Method for Manufacturing a Semiconductor Device by Hydrogen Treatment
US-2016372336-A1 · Dec 22, 2016 · US
Production method for a semiconductor device
US9530672B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9530672-B2 |
| Application number | US-201314372004-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 14, 2013 |
| Priority date | Mar 19, 2012 |
| Publication date | Dec 27, 2016 |
| Grant date | Dec 27, 2016 |
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Abstract
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A method for producing a semiconductor device includes providing a semiconductor substrate having a first conductivity type; implanting protons through a rear surface of the semiconductor substrate of the first conductivity type; and forming a first semiconductor region of the first conductivity type in the semiconductor substrate by performing an annealing process in an annealing furnace in a hydrogen atmosphere having a volume concentration of hydrogen that is equal to or greater than 0.5% and less than 4.65%, the first semiconductor region having a higher impurity concentration than that of the semiconductor substrate after the implantation step. The method reduces crystal defects in the generation of donors during proton implantation and improves the rate of change into a donor.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method for producing a semiconductor device, comprising: providing a semiconductor substrate having a first conductivity type; implanting protons through a rear surface of the semiconductor substrate of the first conductivity type; and introducing hydrogen to form a first semiconductor region of the first conductivity type in the semiconductor substrate by performing an annealing process in an annealing furnace in a hydrogen atmosphere having a v…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10P95/405Primary
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9530672B2 cover?
- A method for producing a semiconductor device includes providing a semiconductor substrate having a first conductivity type; implanting protons through a rear surface of the semiconductor substrate of the first conductivity type; and forming a first semiconductor region of the first conductivity type in the semiconductor substrate by performing an annealing process in an annealing furnace in a …
- Who is the assignee on this patent?
- Fuji Electric Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P95/405. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Dec 27 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).