Multi-state attenuator

Patent metadata

Field	Value
Publication number	US-9531359-B1
Application number	US-201514878750-A
Country	US
Kind code	B1
Filing date	Oct 8, 2015
Priority date	Oct 8, 2015
Publication date	Dec 27, 2016
Grant date	Dec 27, 2016

Abstract

Multi-state radio frequency (RF) attenuator configurations that include bridged-T type, pi-type, and T-type structures each having a programmable throughput section and a coupled programmable shunt section. The throughput sections and shunt sections may be configured in various combinations of parallel and serial fixed or selectable resistance elements such that multiple resistance states and impedance matching states can be programmatically selected, and may include stacked switch elements to withstand applied voltages to a specified design level.

First claim

What is claimed is:

1. A programmable multi-state attenuator for a radio frequency signal, including:
(a) a throughput section having an input terminal, an output terminal, at least one connection node, and at least two selectable signal attenuation paths coupled between the input terminal and the output terminal, for selectably coupling an applied radio frequency signal from the input terminal to the output terminal through one of the at least two selectable signal attenuation paths to provide a corresponding attenuation state for the applied radio frequency signal; and
(b) a shunt section, coupled between the at least one connection node of the throughput section and a reference voltage, for selectively coupling the at least one connection node to the reference voltage, the shunt section including (1) at least one selectable shunt switch, and (2) at least two series-connected impedance elements coupled in series with a corresponding one of the at least one selectable shunt switch, at least one of the at least two series-connected impedance elements being selectably configurable to provide at least two impedance states for the shunt section, each impedance state corresponding to an attenuation state of the throughput section.

2. The programmable multi-state attenuator of claim 1 , wherein the selectable shunt switch includes two or more concurrently switchable stacked switching elements.

3. The programmable multi-state attenuator of claim 1 , further including a selectable bypass path between the input terminal and the output terminal, for selectably coupling an applied radio frequency signal from the input terminal to the output terminal through the selectable bypass path to provide a through state for the applied radio frequency signal.

4. The programmable multi-state attenuator of claim 2 , wherein the selectable bypass path includes two or more concurrently switchable stacked switching elements.

5. The programmable multi-state attenuator of claim 1 , wherein the throughput section and the shunt section are arranged in a bridged-T type multi-state attenuator configuration.

6. The programmable multi-state attenuator of claim 1 , wherein the throughput section and the shunt section are arranged in a pi-type multi-state attenuator configuration.

7. The programmable multi-state attenuator of claim 1 , wherein the throughput section and the shunt section are arranged in a T-type multi-state attenuator configuration.

8. The programmable multi-state attenuator of claim 1 , wherein the throughput section and the shunt section are arranged in L-pad type multi-state attenuator configuration.

9. The programmable multi-state attenuator of claim 1 , wherein at least one shunt section series-connected impedance element includes at least one bypassable series resistance.

10. The programmable multi-state attenuator of claim 1 , wherein the at least one shunt section series-connected impedance element includes at least one fixed resistance in series with at least one series-connected bypassable resistance.

11. The programmable multi-state attenuator of claim 1 , wherein the at least one shunt section series-connected impedance element includes at least one fixed resistance in series with at least two bypassable parallel resistances.

12. The programmable multi-state attenuator of claim 1 , wherein the at least one shunt section series-connected impedance element includes a programmable matrix of selectable resistance elements.

13. The programmable multi-state attenuator of claim 1 , wherein at least one throughput section selectable signal attenuation path includes at least one selectable series resistance element.

14. The programmable multi-state attenuator of claim 13 , wherein at least one selectable series resistance element includes two or more concurrently switchable stacked switching elements.

15. The programmable multi-state attenuator of claim 1 , wherein at least two throughput section selectable signal attenuation paths are in parallel with each other between the input terminal and the output terminal.

16. The programmable multi-state attenuator of claim 1 , wherein at least one throughput section selectable signal attenuation path includes at least one selectable series resistance element in series with at least one bypassable augmenting resistance element.

17. The programmable multi-state attenuator of claim 1 , wherein at least two throughput section selectable signal attenuation paths are series-connected bypassable resistance elements.

18. The programmable multi-state attenuator of claim 1 , wherein at least two throughput section selectable signal attenuation paths are tiered bypassable series resistances.

19. The programmable multi-state attenuator of claim 1 , wherein at least one throughput section selectable signal attenuation path includes a programmable matrix of selectable resistance element.

20. The programmable multi-state attenuator of claim 1 , wherein the throughput section and the shunt section are selectively configurable to create a multifunctional variable-type multi-state attenuator.

21. The programmable multi-state attenuator of claim 1 , wherein the throughput section and the shunt section are selectively configurable between at least two different multi-state attenuator types selected from the group comprising a bridged-T type, a pi-type, a T-type, and an L-pad type attenuator.

22. The programmable multi-state attenuator of claim 1 , wherein the multi-state attenuator is fabricated as a complementary metal-oxide-semiconductor integrated circuit using a silicon-on-insulator process.

23. A complementary metal-oxide-semiconductor integrated circuit programmable multi-state attenuator for a radio frequency signal, including:
(a) a throughput section having an input terminal, an output terminal, at least one connection node, at least two selectable signal attenuation paths coupled between the input terminal and the output terminal, and a selectable bypass path between the input terminal and the output terminal, for selectably coupling an applied, radio frequency signal from the input terminal to the output terminal through one of the at least two selectable signal attenuation paths or through the selectable bypass path to provide a corresponding attenuation state or through state for the applied radio frequency signal; and
(b) a shunt section, coupled between the at least one connection node of the throughput section and a reference voltage, for selectively coupling the at least one connection node to the reference voltage, the shunt section including (1) at least one selectable shunt switch including two or more concurrently switchable stacked switching elements, and (2) at least two series-connected impedance elements coupled in series with a corresponding one of the at least one selectable shunt switch, at least one of the at least two series-connected impedance elements being selectably configurable to provide at least two impedance states for the shunt section, each impedance state corresponding to an attenuation state of the throughput section.

24. An integrated circuit programmable multi-state bridged-T type attenuator for a radio frequency signal, including:
(a) a throughput section having an input terminal, an output terminal, a first resistance coupled between the input terminal and a connection node, a second resistance coupled between the connection node and the output terminal, at least two selectable signal attenuation p

Assignees

• Peregrine Semiconductor Corp

Inventors

• Shrivastava Ravindranath

Classifications

• H03K17/687

  the devices being field-effect transistors · CPC title

• H03K5/08 Primary

  by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding (H03K5/07 takes precedence; comparing one pulse with another H03K5/22; providing a determined threshold for switching H03K17/30) · CPC title

• H03H11/245 Primary

  using field-effect transistor · CPC title

• H03H7/25

  comprising an element controlled by an electric or magnetic variable (H03H7/27 takes precedence) · CPC title