Microwave irradiation apparatus and substrate treatment method

Patent metadata

Field	Value
Publication number	US-9532409-B1
Application number	US-201615059680-A
Country	US
Kind code	B1
Filing date	Mar 3, 2016
Priority date	Sep 24, 2015
Publication date	Dec 27, 2016
Grant date	Dec 27, 2016

Abstract

In accordance with an embodiment, a microwave irradiation apparatus includes a chamber and a polarizing plate. The chamber is configured to accommodate a substrate and is provided with an introduction port to introduce the microwave applied to the substrate from a direction at an angle within a range of ±45 degrees to a direction horizontal to a surface of the substrate. The polarizing plate is installed between the introduction port and the substrate, and selectively transmits a microwave where an amplitude direction of a magnetic field or an electric field is vertical to the surface of the substrate.

First claim

The invention claimed is:

1. A microwave irradiation apparatus comprising:
a chamber which is configured to accommodate a substrate and is provided with an introduction port to introduce the microwave applied to the substrate from a direction at an angle within a range of ±45 degrees to a direction horizontal to a surface of the substrate; and
a polarizing plate which is installed between the introduction port and the substrate, and selectively transmits a microwave where an amplitude direction of a magnetic field or an electric field is vertical to the surface of the substrate.

2. The apparatus of claim 1 ,
wherein the polarizing plate comprises a slit whose longitudinal direction is a direction parallel or vertical to the surface of the substrate.

3. The apparatus of claim 1 ,
wherein the polarizing plate is installed to be rotatable at least every 90° around a center axis in a direction horizontal to an incidence direction of the microwave.

4. The apparatus of claim 1 ,
wherein the polarizing plate is installed to be closer to a side of the introduction port than the middle between the introduction port and the substrate.

5. The apparatus of claim 1 , further comprising a susceptor which holds the substrate and rotates the substrate in a plane horizontal to the surface of the substrate.

6. The apparatus of claim 1 , further comprising a microwave irradiator which generates the microwave and applies the microwave to the substrate through the introduction port.

7. The apparatus of claim 6 , comprising:
the microwave irradiators and
the polarizing plates which are installed between the introduction port and the substrate in correspondence with each of the microwave irradiators,
wherein the chamber is provided with the introduction port in correspondence with each of the microwave irradiators.

8. The apparatus of claim 1 ,
wherein the polarizing plate transmits a microwave in such a manner that, when a microwave where an amplitude direction of a magnetic field is vertical to the surface of the substrate is selectively transmitted, the magnetic field in the amplitude direction vertical to the surface of the substrate is stronger than the magnetic fields in other amplitude directions, and in such a manner that, when a microwave where an amplitude direction of an electric field is vertical to the surface of the substrate is selectively transmitted, the electric field in the amplitude direction vertical to the surface of the substrate is stronger than the electric fields in other amplitude directions.

9. A substrate treatment method, comprising:
introducing a microwave toward a substrate from a direction at an angle within a range of ±45 degrees to a direction horizontal to the surface of the substrate, and
polarizing the microwave in such a manner that an amplitude direction of a magnetic field of the microwave applied to the substrate is vertical to the surface of the substrate.

10. The method of claim 9 , wherein the microwave is polarized by passing through a slit whose longitudinal direction is horizontal to the surface of the substrate.

11. A substrate treatment method, comprising:
introducing a microwave toward a substrate from a direction at an angle within a range of ±45 degrees to a direction horizontal to the surface of the substrate, and
polarizing the microwave in such a manner that an amplitude direction of an electric field of the microwave applied to the substrate is vertical to the surface of the substrate.

12. The method of claim 11 ,
wherein the microwave is polarized by passing through a slit whose longitudinal direction is vertical to the surface of the substrate.

13. The method of claim 11 , wherein the substrate comprises a film which contains carbon (C) and water molecules and is formed on a silicon substrate.

Assignees

• Toshiba Kk

Inventors

• Aoyama Tomonori

Classifications

• H10P72/0436

  mainly by radiation · CPC title

• H10P95/90 Primary

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10D64/01338

  with a treatment, e.g. annealing, after the formation of the conductor · CPC title

• H05B2206/044

  Microwave heating devices provided with two or more magnetrons or microwave sources of other kind · CPC title

• H05B6/708

  in particular slotted waveguides · CPC title