Electric apparatus
US-9820417-B2 · Nov 14, 2017 · US
US9532475B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9532475-B2 |
| Application number | US-201615016915-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 5, 2016 |
| Priority date | Mar 18, 2013 |
| Publication date | Dec 27, 2016 |
| Grant date | Dec 27, 2016 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A high-frequency module includes a lower base member having a recess part formed in an upper face thereof, and having a base metal part formed on a lower face thereof that is to be grounded, an upper substrate disposed inside the recess part of the lower base member. The high frequency module also includes a semiconductor device and a first ground metal part connected to the base metal part and disposed in the lower base member. The upper substrate has a first through hole formed therethrough at a position where the first ground metal part is situated, and the semiconductor device is placed on the first ground metal part in the first through hole.
Opening claim text (preview).
What is claimed is: 1. A high-frequency module, comprising: a lower base member having a recess part formed in an upper face thereof, and having a base metal part formed on a lower face thereof that is to be grounded; an upper substrate disposed inside the recess part of the lower base member; a semiconductor device; and a first ground metal part connected to the base metal part and disposed in the lower base member, wherein the upper substrate has a first through hole formed therethrough at a position where the first ground metal part is situated, and the semiconductor device is placed on the first ground metal part in the first through hole. 2. The high-frequency module as claimed in claim 1 , wherein the semiconductor device is connected to the first ground metal part, and a second ground metal part connected to the base metal part is disposed in the lower base member, and wherein the upper substrate has a second through hole formed therethrough into which the second ground metal part intrudes, and a ground line formed on an upper face of the upper substrate is connected to the second ground metal part intruding into the second through hole. 3. The high-frequency module as claimed in claim 2 , wherein the second ground metal part has a step part formed thereon, and a ground line formed on a lower face of the upper substrate is connected to the second ground metal part at the step part of the second ground metal part. 4. The high-frequency module as claimed in claim 1 , wherein the first ground metal part has a step part formed thereon, and a ground line formed on a lower face of the upper substrate is connected to the first ground metal part at the step part of the first ground metal part. 5. The high-frequency module as claimed in claim 1 , wherein the first ground metal part and the second ground metal part are made of material containing copper.
Grounding of printed circuits by connection to external grounding means · CPC title
Shields or metal cases · CPC title
Components thermally connected to metal substrates or heat-sinks by insert mounting · CPC title
Metal over component, i.e. metal plate over component mounted on or embedded in PCB · CPC title
Multiple-component heat spreaders; Multi-component heat-conducting support plates; Multi-component non-closed heat-conducting structures · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.