Amplifiers with a short phase path, packaged RF devices for use therein, and methods of manufacture thereof

Patent metadata

Field	Value
Publication number	US-9531328-B2
Application number	US-201414572136-A
Country	US
Kind code	B2
Filing date	Dec 16, 2014
Priority date	Dec 16, 2014
Publication date	Dec 27, 2016
Grant date	Dec 27, 2016

Abstract

An embodiment of a packaged radio frequency (RF) amplifier device includes a transistor and an inverse class-F circuit configured to harmonically terminate the device. The transistor has a control terminal and first and second current carrying terminals. The control terminal is coupled to an input lead of the device, and the first current carrying terminal is coupled to a voltage reference. The inverse class-F circuit is coupled between the second current carrying terminal and an output lead. The inverse class-F circuit includes a shunt circuit coupled between a cold point node and the voltage reference, where the cold point node corresponds to a second harmonic frequency cold point for the device. The shunt circuit adds a shunt negative susceptance at a fundamental frequency F 0 to the inverse class-F circuit.

First claim

What is claimed is:

1. A packaged radio frequency (RF) amplifier device comprising:
an input lead;
an output lead;
a first transistor that includes a control terminal and first and second current carrying terminals, wherein the control terminal is coupled to the input lead, the first current carrying terminal is coupled to a voltage reference, and the first transistor is characterized by a first drain-source capacitance; and
an inverse class-F circuit coupled between the second current carrying terminal and the output lead and configured to harmonically terminate the RF amplifier device, wherein the inverse class-F circuit includes
a first shunt circuit coupled between a first cold point node and the voltage reference, wherein the first cold point node corresponds to a second harmonic frequency cold point for the RF amplifier device, and wherein the first cold point node is located on a signal path between the second current carrying terminal and the output lead, and the first shunt circuit adds a shunt negative susceptance to the inverse class-F circuit at a fundamental frequency of the RF amplifier device, and
a second shunt circuit coupled between the first cold point node and the voltage reference, wherein the second shunt circuit is resonant at the second harmonic frequency.

2. The packaged RF amplifier device of claim 1 , wherein the first shunt circuit is resonant at a sub-fundamental frequency, which is a frequency that is lower than the fundamental frequency.

3. A packaged radio frequency (RF) amplifier device comprising:
an input lead;
an output lead;
a first transistor that includes a control terminal and first and second current carrying terminals, wherein the control terminal is coupled to the input lead, the first current carrying terminal is coupled to a voltage reference, and the first transistor is characterized by a first drain-source capacitance; and
an inverse class-F circuit coupled between the second current carrying terminal and the output lead and configured to harmonically terminate the RF amplifier device, wherein the inverse class-F circuit includes a first shunt circuit coupled between a first cold point node and the voltage reference, wherein the first cold point node corresponds to a second harmonic frequency cold point for the RF amplifier device, and the first shunt circuit adds a shunt negative susceptance to the inverse class-F circuit, wherein the inverse class-F circuit is configured to raise an impedance at the output lead to an impedance in a range of 5.0 Ohms to 15.0 Ohms when the amplifier device is under impedance modulation operation.

4. The packaged RF amplifier device of claim 1 , wherein the inverse class-F circuit comprises:
a first inductance coupled between the second current carrying terminal and the first cold point node, wherein a value for the first inductance is selected so that the first inductance and the first drain-source capacitance are resonant;
the first shunt circuit, which includes a second inductance and a second capacitance coupled in series, and wherein values for the second inductance and the second capacitance are selected so that the first shunt circuit resonates at a sub-fundamental frequency, which is a frequency that is lower than the fundamental frequency; and
the second shunt circuit, wherein the second shunt circuit includes a third inductance and a third capacitance coupled in series, and wherein values for the third inductance and the third capacitance are selected so that the second shunt circuit is resonant at the second harmonic frequency.

5. A packaged radio frequency (RF) amplifier device comprising:
an input lead;
an output lead;
a first transistor that includes a control terminal and first and second current carrying terminals, wherein the control terminal is coupled to the input lead, the first current carrying terminal is coupled to a voltage reference, and the first transistor is characterized by a first drain-source capacitance; and
an inverse class-F circuit coupled between the second current carrying terminal and the output lead and configured to harmonically terminate the RF amplifier device, wherein the inverse class-F circuit includes
a first inductance coupled between the second current carrying terminal and a first cold point node, wherein a value for the first inductance is selected so that the first inductance and the first drain-source capacitance are resonant, and wherein the first cold point node corresponds to a second harmonic frequency cold point for the RF amplifier device,
a first shunt circuit coupled between the first cold point node and the voltage reference, wherein the first shunt circuit adds a shunt negative susceptance to the inverse class-F circuit, and the first shunt circuit includes a second inductance and a second capacitance coupled in series, and wherein values for the second inductance and the second capacitance are selected so that the first shunt circuit resonates at a sub-fundamental frequency, which is a frequency that is lower than the fundamental frequency,
a second cold point node between the second inductance and the second capacitance, wherein the second cold point node corresponds to a fundamental frequency F 0 cold point for the RF amplifier device, and
a second shunt circuit coupled between the first cold point node and the voltage reference, wherein the second shunt circuit includes a third inductance and a third capacitance coupled in series, and wherein values for the third inductance and the third capacitance are selected so that the second shunt circuit is resonant at the second harmonic frequency.

6. The packaged RF amplifier device of claim 4 , further comprising:
a fourth inductance coupled between the first cold point node and the output lead.

7. The packaged RF amplifier device of claim 4 , wherein the first cold point node is on the output lead.

8. The packaged RF amplifier device of claim 1 , wherein the first transistor is selected from a laterally diffused field effect transistor and a high electron mobility transistor.

9. The packaged RF amplifier device of claim 1 , wherein the first transistor is a high electron mobility transistor that includes a gallium nitride semiconductor substrate.

10. The packaged RF amplifier device of claim 1 , further comprising:
a second input lead;
a second output lead; and
a second transistor that includes a second control terminal and third and fourth current carrying terminals, wherein the second control terminal is coupled to the second input lead, the third current carrying terminal is coupled to the voltage reference, and the fourth current carrying terminal is coupled to the second output lead.

11. The packaged RF amplifier device of claim 10 , wherein:
the first transistor is a carrier amplifier for a Doherty amplifier;
the second transistor is a peaking amplifier for the Doherty amplifier; and
the first and second transistors are asymmetrical.

12. The packaged RF amplifier device of claim 10 , wherein:
the first transistor is a carrier amplifier for a Doherty amplifier;
the second transistor is a peaking amplifier for the Doherty amplifier; and
the first and second transistors are symmetrical.

13. An amplifier comprising:
a first amplifier path that includes
a first amplifier input node,
a first amplifier output node,
a first transistor that includes a control terminal and first and second current carrying terminals, wherein the control terminal is coupled to the first amplifier input node, the first current carrying terminal is coupled to a voltage reference, the second current carrying terminal is coupled to an inverse class-F

Assignees

• Freescale Semiconductor Inc
• Nxp Usa Inc

Inventors

• Frei Jeffrey A
• Krvavac Enver
• Ladhani Hussain H

Classifications

• H10W72/5445

  being orthogonal to a side surface of the chip, e.g. parallel arrangements · CPC title

• H10W44/234

  Arrangements for impedance matching · CPC title

• H10W44/206

  Wires · CPC title

• H10W44/20

  at high-frequency [HF] or radio frequency [RF] · CPC title

• H10W72/0198

  batch processes · CPC title