Prism-coupling systems and methods for characterizing ion-exchanged waveguides with large depth-of-layer

US9534981B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9534981-B2
Application numberUS-201514966642-A
CountryUS
Kind codeB2
Filing dateDec 11, 2015
Priority dateDec 23, 2014
Publication dateJan 3, 2017
Grant dateJan 3, 2017

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Abstract

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Prism-coupling systems and methods for characterizing large depth-of-layer waveguides formed in glass substrates are disclosed. One method includes making a first measurement after a first ion-exchange process that forms a deep region and then performing a second measurement after a second ion-exchange process that forms a shallow region. Light-blocking features are arranged relative to the prism to produce a mode spectrum where the contrast of the mode lines for the strongly coupled low-order modes is improved at the expense of loss of resolution for measuring characteristics of the shallow region. Standard techniques for determining the compressive stress, the depth of layer or the tensile strength of the shallow region are then employed. A second measurement can be made using a near-IR wavelength to measure characteristics of the deeper, first ion-exchange process. Systems and methods of measuring ion-exchanged samples using shape control are also disclosed.

First claim

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What is claimed is: 1. A method of characterizing a double ion-exchanged (DIOX) waveguide formed in a substrate, comprising: performing a first ion-exchange in the glass substrate to form the waveguide, the waveguide having a deep ion-exchange region with a first profile and a depth-of-layer (DOL); capturing a first mode spectrum of the waveguide and determining the DOL from the first mode spectrum; performing a second ion-exchange in the glass substrate to alter the first profile and to define a shallow ion-exchange region with a steep profile; capturing a second mode spectrum of the waveguide by partially blocking a portion of the mode spectrum associated with the deep ion-exchange region to improve the contrast of a portion of the mode spectrum associated with the shallow ion-exchange region; and determining from the improved-contrast second mode spectrum at least one of a compressive stress, a tensile strength, and a surface stress of the waveguide for the shallow ion-exchange region. 2. The method according to claim 1 , wherein capturing the first mode spectrum includes performing a prism-coupling measurement with near-IR light and wherein capturing the second mode spectrum includes performing a prism-coupling measurement with visible light. 3. The method according to claim 1 , wherein the first and second mode spectra are captured using a prism-coupling system and wherein partially blocking of a portion of the mode spectrum includes operably arranged at least one light-blocking feature adjacent a coupling prism of the prism-coupling system. 4. The method according to claim 1 , including operably supporting the substrate on a chuck assembly to define a shape of the substrate when capturing the first mode spectrum and the second mode spectrum. 5. A method of characterizing a double ion-exchanged (DIOX) waveguide formed in a substrate, comprising: performing a first ion-exchange in the glass substrate to define deep ion-exchange region with a shallow profile and a depth-of-layer (DOL) greater than 100 μm; capturing with a prism-coupling system operating at an IR wavelength a first mode spectrum of the waveguide and determining the DOL from the first mode spectrum; performing a second ion-exchange in the glass substrate to define a shallow ion-exchange region with a steep profile; capturing a second mode spectrum of the waveguide by partially blocking a portion of the mode spectrum associated with the deep ion-exchange region to improve the contrast of a portion of the mode spectrum associated with the shallow ion-exchange region while reducing the contrast of the portion of the mode spectrum associated with the deep ion-exchange region; and determining from a low-order-mode portion of the improved-contrast second mode spectrum at least one of a compressive stress, a tensile strength and a surface stress of the waveguide for the shallow ion-exchange region. 6. The method according to claim 5 , including capturing the second mode spectrum using visible light. 7. The method according to claim 6 , wherein the prism-coupling system includes a prism, and wherein the first and second mode spectra are captured without moving the glass substrate relative to the coupling prism. 8. The method according to claim 5 , wherein the prism-coupling system includes a prism with input and output sides, and wherein partially blocking a portion of the mode spectrum is performed by arranging at least one light-blocking feature relative to at least one of the input and output sides of the prism. 9. The method according to claim 5 , wherein the IR wavelength is nominally 850 nm. 10. A measurement system for measuring at least one characteristic of a double ion-exchange (DIOX) waveguide formed in a substrate to include a deep region and a shallow region, wherein the waveguide includes lower-order and higher-order modes that define a mode spectrum, the system comprising: a coupling prism having an input surface, an output surface and a coupling surface, and wherein the coupling surface interfaces with the waveguide at a substrate upper surface, thereby defining a substrate-prism interface; a light source system that emits light that illuminates the substrate-prism interface through the input surface of the prism, thereby forming reflected light that includes mode lines of the mode spectrum, wherein the reflected light exits the output surface of the coupling prism; at least one light-blocking feature arranged relative to the coupling prism and configured to limit the amount of light from the light source that couples into higher-order modes of the waveguide; a photodetector system having a detector and arranged to receive the reflected light from the coupling prism and detect a mode spectrum on the detector, wherein the mode spectrum has a higher resolution for the lower-order modes as compared to if the at least one light-blocking feature was absent; and a controller configured to process the detected a mode spectrum to determine the at least one characteristic of the waveguide, wherein the at least one characteristic includes a surface stress, a compressive stress and a tensile strength of the shallow region. 11. The measurement system according to claim 10 , further including at least one mask arranged on at least one of the prism input and output surfaces, wherein the at least one mask defines a slit aperture having a width in the range from 0.2 mm to 20 mm. 12. The measurement system according to claim 10 , wherein the light source system includes an infrared (IR) light source. 13. The measurement system according to claim 10 , wherein the light-blocking features are configured to be inserted into and removed from an optical path between the light source system and the photodetector system. 14. A measurement system for measuring at least one characteristic of a double ion-exchange (DIOX) waveguide formed in a substrate to include a deep region and a shallow region, wherein the waveguide includes lower-order and higher-order modes that define a mode spectrum, the system comprising: a coupling prism having an input surface, an output surface and a coupling surface, and wherein the coupling surface interfaces with the waveguide at a substrate upper surface, thereby defining a substrate-prism interface; a chuck assembly that operably supports the substrate and defines a shape for the substrate; a light source system that emits light that illuminates the substrate-prism interface through the input surface of the prism, thereby forming reflected light that includes mode lines of the mode spectrum, wherein the reflected light exits the output surface of the coupling prism; a photodetector system having a detector and arranged to receive the reflected light from the coupling prism and detect the a mode spectrum on the detector; and a controller configured to process the detected a mode spectrum to determine the at least one characteristic of the waveguide, wherein the at least one characteristic includes a surface stress, a compressive stress and a tensile strength. 15. The system according to claim 14 , further including at least one light-blocking feature arranged relative to the coupling prism and configured to limit the amount of light from the light source that couples into higher-order modes of the waveguide. 16. The system according to claim 14 , wherein the light from the light source is diffuse and has an IR wavelength. 17. The system according to claim 14 , wherein the light source includes a light-emitting diode and a diffuser, and wherein the light has a wavelength of 850 nm, and

Assignees

Inventors

Classifications

  • utilising prism or grating {(G02B6/293 takes precedence)} · CPC title

  • Prisms · CPC title

  • with measurement of polarization · CPC title

  • Index of thin films · CPC title

  • for measuring depth · CPC title

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What does patent US9534981B2 cover?
Prism-coupling systems and methods for characterizing large depth-of-layer waveguides formed in glass substrates are disclosed. One method includes making a first measurement after a first ion-exchange process that forms a deep region and then performing a second measurement after a second ion-exchange process that forms a shallow region. Light-blocking features are arranged relative to the pri…
Who is the assignee on this patent?
Corning Inc
What technology area does this patent fall under?
Primary CPC classification G01N21/41. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jan 03 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 6 related publications on this page (citations in our corpus or others sharing the same primary CPC).