Bonded body and power module substrate

Patent metadata

Field	Value
Publication number	US-9530717-B2
Application number	US-201414913648-A
Country	US
Kind code	B2
Filing date	Aug 18, 2014
Priority date	Aug 26, 2013
Publication date	Dec 27, 2016
Grant date	Dec 27, 2016

Abstract

The bonded body of the present invention includes: a ceramic member made of ceramics; and a Cu member which is made of Cu or a Cu alloy and bonded to the ceramic member through a Cu—P—Sn-based brazing filler material and a Ti material, wherein a Cu—Sn layer, which is positioned close to the ceramic member and in which Sn forms a solid solution with Cu, and an intermetallic compound layer which is positioned between the Cu member and the Cu—Sn layer and contains P and Ti, are formed at a bonded interface between the ceramic member and the Cu member.

First claim

The invention claimed is:

1. A bonded body comprising:
a ceramic member made of ceramics; and
a Cu member which is made of Cu or a Cu alloy and bonded to the ceramic member through a Cu—P—Sn-based brazing filler material and a Ti material,
wherein a Cu—Sn layer, which is positioned close to the ceramic member and in which Sn forms a solid solution with Cu, and an intermetallic compound layer which is positioned between the Cu member and the Cu—Sn layer and contains P and Ti, are formed at a bonded interface between the ceramic member and the Cu member.

2. The bonded body according to claim 1 ,
wherein the intermetallic compound layer is formed in a range of 0.1 μm to 100 μm from the interface between the ceramic member and the Cu—Sn layer.

3. A power module substrate comprising the bonded body according to claim 2 , wherein the substrate further comprises:
a ceramic substrate formed of the ceramic member; and
a circuit layer formed by bonding a Cu foil formed of the Cu member to a first surface of the ceramic substrate through the Cu—P—Sn-based brazing filler material and the Ti material, and
wherein the Cu—Sn layer, which is positioned close to the ceramic substrate and in which Sn forms a solid solution with Cu, and the intermetallic compound layer which is positioned between the circuit layer and the Cu—Sn layer and contains P and Ti, are formed at a bonded interface between the ceramic substrate and the circuit layer.

4. The power module substrate according to claim 3 ,
wherein a metal layer is formed on a second surface of the ceramic substrate.

5. The power module substrate according to claim 4 ,
wherein the metal layer is formed by bonding a Cu foil made of Cu or a Cu alloy to the second surface of the ceramic substrate through a Cu—P—Sn-based brazing filler material and a Ti material, and
wherein a Cu—Sn layer, which is positioned close to the ceramic substrate and in which Sn forms a solid solution with Cu, and an intermetallic compound layer which is positioned between the metal layer and the Cu—Sn layer and contains P and Ti, are formed at a bonded interface between the ceramic substrate and the metal layer.

6. The power module substrate according to claim 4 ,
wherein the metal layer is made of Al or an Al alloy.

7. A power module substrate comprising the bonded body according to claim 1 , wherein the substrate further comprises:
a ceramic substrate formed of the ceramic member; and
a circuit layer formed by bonding a Cu foil formed of the Cu member to a first surface of the ceramic substrate through the Cu—P—Sn-based brazing filler material and the Ti material, and
wherein the Cu—Sn layer, which is positioned close to the ceramic substrate and in which Sn forms a solid solution with Cu, and the intermetallic compound layer which is positioned between the circuit layer and the Cu—Sn layer and contains P and Ti, are formed at a bonded interface between the ceramic substrate and the circuit layer.

8. The power module substrate according to claim 7 ,
wherein a metal layer is formed on a second surface of the ceramic substrate.

9. The power module substrate according to claim 8 ,
wherein the metal layer is formed by bonding a Cu foil made of Cu or a Cu alloy to the second surface of the ceramic substrate through a Cu—P—Sn-based brazing filler material and a Ti material, and
wherein a Cu—Sn layer, which is positioned close to the ceramic substrate and in which Sn forms a solid solution with Cu, and an intermetallic compound layer which is positioned between the metal layer and the Cu—Sn layer and contains P and Ti, are formed at a bonded interface between the ceramic substrate and the metal layer.

10. The power module substrate according to claim 8 ,
wherein the metal layer is made of Al or an Al alloy.

Assignees

• Mitsubishi Materials Corp

Inventors

• Terasaki Nobuyuki
• Nagatomo Yoshiyuki

Classifications

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W70/692

  Ceramics or glasses · CPC title

• H10W70/66

  Conductive materials thereof · CPC title

• H10W70/65

  Shapes or dispositions of interconnections · CPC title

• H10W70/05

  of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04) · CPC title