Semiconductor light emitting device package

Patent metadata

Field	Value
Publication number	US-9537060-B2
Application number	US-201414154902-A
Country	US
Kind code	B2
Filing date	Jan 14, 2014
Priority date	Mar 15, 2013
Publication date	Jan 3, 2017
Grant date	Jan 3, 2017

Abstract

A semiconductor light emitting device package includes: a light emitting device; a wavelength conversion unit formed in a path of light emitted from the light emitting device and including a mixture of a wavelength conversion material and a glass material; and a reflective film disposed on an upper surface of the wavelength conversion unit and reflecting a partial amount of light emitted from the light emitting device and allowing a partial amount of light emitted from the light emitting device to be transmitted therethrough.

First claim

What is claimed is:

1. A semiconductor light emitting device package comprising:
a light emitting device;
a first wavelength conversion unit positioned on a path along which light generated by the light emitting device travels and configured as a sintered body of a mixture including a first wavelength conversion material and a first glass material;
a first wavelength selective optical filter disposed on a first surface of the wavelength conversion unit, allowing one of light generated by the light emitting device and light having a wavelength converted by the first wavelength conversion material to be transmitted therethrough and reflecting the other of the light generated by the light emitting device and the light having the wavelength converted by the first wavelength conversion material;
a second wavelength conversion unit positioned above the first wavelength conversion unit on the path along which the light generated by the light emitting device travels and configured as a sintered body of a mixture containing a second wavelength conversion material and a second glass material; and
a second wavelength selective optical filter disposed on a lower surface of the second wavelength conversion unit, allowing light generated by the light emitting device to be transmitted therethrough and reflecting light having a second wavelength converted by the second wavelength conversion material,
wherein each of the first and second wavelength selective optical filters allows light generated by the light emitting device to be transmitted therethrough, and wavelengths converted by the first and second wavelength conversion materials of the respective first and second wavelength conversion units positioned thereabove, and
wherein the second wavelength selective optical filter additionally allows light converted by the first wavelength conversion material to be transmitted therethrough.

2. The semiconductor light emitting device package of claim 1 , wherein light generated by the light emitting device is blue light, and the first wavelength conversion material includes a yellow phosphor.

3. The semiconductor light emitting device package of claim 1 , wherein the first wavelength conversion material includes a plurality of phosphors converting light into light having different peak wavelengths.

4. The semiconductor light emitting device package of claim 2 , wherein colors of light emitted from the first wavelength conversion unit are mixed to provide white light.

5. The semiconductor light emitting device package of claim 1 , wherein colors of light emitted from the first and second wavelength conversion units are mixed to provide white light.

6. A semiconductor light emitting device package, comprising:
a light emitting device configured to generate light;
a wavelength conversion unit positioned on a path along which the light generated by the light emitting device travels and formed as a mixture containing a wavelength conversion material and a glass material; and
a wavelength selective optical filter disposed on and contacting a first surface of the wavelength conversion unit, and configured to reflect light incident on the wavelength selective optical filter from one of the light emitting device and the wavelength conversion unit, and to transmit light incident on the wavelength selective optical filter from the other of the light emitting device and the wavelength conversion unit,
wherein the glass material is a glass composition including 30 wt % to 60 wt % of ZnO—BaO, 10 wt % to 30 wt % of B 2 O 3 , 5 wt % to 20 wt % of P 2 O 5 , and including at least one selected from the group consisting of Na 2 O, CaO, K 2 O, and Li 2 O at an amount equal to or less than 20 wt %.

7. The semiconductor light emitting device package of claim 6 wherein:
the wavelength conversion unit is a sintered body positioned between the light emitting device and the filter.

8. The semiconductor light emitting package of claim 6 ,
wherein the wavelength selective optical filter is positioned between the light emitting device and the wavelength conversion unit,
wherein the light generated by the light emitting device is a first light,
wherein light converted by the wavelength conversion light is a second light that when combined with the first light generates a white light, and
wherein the wavelength selective optical filter allows an amount of the first light to pass through, so that light exiting the semiconductor light emitting package is white light.

9. The semiconductor light emitting device package of claim 6 , wherein the wavelength selective optical filter is formed by alternately laminating two types of dielectric layers having different refractive indices.

10. The semiconductor light emitting device package of claim 6 ,
wherein the wavelength selective optical filter is positioned at an upper surface of the wavelength conversion unit, and
wherein the wavelength selective optical filter reflects light generated by the light emitting device and allows light having a wavelength converted by the wavelength conversion material to be transmitted therethrough.

11. The semiconductor light emitting device package of claim 10 ,
wherein the wavelength conversion material includes an orange phosphor, and
wherein the wavelength selective optical filter reflects light having a wavelength band lower than a reference wavelength and allows light having a wavelength band equal to or higher than the reference wavelength to be transmitted therethrough, wherein the reference wavelength is in the range of about 500 nm to about 550 nm.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Yoon Chang Bun
• Kim Sang Hyun
• Park Min Jung
• Oh Jeong Rok
• Yoon Chul Soo

Classifications

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H01L33/504 Primary

  Electricity · mapped topic

• H01L33/507

  Electricity · mapped topic

• H01L33/46

  Electricity · mapped topic

• H01L33/50

  Electricity · mapped topic