Method for making a sensor device using a graphene layer

Patent metadata

Field	Value
Publication number	US-9536953-B2
Application number	US-201514745428-A
Country	US
Kind code	B2
Filing date	Jun 20, 2015
Priority date	Sep 6, 2011
Publication date	Jan 3, 2017
Grant date	Jan 3, 2017

Abstract

A graphene layer is generated on a substrate. A plastic material is deposited on the graphene layer to at least partially cover the graphene layer. The substrate is separated into at least two substrate pieces.

First claim

What is claimed is:

1. A sensor device comprising:
a semiconductor chip;
a graphene layer disposed over the semiconductor chip;
electrical contacts coupled to the graphene layer; and
a sensor housing that accommodates the semiconductor chip and the graphene layer, wherein the sensor housing comprises an opening located above the graphene layer.

2. The sensor device of claim 1 , further comprising a plastic material disposed over the graphene layer, wherein the opening exposes the plastic material.

3. The sensor device of claim 2 , wherein the plastic material is partially disposed over the graphene layer.

4. The sensor device of claim 2 , wherein the plastic material comprises polyethylenterephtalate.

5. The sensor device of claim 2 , wherein the plastic material comprises polyvinylidene.

6. The sensor device of claim 2 , further comprising a polymer foil disposed over the plastic material, wherein the polymer foil comprises an opening exposing the plastic material.

7. The sensor device of claim 1 , wherein the sensor housing comprises a molded encapsulating material.

8. The sensor device of claim 1 , wherein the sensor housing is a hollow housing.

9. The sensor device of claim 1 , wherein the opening has lateral dimensions which are equal or smaller than a distance between the electrical contacts.

10. The sensor device of claim 1 , wherein the semiconductor chip comprises an integrated circuit configured to measure an electrical resistance between the electrical contacts coupled to the graphene layer.

11. An arrangement comprising:
a carrier comprising carrier contacts; and
a sensor device comprising:
a semiconductor chip;
a graphene layer disposed over the semiconductor chip;
electrical contacts coupled to the graphene layer; and
a sensor housing that accommodates the semiconductor chip and the graphene layer, wherein the sensor housing comprises an opening located vertically above the graphene layer, and wherein the electrical contacts of the sensor device are electrically connected to the carrier contacts of the carrier.

12. The arrangement of claim 11 , wherein the sensor device further comprises a plastic material disposed over the graphene layer, wherein the opening exposes the plastic material.

13. The arrangement of claim 12 , wherein the plastic material is partially disposed over the graphene layer.

14. The arrangement of claim 11 , wherein the opening has lateral dimensions which are equal or smaller than a distance between the electrical contacts.

15. The arrangement of claim 11 , wherein the carrier is a printed circuit board (PCB).

16. The arrangement of claim 11 , wherein the semiconductor chip comprises an integrated circuit.

17. An arrangement comprising:
a leadframe; and
a sensor device comprising:
a semiconductor chip;
a graphene layer disposed over the semiconductor chip;
electrical contacts coupled to the graphene layer; and

a housing that accommodates the semiconductor chip and the graphene layer, wherein the housing comprises an opening located above the graphene layer, and wherein the electrical contacts of the sensor device are electrically connected to the leadframe.

18. The arrangement of claim 17 , wherein the sensor device further comprises a plastic material disposed over the graphene layer, wherein the opening exposes the plastic material.

19. The arrangement of claim 17 , wherein the electrical contacts of the sensor device are electrically connected to the leadframe via bond wires.

20. The arrangement of claim 17 , wherein the housing further accommodates a portion of the leadframe.

21. The arrangement of claim 17 , wherein the housing comprises a molded encapsulating material.

22. The arrangement of claim 17 , wherein the semiconductor chip comprises an integrated circuit.

23. A leadless package comprising:
a metal chip pad, a first metal contact and a second metal contact disposed in a bottom surface of the leadless package;
a semiconductor chip disposed on the metal chip pad;
a first electrical contact and a second electrical contact disposed at a top surface of the semiconductor chip, wherein the semiconductor chip comprises an integrated circuit configured to measure an empirical parameter between the first electrical contact and the second electrical contact;
a first metal layer connection and a second metal layer connection, wherein the first metal layer connection connects the first electrical contact to the first metal contact, and wherein the second metal layer connection connects the second electrical contact to the second metal contact; and
a graphene layer disposed over the semiconductor chip, wherein the graphene layer connects the first electrical contact and the second electrical contact.

24. The leadless package of claim 23 , further comprising a plastic material disposed over the graphene layer, wherein the plastic material completely covers the graphene layer.

25. The leadless package of claim 24 , wherein the plastic material comprises at least one of a polyethylenterephtalate and polyvinylidene.

26. A sensor device comprising:
an encapsulation body;
a semiconductor chip disposed in the encapsulation body;
a redistribution layer disposed on the semiconductor chip and the encapsulation body, wherein a first trace of the redistribution layer connects a first chip electrical contact to a first contact terminal on a first area of the encapsulation body, and wherein a second trace of the redistribution layer connects a second chip electrical contact to a second contact terminal on a second area of the encapsulation body; and
a graphene layer disposed over the semiconductor chip and connected to a third chip electrical contact and a fourth chip electrical contact, wherein the encapsulation body comprises an opening located above the graphene layer.

27. The sensor device of claim 26 , wherein a plastic material is disposed over the graphene layer, wherein the opening exposes the plastic material.

28. The sensor device of claim 27 , wherein the plastic material completely covers the graphene layer.

29. The sensor device of claim 26 , wherein the opening has lateral dimensions which are equal to or smaller than a distance between the third chip electrical contact and the fourth chip electrical contact.

Assignees

• Infineon Technologies Ag

Inventors

• Elian Klaus
• Ruhl Guenther
• Theuss Horst
• Escher-Poeppel Irmgard

Classifications

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W74/10

  characterised by their shape or disposition · CPC title

• H10W72/0198

  batch processes · CPC title

• H10W72/5363

  the connected ends being wedge-shaped · CPC title

• H10W72/536

  the connected ends being ball-shaped · CPC title