Plasma reactor with highly symmetrical four-fold gas injection
US-2015371826-A1 · Dec 24, 2015 · US
US9536710B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9536710-B2 |
| Application number | US-201313959801-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 6, 2013 |
| Priority date | Feb 25, 2013 |
| Publication date | Jan 3, 2017 |
| Grant date | Jan 3, 2017 |
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An apparatus for providing processing gases to a process chamber with improved uniformity is disclosed. One embodiment provides a gas delivery assembly. The gas delivery assembly includes a hub, a nozzle, and one or more gas diffusers disposed in the nozzle. The nozzle has a cylindrical body with a side wall and a top surface. A plurality of injection passages are formed inside the nozzle to deliver processing gases into the process chamber via a plurality of outlets disposed in the side wall. The injection passages are configured to direct process gases out of each outlet disposed in the side wall in a direction which is not radially aligned with a centerline of the hub.
Opening claim text (preview).
What is claimed is: 1. A substrate processing system, comprising: a chamber body defining a processing volume, wherein the chamber body comprises a chamber lid having a central opening; a substrate support disposed in the processing volume; and a gas delivery assembly having a hub and a nozzle disposed over the chamber lid, and a portion of the nozzle is positioned in the processing volume through the central opening in the chamber lid, wherein the nozzle comprises: a cylindrical body having a side wall; a top surface having one or more trenches, wherein each trench includes a bottom; and a gas diffuser disposed inside each trench, wherein a plenum is formed between the gas diffuser and the bottom of each trench. 2. The substrate processing system of claim 1 , further comprising a plurality of outlets formed in the side wall of the nozzle. 3. The substrate processing system of claim 2 , further comprising a plurality of inner injection passages and a plurality of outer injection passages formed inside the nozzle. 4. The substrate processing system of claim 1 , wherein one or more trenches are circular. 5. The substrate processing system of claim 4 , wherein each diffuser comprises a plurality of holes. 6. A substrate processing system, comprising: a chamber body defining a processing volume, wherein the chamber body comprises a chamber lid having a central opening; a substrate support disposed in the processing volume; and a gas delivery assembly having a hub and a nozzle disposed over the chamber lid, and a portion of the nozzle is positioned in the processing volume through the central opening in the chamber lid, wherein the nozzle comprises: a cylindrical body having a side wall; a plurality of outlets formed in the side wall; a plurality of inner injection passages and a plurality of outer injection passages formed inside the nozzle; a top surface having one or more trenches; and a gas diffuser disposed inside each trench, wherein the top surface has an inner trench and an outer trench, and each of the outer injection passages extends from an outer inlet disposed at a bottom of the outer trench to a location inside the nozzle that is a distance away from the top surface and each of the inner injection passages extends from an inner inlet disposed at a bottom of the inner trench to a bottom surface of the nozzle. 7. The substrate processing system of claim 6 , wherein each outlet is connected to one of the plurality of the outer injection passages by a connecting passage, wherein the connecting passage is substantially parallel to the bottom surface of the nozzle and is not radially aligned with a centerline of the hub. 8. The substrate processing system of claim 7 , wherein the angle between the connecting passage and the tangent of the cylindrical side wall at the outlet ranges from about 15 degrees to about 60 degrees.
Ducting arrangements from the source of air or other gases to the materials or objects being dried · CPC title
Gas supply means · CPC title
Gas control, e.g. control of the gas flow · CPC title
Mechanical Engineering · mapped topic
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