Method and structure to suppress finFET heating

Patent metadata

Field	Value
Publication number	US-9530684-B2
Application number	US-201615172366-A
Country	US
Kind code	B2
Filing date	Jun 3, 2016
Priority date	Jul 8, 2014
Publication date	Dec 27, 2016
Grant date	Dec 27, 2016

Abstract

Embodiments of the present invention provide structures and methods for heat suppression in finFET devices. Fins are formed in a semiconductor substrate. A graphene layer is formed on a lower portion of the sidewalls of the fins. A shallow trench isolation region is disposed on the structure and covers the graphene layer, while an upper portion of the fins protrudes from the shallow trench isolation region. The graphene layer may also be deposited on a top surface of the base semiconductor substrate. The graphene serves to conduct heat away from the fins more effectively than other dielectric materials.

First claim

What is claimed is:

1. A semiconductor structure, comprising:
a semiconductor substrate;
a plurality of fins formed on the semiconductor substrate;
a graphene layer in contact with a lower portion of each fin of the plurality of fins; and
a shallow trench isolation layer disposed on the semiconductor substrate between each fin of the plurality of fins, and extending to a level above the graphene layer, wherein the graphene layer is covered by the shallow trench isolation layer, and wherein an upper portion of each fin of the plurality of fins protrudes from the shallow trench isolation layer.

2. The semiconductor structure of claim 1 , wherein the plurality of fins is comprised of silicon.

3. The semiconductor structure of claim 1 , wherein the graphene layer has a thickness ranging from about 1 nanometer to about 3 nanometers.

4. The semiconductor structure of claim 1 , further comprising a silicon nitride layer disposed on the graphene layer.

5. The semiconductor structure of claim 1 , wherein the shallow trench isolation layer is comprised of silicon oxide.

6. The semiconductor structure of claim 1 , wherein the upper portion of each fin has a height ranging from about 20 nanometers to about 30 nanometers.

7. A semiconductor structure, comprising:
a semiconductor substrate;
a plurality of fins formed on the semiconductor substrate;
a graphene layer disposed on, and in direct physical contact with a lower portion of sidewalls of each fin of the plurality of fins, and a top surface of the semiconductor substrate;
a silicon nitride layer disposed on the graphene layer; and
a shallow trench isolation layer disposed on the semiconductor substrate between each fin of the plurality of fins, and extending to a level above the graphene layer, wherein the graphene layer is covered by the shallow trench isolation layer, and wherein an upper portion of each fin of the plurality of fins protrudes from the shallow trench isolation layer.

8. The semiconductor structure of claim 7 , wherein the graphene layer has a thickness ranging from about 1 nanometer to about 3 nanometers.

9. The semiconductor structure of claim 7 , wherein the shallow trench isolation layer is comprised of silicon oxide.

10. The semiconductor structure of claim 7 , wherein the upper portion of each fin has a height ranging from about 20 nanometers to about 30 nanometers.

11. The semiconductor structure of claim 7 , wherein the semiconductor substrate and plurality of fins are comprised of silicon.

Assignees

• Globalfoundries Inc

Inventors

• Alptekin Emre
• Sardesai Viraj Yashawant
• Tran Cung Do
• Vega Reinaldo Ariel

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6905

  being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title

• H10P14/6902

  composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon · CPC title