Photovoltaic devices including MG-doped semiconductor films

Patent metadata

Field	Value
Publication number	US-9537039-B2
Application number	US-201213685035-A
Country	US
Kind code	B2
Filing date	Nov 26, 2012
Priority date	Jul 24, 2008
Publication date	Jan 3, 2017
Grant date	Jan 3, 2017

Abstract

A photovoltaic cell can include a dopant in contact with a semiconductor layer. The photovoltaic cell can include a transparent conductive layer and a first semiconductor layer in contact with the transparent conductive layer, the first semiconductor layer including magnesium. In certain circumstances, a substrate can be a glass substrate. In other circumstances, a substrate can be a metal layer. The first semiconductor layer can include CdS. The first semiconductor layer can have a thickness of between about 200 or 3000 Angstroms. The first semiconductor layer can include 1-20% magnesium. A method of manufacturing a photovoltaic cell can include providing a transparent conductive layer and depositing a first semiconductor layer in contact with the transparent conductive layer, the first semiconductor layer treated with magnesium.

First claim

What is claimed is:

1. A method of manufacturing a photovoltaic cell comprising:
providing a transparent conductive layer; and
depositing a first semiconductor layer comprising CdS and having a first side that is doped with magnesium, the first semiconductor layer being deposited such that the first side is in direct physical contact with the transparent conductive layer.

2. The method of claim 1 , wherein first semiconductor layer includes 1-20% magnesium.

3. The method of claim 1 , wherein the transparent conductive layer is positioned over a substrate.

4. The method of claim 1 , wherein the transparent conductive layer is positioned over the first semiconductor layer.

5. The method of claim 1 , further comprising a second semiconductor layer in contact with the first semiconductor layer.

6. The method of claim 5 , wherein the second semiconductor layer comprises CdTe.

7. The method of claim 5 , further comprising treating the second semiconductor layer with cadmium chloride.

8. The method of claim 7 , further comprising treating the second semiconductor layer with heat at approximately 380-450 degrees Celsius.

9. A method of manufacturing a photovoltaic cell comprising:
providing a transparent conductive layer over a substrate;
depositing a layer comprising CdS such that a first side of the CdS layer is in direct physical contact with the transparent conductive layer, the first side being doped with magnesium; and
depositing a layer comprising CdTe in contact with the CdS layer.

10. The method of claim 9 , wherein CdS layer includes 1-20% magnesium.

11. The method of claim 9 , wherein the transparent conductive layer is positioned over a substrate.

12. The method of claim 9 , wherein the transparent conductive layer is positioned over the CdS layer.

13. The method of claim 9 , further comprising treating the CdTe layer with cadmium chloride.

14. The method of claim 13 , further comprising treating the CdTe layer with heat at approximately 380-450 degrees Celsius.

15. The method of claim 9 , wherein CdS layer is deposited to a thickness of between about 200 to about 3000 Angstroms.

Assignees

• First Solar Inc

Inventors

• Gupta Akhlesh
• Powell Ricky C
• Eaglesham David

Classifications

• Y02P70/521

  Cross-Sectional Technologies · mapped topic

• H01L31/02963

  Electricity · mapped topic

• H01L31/1828

  Electricity · mapped topic

• H01L31/18 Primary

  Electricity · mapped topic

• H01L31/0296

  Electricity · mapped topic