Coulomb counter circuitry
US-12101097-B2 · Sep 24, 2024 · US
US9531398B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9531398-B2 |
| Application number | US-201615042675-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 12, 2016 |
| Priority date | Mar 11, 2015 |
| Publication date | Dec 27, 2016 |
| Grant date | Dec 27, 2016 |
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Aging effects on devices fabricated using deep nanometer complementary metal-oxide semiconductor (CMOS) processes can cause circuits to exhibit an undesirable mismatch buildup over time. To address the aging effects, the connections to an array of M differential circuits are controlled to limit and systematically minimize or reverse the aging effects. In one embodiment, the controlling permutation sequence is selected to stress the array of M differential circuits under opposite stress conditions during at least two different time periods. Imposing opposite stress conditions, preferably substantially equal opposite stress conditions, can reverse the direction of a mismatch buildup and limit the mismatch buildup over time within acceptable limits. The controlling permutation sequence can be applied to an array of comparators of an analog-to-digital converter, or an array of differential amplifiers of a folding analog-to-digital converter.
Opening claim text (preview).
What is claimed is: 1. A method for limiting aging effects on circuitry having an array of circuits, the method comprising: determining stress conditions associated with aging on the array of circuits; determining, based on the stress conditions, a first permutation of selected first ones of the circuits for a first time period and a second permutation of selected second ones of the circuits for a second time period, wherein said first and second permutations limit stress condit…
Physics · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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