• H03H9/02929

  of ageing changes of characteristics, e.g. electro-acousto-migration · CPC title

• H03H9/02574

  of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate · CPC title

• H03H3/08 Primary

  for the manufacture of resonators or networks using surface acoustic waves · CPC title

• H03H9/14538

  Formation · CPC title