Method of making an organic thin film transistor

Patent metadata

Field	Value
Publication number	US-9530975-B2
Application number	US-201314430813-A
Country	US
Kind code	B2
Filing date	Sep 24, 2013
Priority date	Sep 24, 2012
Publication date	Dec 27, 2016
Grant date	Dec 27, 2016

Abstract

In one aspect, organic thin film transistors are described herein. In some embodiments, an organic thin film transistor comprises a source terminal, a drain terminal and a gate terminal; a dielectric layer positioned between the gate terminal and the source and drain terminals; and a vibrationally-assisted drop-cast organic film comprising small molecule semiconductor in electrical communication with the source terminal and drain terminal, wherein the transistor has a carrier mobility (μ eff ) of at least about 1 cm 2 /V·s.

First claim

The invention claimed is:

1. A method of making an organic thin film transistor comprising:
providing a source terminal and a drain terminal on a dielectric substrate; and
drop-casting an organic film on surfaces of the source and drain terminals from a solution of small molecule semiconductor, wherein the deposited solution is vibrated during evaporation of solution solvent.

2. The method of claim 1 , wherein the dielectric substrate is also vibrated during evaporation of the solution solvent.

3. The method of claim 1 further comprising providing a gate terminal on a side of the dielectric substrate opposing the source and drain terminals.

4. The method of claim 1 further comprising providing a gate terminal over the organic film, wherein a gate dielectric is provided between the organic film and gate terminal.

5. The method of claim 1 , wherein the solvent is evaporated at a rate ranging from 5 μL/hr to 50 μL/hr.

6. The method of claim 1 , wherein the solvent is evaporated at a rate ranging from 10 μL/hr to 40 μL/hr.

7. The method of claim 1 , wherein the solution is vibrated at a frequency ranging from about 1 Hz to about 5000 Hz.

8. The method of claim 1 , wherein the solution is vibrated at a frequency ranging from about 1 Hz to about 1000 Hz.

9. The method of claim 7 , wherein the vibrations are provided in a lateral plane of the solution.

10. The method of claim 7 , wherein the vibrations are provided outside of a lateral plane of the solution.

11. The method of claim 10 , wherein the vibrations are provided in a plane normal to the lateral plane of the solution.

12. The method of claim 1 further comprising positioning a work function alteration layer on at least one of the source terminal or drain terminal and the organic film.

13. The method of claim 12 , wherein the work function alteration layer is positioned between the source terminal and the organic film and the drain terminal and the organic film.

14. The method of claim 1 further comprising applying an electric field to the deposited solution during vibration and evaporation of the solution solvent.

15. The method of claim 1 further comprising applying an electric field to the deposited solution during evaporation of the solution solvent.

Assignees

• Univ Wake Forest

Inventors

• Jurchescu Oana Diana
• Diemer Peter James

Classifications

• H10K30/50

  Photovoltaic [PV] devices · CPC title

• H10K71/40

  Thermal treatment, e.g. annealing in the presence of a solvent vapour · CPC title

• H01L51/0003

  Electricity · mapped topic

• H01L51/0541

  Electricity · mapped topic

• H01L51/0512 Primary

  Electricity · mapped topic