Conductivity based on selective etch for GaN devices and applications thereof
US-9206524-B2 · Dec 8, 2015 · US
US9530928B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9530928-B2 |
| Application number | US-201314103725-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 11, 2013 |
| Priority date | Nov 25, 1997 |
| Publication date | Dec 27, 2016 |
| Grant date | Dec 27, 2016 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.
Opening claim text (preview).
Having thus described the invention what is claimed is: 1. A method of producing a luminescent semiconductor nanocrystal composition, comprising: providing a semiconductor core comprising a first semiconductor material selected from the group consisting of a II-VI semiconductor and a III-V semiconductor; depositing an overcoating shell on the core, wherein said core-overcoating shell comprises a second semiconductor material which is different from the first semiconductor material, the second semiconductor material being selected from the group consisting of MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, and HgTe, and wherein the core and the core-overcoating shell form a core/shell nanocrystal; and associating a polymer with the core/shell nanocrystal to produce a luminescent semiconductor nanocrystal composition. 2. The method of claim 1 , wherein the polymer is associated with the core/shell nanocrystal by mixing the core/shell nanocrystal with the polymer. 3. The method of claim 1 , wherein the polymer is covalently bound to the second semiconductor material. 4. The method of claim 1 , wherein the core/shell nanocrystal is incorporated into the interior of the polymer. 5. The method of claim 1 , wherein the polymer is associated with the core/shell nanocrystal by adsorption. 6. The method of claim 1 , wherein the first semiconductor material is selected from the group consisting of MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, and HgTe. 7. The method of claim 1 , wherein said first semiconductor material is selected from the group consisting of GaAs, InGaAs, InP, and InAs. 8. The method of claim 1 , wherein said second semiconductor material is selected from the group consisting of CdSe and ZnSe. 9. The method of claim 1 , wherein the first semiconductor material is CdSe and the second semiconductor material is ZnS. 10. The method of claim 1 , wherein the core has a diameter in a range of from about 20 Å to about 100 Å. 11. The method of claim 1 , wherein the core-overcoating shell comprises 1 to 10 monolayers. 12. The method of claim 1 , wherein the core-overcoating shell comprises ZnS and wherein the polymer encapsulates the core/shell nanocrystal. 13. The method of claim 1 , wherein the composition emits radiation within a narrow wavelength band of about 40 nm or less in width, measured at full width half maximum.
involving physiochemical end-point determination, e.g. wave-guides, FETS, gratings · CPC title
containing mercury · CPC title
Diverse hetero atoms in same or different rings [e.g., alkaloids, opiates, etc.] · CPC title
with zinc cadmium · CPC title
Chalcogenides · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.