Slurry for chemical mechanical polishing and polishing method for substrate using same

Patent metadata

Field	Value
Publication number	US-9536752-B2
Application number	US-201013508924-A
Country	US
Kind code	B2
Filing date	Nov 8, 2010
Priority date	Nov 11, 2009
Publication date	Jan 3, 2017
Grant date	Jan 3, 2017

Abstract

The present invention provides a slurry for chemical mechanical polishing comprising water-soluble clathrate compound (a), polymer compound (b) having an acidic group optionally in a salt form as a side chain, polishing abrasive grain (c) and water (d), wherein the content of the water-soluble clathrate compound (a) is 0.001 mass %-3 mass % of the total amount of the slurry, the polymer compound (b) has a weight average molecular weight of not less than 1,000 and less than 1,000,000, and the content of the polymer compound (b) is 0.12 mass %-3 mass % of the total amount of the slurry, and a polishing method for substrate using the slurry.

First claim

The invention claimed is:

1. A method of polishing a silicon oxide film on a silicon nitride film on a substrate, comprising relatively moving a substrate and a polishing pad while supplying a slurry suitable for chemical mechanical polishing between the substrate and the polishing pad to polish the silicon oxide film to expose the silicon nitride film, wherein
the slurry comprises water-soluble clathrate compound (a), polymer compound (b) having carboxy group optionally in a salt form as a side chain, an inorganic compound particle (c) and water (d),
the water-soluble clathrate compound (a) is contained in 0.001 mass %-3 mass % of the total amount of the slurry,
the polymer compound (b) has a weight average molecular weight of not less than 1,000 and less than 1,000,000, the polymer compound (b) comprises polymer (b-1) comprising (meth)acrylic acid and/or a salt thereof in a unit amount of not less than 25 mass % in the polymer, and the polymer compound (b) is contained in 0.12 mass %-3 mass % of the total amount of the slurry, and
the inorganic compound particle (c) consists of cerium oxide.

2. The method according to claim 1 , wherein the water-soluble clathrate compound (a) has a weight average molecular weight of 200-1,000,000.

3. The method according to claim 1 , wherein the water-soluble clathrate compound (a) is one or more selected from the group consisting of a cyclic oligosaccharide and a derivative thereof.

4. The method according to claim 3 , wherein water-soluble clathrate compound (a) is one or more selected from the group consisting of α-cyclodextrin, β-cyclodextrin, γ-cyclodextrin, and a derivative thereof.

5. The method according to claim 1 , wherein the polymer compound (b) is one or more selected from the group consisting of polyacrylic acid, a salt of polyacrylic acid with ammonium, a salt of polyacrylic acid with amine, polymethacrylic acid, a salt of polymethacrylic acid with ammonium, and a salt of polymethacrylic acid with amine.

6. The method according to claim 1 , wherein the cerium oxide is a particle having an average particle size of 0.5 nm-1,000 nm.

7. The method according to claim 1 , wherein the slurry has a pH of 3-12.5.

8. The method according to claim 1 , wherein the polymer compound (b) is polymer (b-1) consisting of (meth)acrylic acid and/or a salt thereof.

Assignees

• Takegoshi Minori
• Kato Mitsuru
• Okamoto Chihiro
• Kato Shinya
• Kuraray Co

Inventors

• Takegoshi Minori
• Kato Mitsuru
• Okamoto Chihiro
• Kato Shinya

Classifications

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W10/014

  using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10P95/062 Primary

  involving a dielectric removal step · CPC title

• H10P52/00 Primary

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H01L21/31053 Primary

  Electricity · mapped topic