Display device, electronic apparatus, and method of fabricating the display device

Patent metadata

Field	Value
Publication number	US-9530829-B2
Application number	US-201514854857-A
Country	US
Kind code	B2
Filing date	Sep 15, 2015
Priority date	Sep 29, 2004
Publication date	Dec 27, 2016
Grant date	Dec 27, 2016

Abstract

It is an object of the invention to provide a technique to manufacture a display device with high image quality and high reliability at low cost with high yield. The invention has spacers over a pixel electrode layer in a pixel region and over an insulating layer functioning as a partition which covers the periphery of the pixel electrode layer. When forming a light emitting material over a pixel electrode layer, a mask for selective formation is supported by the spacers, thereby preventing the mask from contacting the pixel electrode layer due to a twist and deflection thereof. Accordingly, such damage as a crack by the mask does not occur in the pixel electrode layer. Thus, the pixel electrode layer does not have a defect in shapes, thereby a display device which performs a high resolution display with high reliability can be manufactured.

First claim

What is claimed is:

1. An active matrix display device comprising:
a first substrate;
a first transistor over the first substrate;
a second transistor provided on the same surface as the first transistor;
a first insulating layer over the first transistor and the second transistor;
a pixel electrode over the first insulating layer, the pixel electrode being electrically connected to the first transistor;
a second insulating layer to cover an end portion of the pixel electrode;
a light emitting layer over the pixel electrode;
a second electrode over the light emitting layer;
a third insulating layer over the second electrode; and
a second substrate over the third insulating layer, the second substrate being fixed to the first substrate,
wherein the second electrode covers the second insulating layer,
wherein the second insulating layer comprises an insulating material,
wherein the second electrode is provided over a projecting portion,
wherein the projecting portion comprises the insulating material, and
wherein the projecting portion overlaps with the second transistor.

2. The active matrix display device according to claim 1 , wherein the light emitting layer comprises an organic material.

3. The active matrix display device according to claim 1 , wherein each of the first transistor and the second transistor is a switching element.

4. The active matrix display device according to claim 1 , wherein the second insulating layer comprises an organic resin.

5. The active matrix display device according to claim 1 , wherein the second substrate is provided with a color filter.

6. The active matrix display device according to claim 1 , wherein the light emitting layer is capable of emitting white light.

7. The active matrix display device according to claim 1 , wherein the first insulating layer comprises a material selected from silicon nitride, polyimide and acrylic.

8. The active matrix display device according to claim 1 , wherein the second insulating layer comprises polyimide.

9. The active matrix display device according to claim 1 , wherein the third insulating layer is in direct contact with the second substrate.

10. The active matrix display device according to claim 1 , wherein the third insulating layer is in direct contact with the second electrode.

11. The active matrix display device according to claim 1 , wherein the second insulating layer and the projecting portion are formed in different steps.

12. An active matrix display device comprising:
a first substrate;
a first transistor over the first substrate;
a second transistor provided on the same surface as the first transistor;
a first insulating layer over the first transistor and the second transistor;
a pixel electrode over the first insulating layer, the pixel electrode being electrically connected to the first transistor;
a second insulating layer to cover an end portion of the pixel electrode;
a light emitting layer over the pixel electrode;
a second electrode over the light emitting layer;
a third insulating layer over the second electrode; and
a second substrate over the third insulating layer, the second substrate being fixed to the first substrate,
wherein the second electrode covers the second insulating layer,
wherein the second insulating layer comprises an insulating material,
wherein the second electrode is provided over a projecting portion,
wherein the projecting portion comprises the insulating material, and
wherein the projecting portion overlaps with a channel formation region of the second transistor.

13. The active matrix display device according to claim 12 , wherein the light emitting layer comprises an organic material.

14. The active matrix display device according to claim 12 , wherein each of the first transistor and the second transistor is a switching element.

15. The active matrix display device according to claim 12 , wherein the second insulating layer comprises an organic resin.

16. The active matrix display device according to claim 12 , wherein the second substrate is provided with a color filter.

17. The active matrix display device according to claim 12 , wherein the light emitting layer is capable of emitting white light.

18. The active matrix display device according to claim 12 , wherein the first insulating layer comprises a material selected from silicon nitride, polyimide and acrylic.

19. The active matrix display device according to claim 12 , wherein the second insulating layer comprises polyimide.

20. The active matrix display device according to claim 12 , wherein the third insulating layer is in direct contact with the second substrate.

21. The active matrix display device according to claim 12 , wherein the third insulating layer is in direct contact with the second electrode.

22. The active matrix display device according to claim 12 , wherein the second insulating layer and the projecting portion are formed in different steps.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei

Classifications

• H10K59/38

  comprising colour filters or colour changing media [CCM] · CPC title

• H10K59/874

  including getter material or desiccant · CPC title

• H10K59/8723

  Vertical spacers, e.g. arranged between the sealing arrangement and the OLED · CPC title

• H10K59/123

  Connection of the pixel electrodes to the thin film transistors [TFT] · CPC title

• H10K59/122 Primary

  Pixel-defining structures or layers, e.g. banks · CPC title