Slurry composition for chemical mechanical polishing of Ge-based materials and devices

Patent metadata

Field	Value
Publication number	US-9530655-B2
Application number	US-201414480046-A
Country	US
Kind code	B2
Filing date	Sep 8, 2014
Priority date	Sep 8, 2014
Publication date	Dec 27, 2016
Grant date	Dec 27, 2016

Abstract

A CMP slurry composition which provides for a high Ge- or SiGe-to-dielectric material selectivity a low rate of Ge or SiGe recess formation includes an oxidant and a germanium removal rate enhancer including at least one of a methylpyridine compound and a methylpyridine derivative compound. In some examples, the slurry composition also includes an etching inhibitor. In some cases, the slurry composition may include an abrasive, a surfactant, an organic complexant, a chelating agent, an organic or inorganic acid, an organic or inorganic base, a corrosion inhibitor, or a buffer. The slurry composition may be distributed onto a surface of a polishing pad disposed on a platen that is configured to rotate. Additionally, a workpiece carrier configured to house a substrate may bring the substrate into contact with the rotating polishing pad and thereby polish the substrate utilizing the slurry composition.

First claim

What is claimed is:

1. A method, comprising: providing a substrate including a germanium-containing region and an oxide region, wherein the germanium-containing region and the oxide region share a common interface; rotating a chemical mechanical polishing (CMP) platen including a polishing pad disposed thereon; providing a slurry containing an oxidant including a first compound, a germanium removal rate enhancer including a second compound comprising at least one methyl group, and an abrasive onto a surface of the polishing pad during the rotating; and contacting the polishing pad having the slurry thereon to the common interface of the germanium-containing region and the oxide region.

2. The method of claim 1 , further comprising:
after contacting the rotating polishing pad to the common interface, polishing the common interface, wherein the polishing is configured to remove material from the germanium-containing region at a higher rate than from the oxide region, and wherein the common interface of the germanium-containing region and the oxide region is substantially flat after polishing.

3. The method of claim 1 , wherein the germanium removal rate enhancer includes at least one of 2-methylpyridine, 3-methylpyridine, 4-methylpyridine, 2,3-dimethylpyridine, 2,4-dimethylpyridine, 2,6-dimethylpyridine, and 3,5-dimethylpyridine.

4. The method of claim 3 , wherein the oxidant includes one or more of hydrogen peroxide, potassium peroxodisulfate, ammonium peroxodisulfate, sodium peroxodisulfate, potassium peroxymonosulfate, peracetic acid, and tert-butyl hydrogen peroxide.

5. The method of claim 1 , wherein the providing the slurry further includes providing at least one of an etching inhibitor, a surfactant, an organic complexant, a chelating agent, an organic or inorganic acid, an organic or inorganic base, a corrosion inhibitor, and a buffer.

6. A method, comprising:
providing a substrate including a germanium-containing region and a second region, wherein the germanium-containing region and the second region share a common interface;
rotating a chemical mechanical polishing (CMP) platen including a polishing pad disposed thereon;
providing a slurry containing a germanium removal rate enhancer onto a surface of the polishing pad during the rotating, the germanium removal rate enhancer including at least one of a methylpyridine compound and a methylpyridine derivative compound; and
contacting the polishing pad having the slurry thereon to the common interface of the germanium-containing region and the oxide region.

7. The method of claim 6 wherein the second region is an oxygen-containing region, the slurry further containing an oxidant having one or more oxygen atoms.

8. The method of claim 7 wherein comprising:
providing an abrasive including at least one of colloidal silica, fumed silica, aluminum oxide, silica shell based composite submicron particles, and ceria, to the slurry.

9. The method of claim 7 further comprising
providing at least one of a surfactant, an organic complexant, a chelating agent, an organic or inorganic acid, an organic or inorganic base, a corrosion inhibitor, and a buffer to the slurry.

10. The method of claim 7 wherein the slurry composition includes a slurry composition having a pH level in a range of between approximately 1 and 6.

11. The method of claim 7 wherein the oxidant includes one or more of hydrogen peroxide, potassium peroxodisulfate, ammonium peroxodisulfate, sodium peroxodisulfate, potassium peroxymonosulfate, peracetic acid, and tert-butyl hydrogen peroxide.

12. The method of claim 7 wherein the oxidant includes an oxidant concentration between approximately 10 ppm and 50,000 ppm.

13. The method of claim 6 wherein the germanium removal rate enhancer includes the methylpyridine compound including at least one of 2-methylpyridine, 3-methylpyridine, and 4-methylpyridine.

14. The method of claim 6 wherein, wherein the germanium removal rate enhancer includes the methylpyridine derivative compound including at least one of 2,3-dimethylpyridine, 2,4-dimethylpyridine, 2,6-dimethylpyridine, and 3,5-dimethylpyridine.

15. The method of claim 6 wherein the germanium removal rate enhancer includes a germanium removal rate enhancer concentration between approximately 100 ppm and 5,000 ppm.

16. The method of claim 6 further comprising:
providing an etching inhibitor to the slurry.

17. The method of claim 16 wherein the etching inhibitor includes 2-mercaptopyridine N-oxide.

18. The method of claim 16 wherein the etching inhibitor includes an etching inhibitor concentration of between approximately 100 ppm and 5,000 ppm.

19. A method for chemical mechanical polishing (CMP) a workpiece, comprising:
distributing a slurry having a slurry composition including an oxidant and a germanium removal rate enhancer, wherein the germanium removal rate enhancer includes at least one of a methylpyridine compound and a methylpyridine derivative compound; and
rotating a polishing pad disposed on a platen relative to a substrate, wherein the slurry is distributed onto a surface of the polishing pad; and
positioning the workpiece adjacent with the polishing pad.

20. The method of claim 19 , wherein the germanium removal rate enhancer includes the methylpyridine compound including at least one of 2-methylpyridine, 3-methylpyridine, and 4-methylpyridine.

Assignees

• Taiwan Semiconductor Mfg Co Ltd
• Uwiz Tech Co Ltd
• Taiwan Semiconductor Manufacting Company Ltd

Inventors

• Hsu Chia-Jung
• Ho Yun-Lung
• Chen Neng-Kuo
• Chang Song-Yuan
• Tsai Teng-Chun

Classifications

• H10P72/0422

  for wet etching · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• H10P14/3211

  Silicon, silicon germanium or germanium · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title