Conductive composition and method for making conductive features on thin film PV cells

Patent metadata

Field	Value
Publication number	US-9530925-B2
Application number	US-201113877839-A
Country	US
Kind code	B2
Filing date	Oct 7, 2011
Priority date	Oct 19, 2010
Publication date	Dec 27, 2016
Grant date	Dec 27, 2016

Abstract

A method for forming a conductive feature. The method includes providing a substrate and a conductive composition. The conductive composition includes metal particles, a fluxing agent and a liquid monomer. The method further includes heating the composition to a temperature from about 200 to about 300° C. to fuse metal particles, crosslink the liquid monomer, and form a conductive feature.

First claim

I claim:

1. A method of forming a conductive feature on a substrate comprising:
providing a substrate;
providing a conductive composition comprising metal particles, a fluxing agent comprised of a mixture of a copper carboxylate and a first carboxylic acid, and a liquid monomer;
applying the conductive composition onto the substrate; and
heating the conductive composition on the substrate in a reducing atmosphere to a temperature that is no less than 200 degrees C. and no greater than 300 degrees C. for a sufficient period of time to permit fusion of the metal particles to form the conductive feature on the substrate and to permit a substantial portion of the copper carboxylate and the first carboxylic acid to chemically react, thereby forming a second carboxylic acid that is a stronger acid than the first carboxylic acid.

2. The method of claim 1 , wherein the metal particles comprise a copper powder and the heating step comprises heating the conductive composition on the substrate in a reducing atmosphere to a temperature that is no less than 200 degrees C. and no greater than 300 degrees C. for sufficient time to permit fusion of the metal particles to form a conductive feature on the substrate, the conductive feature having a resistivity of no more than ten times that of bulk copper after the heating step.

3. The method of claim 1 , wherein the substrate is a thin film photovoltaic cell having a transparent conductive oxide layer disposed thereon.

4. The method of claim 1 , wherein the conductive composition on the substrate is heated to a temperature of from about 210 to about 275° C.

5. The method of claim 1 , wherein the in-situ formed stronger carboxylic acid has a pKa of less than 3.8.

6. The method of claim 1 , wherein the reducing atmosphere comprises hydrogen diluted with nitrogen.

7. The method of claim 1 , wherein the first carboxylic acid is neodecanoic acid and the second carboxylic acid is formic acid.

8. The method of claim 1 , wherein the heating step heating the conductive composition on the substrate in a reducing atmosphere to a temperature that is no less than 200 degrees C. and no greater than 300 degrees C. for about 10 minutes.

9. The method of claim 1 , wherein the conductive composition further comprises up to about 5 wt % free radical initiator.

10. The method of claim 1 , wherein the metal particles include a combination of nanometer and micrometer-sized particles.

11. The method of claim 1 , wherein the liquid monomer is a self crosslinking monomer.

12. The method of claim 1 , wherein the liquid monomer is selected from the group consisting of trimethylolpropane trimethacrylate, trimethylolpropane triacrylate, di(trimethylolpropane) tetraacrylate, glycerol propoxylate triacrylate, pentaerythritol tetraacrylate, trimethylolpropane propoxylate triacrylate and combinations thereof.

13. The method of claim 1 , wherein the conductive feature is an electrode for the thin film photovoltaic cell.

14. The method of claim 1 , wherein the conductive feature is an electrode for a crystalline silicon photovoltaic film.

15. The method of claim 1 , wherein the substrate is a film stack comprising an antireflective coating, and a crystalline silicon p-n junction-based solar cell.

16. The method of claim 1 , wherein the substrate comprises a crystalline silicon solar cell and includes a patterned surface, and the applying the conductive composition includes direct screen printing of the conductive composition onto the patterned surface.

17. The method of claim 16 , wherein the patterned surface is formed by selective removal of portion of a dielectric film and deposition of a barrier layer in the removed positions.

18. The method of claim 1 , wherein the heating is to a temperature from about 220 to about 250° C.

Assignees

• Dong Chun Christine
• Air Prod & Chem

Inventors

• Dong Chun Christine

Classifications

• H01B1/22 Primary

  the conductive material comprising metals or alloys · CPC title

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• H01B1/02

  mainly consisting of metals or alloys · CPC title

• H01L31/1884 Primary

  Electricity · mapped topic

• H01L31/022425

  Electricity · mapped topic