Organic light emitting display apparatus and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9530854-B2
Application number	US-201414539048-A
Country	US
Kind code	B2
Filing date	Nov 12, 2014
Priority date	Feb 19, 2014
Publication date	Dec 27, 2016
Grant date	Dec 27, 2016

Abstract

An organic light emitting display includes a pixel circuit to supply current to an organic light emitting device. The pixel circuit includes a switching transistor and a driving transistor. The switching transistor includes a first insulating layer between a first gate electrode and an oxide semiconductor layer. The driving transistor includes a second gate electrode on an active layer. The first insulating layer is between the active layer and the second gate electrode.

First claim

What is claimed is:

1. An organic light emitting display, comprising:
a substrate;
an organic light emitting device on the substrate; and
a pixel circuit to supply current to the organic light emitting device,
wherein the pixel circuit includes a switching transistor, a driving transistor, and a capacitor on the substrate, the switching transistor including a first insulating layer between a first gate electrode and a first oxide semiconductor layer, the driving transistor including a second gate electrode on an active layer, the first insulating layer between the active layer and the second gate electrode, and the capacitor includes a first electrode on the substrate and a second electrode on the first electrode, wherein the first insulating layer is between the first electrode and the second electrode.

2. The display as claimed in claim 1 , wherein the first oxide semiconductor layer includes one or more of gallium, indium, zinc, hafnium, or tin, and oxygen.

3. The display as claimed in claim 1 , wherein the first gate electrode includes a first polycrystalline silicon layer doped with impurities.

4. The display as claimed in claim 3 , wherein the active layer includes a source region and a drain region on respective sides of a channel region, the source and drain regions doped with impurities.

5. The display as claimed in claim 4 , further comprising:
a second insulating layer on the first oxide semiconductor layer and the second gate electrode, wherein the switching transistor includes a first source electrode and a first drain electrode that connect to the first oxide semiconductor layer through the second insulating layer.

6. The display as claimed in claim 5 , wherein the driving transistor includes a second source electrode and a second drain electrode respectively connected to the source region and the drain region through the first insulating layer and the second insulating layer.

7. The display as claimed in claim 1 , wherein:
the first electrode includes a polycrystalline silicon layer doped with impurities, and the second electrode includes a second oxide semiconductor layer.

8. The display as claimed in claim 1 , wherein the capacitor includes:
a third electrode on the second electrode,
wherein the second insulating layer is between the second electrode and the third electrode.

9. The display as claimed in claim 1 , wherein the organic light emitting device includes an organic emission layer between an anode electrode and a cathode electrode.

Assignees

• Samsung Display Co Ltd

Inventors

• Choi Chaun-Gi

Classifications

• H10D30/6745

  Polycrystalline or microcrystalline silicon · CPC title

• H10D30/6731

  Top-gate only TFTs · CPC title

• H10K10/466

  Lateral bottom-gate IGFETs comprising only a single gate · CPC title

• H10K10/464

  Lateral top-gate IGFETs comprising only a single gate · CPC title

• H10D99/00

  Subject matter not provided for in other groups of this subclass · CPC title